SHENZHENFREESCALE AON2408

AON2408
20V N-Channel MOSFET
General Description
The AON2408 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.
Features
VDS
20V
ID (at VGS=4.5V)
8A
RDS(ON) (at VGS =4.5V)
< 14.5mΩ
RDS(ON) (at VGS =2.5V)
< 19mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
1/5
Steady-State
A
2.8
W
1.8
RθJA
°C
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
32
PD
TA=70°C
±12
6
IDM
TA=25°C
A
Units
V
8
ID
TA=100°C
C
Maximum
20
Typ
37
66
Max
45
80
Units
°C/W
°C/W
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AON2408
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
32
TJ=55°C
5
±100
nA
1.2
V
11.6
14.5
16.3
20.5
VGS=2.5V, ID=4A
15
19
mΩ
1
V
3.5
A
Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=8A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
0.83
VGS=4.5V, ID=8A
Output Capacitance
Units
V
1
Zero Gate Voltage Drain Current
Coss
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
782
pF
VGS=0V, VDS=10V, f=1MHz
158
pF
98
pF
VGS=0V, VDS=0V, f=1MHz
2.4
Ω
7
nC
1
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=4.5V, VDS=10V, ID=8A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
2.4
nC
tD(on)
Turn-On DelayTime
3
ns
4.5
ns
28
ns
6
ns
ns
nC
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
11
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
2.7
VGS=4.5V, VDS=10V, RL=1.25Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/5
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AON2408
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
2.5V
4.5V
VDS=5V
3.5V
15
1.8V
ID(A)
ID (A)
30
20
10
125°C
5
10
25°C
VGS=1.5V
0
0
0
1
2
3
4
0
5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
Normalized On-Resistance
1.6
40
RDS(ON) (mΩ
Ω)
0.5
VGS=1.8V
30
20
VGS=2.5V
10
VGS=4.5V
1.4
VGS=2.5V
ID=4A
VGS=4.5V
ID=8A
1.2
VGS=1.8V
ID=2A
1
0.8
0
0
0
4
8
12
16
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
50
ID=8A
1.0E+01
RDS(ON) (mΩ
Ω)
IS (A)
40
30
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
20
25°C
1.0E-03
10
25°C
0
1.0E-05
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
1.0E-04
2
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2408
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
VDS=10V
ID=8A
1000
4
Capacitance (pF)
VGS (Volts)
Ciss
3
2
800
600
400
Coss
1
0
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
10µs
100µs
1000
Power (W)
10µs
RDS(ON)
limited
10.0
ID (Amps)
Crss
200
1ms
1.0
10ms
TJ(Max)=150°C
TC=25°C
0.1
100
DC
10
0.0
0.01
0.1
1
VDS (Volts)
10
1
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=80°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note H)
4/5
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AON2408
20V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D io d e R eco very T est C ircu it & W a vefo rm s
Q rr = -
V ds +
Idt
DUT
V gs
V ds Isd
V gs
Ig
5/5
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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