AO3424 30V N-Channel MOSFET General Description The AO3424 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS 30V ID (at VGS=10V) 3.8A RDS(ON) (at VGS=10V) < 55mΩ RDS(ON) (at VGS =4.5V) < 65mΩ RDS(ON) (at VGS =2.5V) < 85mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V 15 PD TA=70°C ±12 3.1 IDM TA=25°C B Units V 3.8 ID TA=70°C C Maximum 30 RθJA RθJL -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3424 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 Units V 1 Zero Gate Voltage Drain Current TJ=55°C 5 µA ±100 nA 1 1.5 V 43 55 70 84 VGS=4.5V, ID=3.5A 47 65 mΩ VGS=2.5V, ID=1A 59 85 mΩ 14 1 V 1.5 A VGS=10V, ID=3.8A Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ TJ=125°C gFS Forward Transconductance VDS=5V, ID=3.8A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance A 0.75 mΩ S 185 235 285 pF 25 35 45 pF 10 18 25 pF 2.1 4.3 6.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 12 Qg(4.5V) Total Gate Charge 4.7 nC 0.95 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.8A nC Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time 1.5 ns tD(off) Turn-Off DelayTime 17.5 ns tf Turn-Off Fall Time 2.5 ns VGS=10V, VDS=15V, RL=3.95Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=3.8A, dI/dt=100A/µs 8.5 11 Qrr Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs 2.6 3.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/5 www.freescale.net.cn AO3424 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V VDS=5V 3V 2.5V 12 8 4.5V 9 ID(A) ID (A) 6 125°C 4 6 VGS=2.0V 3 2 0 0 0 1 2 3 4 25°C 0 5 80 1 1.5 2 2.5 3 Normalized On-Resistance 1.8 VGS=2.5V 70 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 60 VGS=4.5V 50 40 VGS=10V VGS=4.5V ID=3.5A 1.6 1.4 VGS=10V 17 ID=3.8A 1.2 VGS=2.5V ID=1A 1 5 2 10 0.8 30 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=3.8A 1.0E+01 100 40 125°C 80 60 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 40 25°C 1.0E-04 1.0E-05 20 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 25°C 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO3424 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=15V ID=3.8A 350 8 Capacitance (pF) VGS (Volts) 300 6 4 250 Ciss 200 150 100 Coss 2 50 0 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 1000 RDS(ON) limited 10µs 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C Power (W) ID (Amps) 10.0 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO3424 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig 5/5 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.freescale.net.cn