AO3420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product AO3420 is Pb-free (meets ROHS & Sony 259 specifications). AO3420L is a Green Product ordering option. AO3420 and AO3420L are electrically identical. VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) RDS(ON) < 42mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) TO-236 (SOT-23) Top View D G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V 25 1.4 W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 6 TA=25°C Power Dissipation A Maximum 20 RθJA RθJL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W AO3420 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage ID(ON) On state drain current Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 VDS=0V, VGS=±12V VDS=VGS ID=250uA VGS=4.5V, VDS=5V 0.5 VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=2A Forward Transconductance VDS=5V, ID=3.8A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Units V µA 100 nA 0.7 1 V 19 29 24 35 22 35 45 27 42 55 25 TJ=125°C gFS Max 1 5 TJ=55°C VGS=10V, ID=6A RDS(ON) Typ A 24 0.75 mΩ S 1 V 2 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=10V, f=1MHz 630 164 pF pF Rg VGS=0V, VDS=0V, f=1MHz 137 1.5 pF Ω VGS=4.5V, VDS=10V, ID=6A 8.8 1 nC nC 3.7 5.5 14 29 10.2 nC ns ns ns ns 15.2 ns nC Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=5V, VDS=10V, RL=1.7Ω, RGEN=6Ω IF=6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 6.3 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V VGS=5V 3V 4V VGS =2V VDS=5V 15 ID(A) ID(A) 20 10 VGS =1.5V 10 125°C 125°C 5 25°C 25°C 0 0 1 2 3 4 0 5 0.0 0.5 VDS(Volts) 50 Normalize ON-Resistance RDS(ON) (mΩ) 40 VGS=2.5V 30 VGS=4.5V 20 VGS=10V 10 4 6 8 10 VGS=1.8V ID=2A ID=1A 1.0 13 25 50 75 100 125 150 175 1E+00 125°C 1E-01 IS(A) RDS(ON)(mΩ) ID=6A Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 25°C 1E-02 1E-03 30 20 VGS=10V 3.6 ID=3.8A 1.2 0 125°C 125°C 1.7 VGS=4.5V ID=5A 0.8 ID=6A 70 40 2.5 1E+01 ID=3.8A 60 VGS=2.5V ID=3.5A ID=4A 1.4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 2.0 270 1.6 VGS=1.8V 2 1.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristi cs 0 1.0 1E-04 25°C 25°C 1E-05 10 0 2 4 6 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AO3420 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=10V ID=6A 1200 Capacitance (pF) VGS(Volts) 4 VDS=15V ID=3.8A 3 2 1 1000 Ciss 800 600 Coss 400 200 Coss Crss Crss 0 0 0 2 4 6 8 0 10 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 270 20 TJ(Max)=150°C, TA=25°C 10µs 100µs 1 1ms DC 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 1.7 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 3.6 10 5 10ms 100m 1s 0.1 TJ(Max)=150°C TA=25°C 15 RDS(ON) 10 limited Power (W) ID (Amps) 100 100 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000