Single N-channel MOSFET ELM13402CA-S ■General description ■Features ELM13402CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=4A (Vgs=10V) Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 70mΩ (Vgs=4.5V) Rds(on) < 110mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Vds Vgs 30 ±12 V V Id 4.0 3.4 A 1 Idm 15 A 2 Pd 1.4 1.0 W 1 Tj, Tstg -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 70 100 63 90 125 80 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4-1 Single N-channel MOSFET ELM13402CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 1.0 1.4 V A 45 55 66 80 Vgs=4.5V, Id=3A Vgs=2.5V, Id=2A 55 83 70 110 Vds=5V, Id=4A Is=1A, Vgs=0V 8 0.8 Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Vgs=10V, Id=4A Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Gfs Vsd Ciss mΩ 1.0 S V 2.5 A 390.0 pF 54.5 41.0 3 pF pF Ω 4.34 nC 0.60 1.38 nC nC td(on) 3.3 ns tr Vgs=10V, Vds=15V td(off) RL=3.75Ω, Rgen=6Ω 1.0 21.7 ns ns 2.1 12.0 6.3 ns ns nC Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Ta=125°C 0.6 10 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 30 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg tf trr Qrr Vgs=4.5V, Vds=15V, Id=4A If=4A, dIf/dt=100A/μs If=4A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM13402CA-S ■Typical electrical and thermal characteristics 15 10 10V 3V Vds=5V 8 4.5V 9 Id(A) Id (A) 12 2.5V 6 3 6 4 125°C 2 Vgs=2V 0 25°C 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 3.5 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 150 1.8 Normalized On-Resistance 125 Rds(on) (m� ) 1 Vgs=2.5V 100 75 Vgs=4.5V 50 25 Vgs=10V 0 1.6 Vgs=4.5V Vgs=10V 1.4 1.2 Vgs=2.5V 1 0.8 0 2 4 6 8 10 0 25 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 Id=2A 100 1.0E-01 Is (A) Rds(on) (m� ) 150 125°C 50 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single N-channel MOSFET ELM13402CA-S 5 500 Capacitance (pF) 4 Vgs (Volts) 600 Vds=15V Id=4A 3 2 1 Ciss 400 300 200 Coss 100 0 0 1 2 3 4 0 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited 1ms 30 Tj(max)=150°C Ta=25°C DC 0.1 1 10 0 0.001 100 Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 25 5 10s 10 20 10 1s 0.1 15 15 10�s 100�s 0.1s 10ms 1.0 10 20 Power (W) Id (Amps) 10.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max)=150°C Ta=25°C 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000