Single N-channel MOSFET ELM13420CA-S ■General description ■Features ELM13420CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V. • • • • • • Vds=20V Id=6.0A (Vgs=10V) Rds(on) < 24mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=4.5V) Rds(on) < 42mΩ (Vgs=2.5V) Rds(on) < 55mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 20 V Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current ±12 6 Id Ta=70°C Pulsed drain current Tc=25°C Pd Tc=70°C Junction and storage temperature range Tj, Tstg A 5 Idm Power dissipation V 30 1.4 0.9 -55 to 150 A 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 70 100 Max. 90 125 Unit °C/W °C/W 63 80 °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note 1 1, 4 Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 5-1 Single N-channel MOSFET ELM13420CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V μA ±100 nA 0.75 1.10 V 16 24 Rds(on) Vgs=4.5V, Id=5A 23 18 35 27 Vgs=2.5V, Id=4A 23 42 Vgs=1.8V, Id=2A 31 55 Vds=5V, Id=6A Is=1A, Vgs=0V 25 0.7 Idss Vds=20V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Gfs Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (Vgs=10V) Crss Rg Total gate charge (Vgs=4.5V) Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Vgs=10V, Id=6A Static drain-source on-resistance V 1 5 Zero gate voltage drain current Gate threshold voltage 20 0.40 Ta=125°C mΩ 1.0 2 S V A Vgs=0V, Vds=10V, f=1MHz 420 65 525 95 630 125 pF pF Vgs=0V, Vds=0V, f=1MHz 45 0.8 75 1.7 105 2.6 pF Ω Qg Vgs=10V, Vds=10V, Id=6A 12.5 nC 6.0 nC 1.0 2.0 3.0 nC nC ns Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Qgs Qgd td(on) Vgs=10V, Vds=10V 7.5 ns Turn-off delay time Turn-off fall time td(off) RL=1.7Ω, Rgen=3Ω tf 20.0 6.0 ns ns 14 6 ns nC Body diode reverse recovery time Body diode reverse recovery charge tr trr Qrr If=6A, dIf/dt=100A/μs If=6A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using≤10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5-2 Single N-channel MOSFET AO3420 ELM13420CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 15 2.5V 4.5V ID(A) ID (A) 30 VDS=5V 20 10 1.8V 125�C 5 10 25�C VGS=3.5V 0 0 0 1 2 3 4 0 5 60 Normalized On-Resistance 50 45 RDS(ON) (mΩ Ω) 1 1.5 2 2.5 1.8 55 VGS=1.8V 40 35 VGS=2.5V 30 25 VGS=4.5V 20 15 VGS=10V 10 0 5 VGS=4.5V ID=5A VGS=2.5V ID=4A 1.6 1.4 17 VGS=1.8V 5 ID=2A 1.2 2 10 =10V VGS ID=6A 1 0.8 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 5) 0 45 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note 5) 1.0E+02 ID=6A 40 1.0E+01 40 1.0E+00 35 30 125�C IS (A) RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note 5) VDS (Volts) Fig 1: On-Region Characteristics (Note 5) 25 125�C 1.0E-01 1.0E-02 25�C 1.0E-03 20 1.0E-04 25�C 1.0E-05 15 0 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note 5) 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note 5) 5-3 1.2 AO3420 Single N-channel MOSFET ELM13420CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 Capacitance (pF) 8 VGS (Volts) 1000 VDS=10V ID=6A 6 4 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 15 Crss 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25�C RDS(ON) limited 1000 10µs Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms 0.1 10 10s TJ(Max)=150�C TA=25�C DC 1 0.0 0.01 0.1 VDS 1 (Volts) 10 0.00001 100 Zθ JA Normalized Transient Thermal Resistance 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 6) Figure 9: Maximum Forward Biased Safe Operating Area (Note 6) 10 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125�C/W 0.1 PD PD 0.01 Ton Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6) 5-4 100 1000 Single N-channel MOSFET AO3420 ELM13420CA-S ■Test circuit and waveform Gate Charge Test Circuit & Waveform Vgs Qg 10V + VDC + Vds - VDC DUT Qgs Qgd - Vgs Ig Charge R e s istiv e S w itch in g T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs Rg 90 % + VDC Vdd - 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D io d e R eco very T est C ircu it & W a vefo rm s Q rr = - V ds + DUT V ds - Isd V gs Ig Idt V gs L Isd + VD C - IF t rr dI/dt I RM V dd V ds 5-5 V dd