Single N-channel MOSFET ELM13424CA-S ■General description ■Features ELM13424CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=30V Id=3.8A (Vgs=10V) Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 65mΩ (Vgs=4.5V) Rds(on) < 85mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 30 V Symbol Vds Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Vgs ±12 V Id 3.8 3.1 A Idm 15 A 3 Pd 1.4 0.9 W 2 Tj, Tstg -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 70 Max. 90 Unit °C/W Note 1 100 63 125 80 °C/W °C/W 1, 4 ■Circuit D SOT-23(TOP VIEW) 3 1 2 Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 5-1 Single N-channel MOSFET ELM13424CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V 30 Ta=55°C Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 0.5 On state drain current Id(on) Vgs=10V, Vds=5V 15 Rds(on) Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Gfs Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (Vgs=10V) Crss Rg Total gate charge (Vgs=4.5V) nA 1.5 V A Vgs=4.5V, Id=3.5A 47 65 mΩ Vgs=2.5V, Id=1A 59 85 mΩ Vds=5V, Id=3.8A Is=1A, Vgs=0V 14 0.75 1.00 1.5 S V A Vgs=0V, Vds=15V, f=1MHz 185 25 235 35 285 45 pF pF Vgs=0V, Vds=0V, f=1MHz 10 2.1 18 4.3 25 6.5 pF Ω 10.00 12.00 nC Vgs=10V, Vds=15V, Id=3.8A Qgs Qgd td(on) Turn-off delay time Turn-off fall time td(off) RL=3.95Ω, Rgen=3Ω tf trr Qrr ±100 mΩ Ta=125°C Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Body diode reverse recovery time Body diode reverse recovery charge μA 55 84 Qg tr 1.0 1 5 43 70 Vgs=10V, Id=3.8A Static drain-source on-resistance V Vgs=10V, Vds=15V If=3.8A, dIf/dt=100A/μs If=3.8A, dIf/dt=100A/μs 4.70 0.95 1.60 3.5 nC nC ns 1.5 ns 17.5 2.5 ns ns 8.5 2.6 11.0 3.5 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5-2 Single N-channel MOSFET AO3424 ELM13424CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V 3V 12 2.5V 8 4.5V 9 6 ID(A) ID (A) VDS=5V 6 VGS=2.0V 125�C 4 25�C 2 3 0 0 0 1 2 3 4 0 5 80 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 VGS=2.5V 70 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note 5) VDS (Volts) Fig 1: On-Region Characteristics (Note 5) 60 VGS=4.5V 50 40 VGS=10V VGS=4.5V ID=3.5A 1.6 1.4 VGS=10V 17 ID=3.8A 1.2 VGS=2.5V ID=1A 1 5 2 10 0.8 30 0 2 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 5) 120 4 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note )5) 1.0E+02 ID=3.8A 1.0E+01 100 40 125�C 80 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 60 1.0E-01 125�C 1.0E-02 1.0E-03 40 25�C 25�C 1.0E-04 1.0E-05 20 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note 5) 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note 5) 5-3 1.2 Single N-channel MOSFET AO3424 ELM13424CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=15V ID=3.8A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 250 Ciss 200 150 100 2 Coss 50 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25�C 1000 RDS(ON) limited 10µs 0µs 100µs 1.0 0.1 Power (W) ID (Amps) 10.0 1ms 10ms TJ(Max)=150�C TA=25�C 10 10s DC 0.0 0.01 0.1 VDS 1 (Volts) 10 1 0.00001 100 Zθ JA Normalized Transient Thermal Resistance 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 6) Figure 9: Maximum Forward Biased Safe Operating Area (Note 6) 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125�C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6) 5-4 100 1000 Single N-channel MOSFET AO3424 ELM13424CA-S Gate Charge Test Circuit & Waveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge R es e s istiv e S w itch ing in g T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs Rg 90 % + VDC Vdd - 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + V ds - DUT Isd V gs Ig Idt V gs L Isd + VD C - IF t rr dI/dt I RM V dd V ds 5-5 V dd