elm13416ca

Single N-channel MOSFET
ELM13416CA-S
■General description
■Features
ELM13416CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V and internal ESD
protection is included.
•
•
•
•
•
•
Vds=20V
Id=6.5A (Vgs=4.5V)
Rds(on) < 22mΩ (Vgs=4.5V)
Rds(on) < 26mΩ (Vgs=2.5V)
Rds(on) < 34mΩ (Vgs=1.8V)
ESD protected
■Maximum absolute ratings
Parameter
Drain-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
20
V
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current
±8
6.5
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
Pd
Junction and storage temperature range
Tj, Tstg
A
5.2
30
Idm
Power dissipation
V
1.4
0.9
-55 to 150
A
3
W
2
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
70
Max.
90
Unit
°C/W
Note
1
100
63
125
80
°C/W
°C/W
1, 4
■Circuit
SOT-23(TOP VIEW)
3
1
2
D
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
5-1
Single N-channel MOSFET
ELM13416CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
20
Ta=55°C
Gate threshold voltage
Vgs(th) Vds=Vgs, Id=250μA
0.4
On state drain current
Id(on) Vgs=4.5V, Vds=5V
30
±10
μA
1.1
V
A
Vgs=2.5V, Id=5.5A
18
26
Vgs=1.8V, Id=5A
21
34
Vds=5V, Id=6.5A
Is=1A, Vgs=0V
50
0.62
Vgs=0V, Vds=10V, f=1MHz
1295
160
Vgs=0V, Vds=0V, f=1MHz
87
1.8
pF
kΩ
10.0
nC
4.2
nC
Qgd
td(on)
tr
Vgs=4.5V, Vds=10V
2.6
280.00
328.00
nC
ns
ns
td(off) RL=1.54Ω, Rgen=3Ω
3.76
ns
ns
ns
Rds(on)
Gfs
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Crss
Rg
Gate-source charge
Qgs
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
μA
22
30
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
0.7
1
5
16
22
Vgs=4.5V, Id=6.5A
Static drain-source on-resistance
V
Ta=125°C
Qg
Vgs=4.5V, Vds=10V, Id=6.5A
tf
trr
If=6.5A, dIf/dt=100A/μs
2.24
31
Qrr
If=6.5A, dIf/dt=100A/μs
6.8
NOTE :
1.00
2
1650
41
mΩ
S
V
A
pF
pF
nC
1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment
with Ta =25°C. The value in any given application depends on the user's specific board design.
2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance.
3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency
and duty cycles to keep initial Tj=25°C.
4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient.
5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max.
6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted
on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA
curve provides a single pulse rating.
5-2
Single N-channel MOSFET
AO3416
ELM13416CA-S
■Typical electrical and thermal characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
2.5V
25
20
20
4.5V
15
ID(A)
ID (A)
1.8V
3.1V
15
VGS=1.5V
10
10
�C
25�C
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note 5)
VDS (Volts)
(Note )
Fig 1: On-Region Characteristics (Note5
30
VGS=1.8V
20
VGS=2.5V
15
VGS=4.5V
Normalized On-Resistance
1.6
25
RDS(ON) (mΩ
Ω)
125�C
5
5
VGS=2.5V
ID=5.5A
1.4
VGS=1.8V
ID=5A
1.2
17
5
2
VGS=4.5V10
1
ID=6.5A
0.8
10
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note 5)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note 5)
1.0E+01
60
ID=6.5A
1.0E+00
50
40
1.0E-01
40
125�C
30
IS (A)
RDS(ON) (mΩ
Ω)
VDS=5V
1.0E-02
125�C
25�C
1.0E-03
20
1.0E-04
25�C
1.0E-05
10
0
0.0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note 5)
0.2
0.4
0.6
0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note 5)
5-3
1.0
Single N-channel MOSFET
AO3416
ELM13416CA-S
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1800
VDS=10V
ID=6.5A
1600
1400
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
1200
1000
800
600
400
1
Coss
200
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
12
0
10µs
RDS(ON)
limited
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
1ms
1.0
10ms
0.1
100ms
TJ(Max)=150�C
TA=25�C
0.1
VDS
1
(Volts)
10
1
0.00001
100
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note )6)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 6)
10
100
10
10s
DC
0.0
0.01
TJ(Max)=150�C
TA=25�C
1000
100µs
Power (W)
10.0
ID (Amps)
5
10000
100.0
Zθ JA Normalized Transient
Thermal Resistance
Crss
0
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125�C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6)
5-4
100
1000
Single N-channel MOSFET
AO3416
ELM13416CA-S
■Test circuit & waveform
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
R e s istiv e S w itch in g T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
Rg
90 %
+
VDC
Vdd
-
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
V ds -
DUT
Isd
V gs
Ig
Idt
V gs
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V ds
5-5
V dd