Single N-channel MOSFET ELM13434CA-S ■General description ■Features The ELM13434CA-S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. • • • • • Vds=30V Id=4.2A (Vgs=10V) Rds(on) < 52mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ESD protected ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit 10sec Steady-state Unit Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 V Continuous drain current Ta=25°C Ta=70°C 4.2 3.3 Id Pulsed drain current 3.5 2.8 Idm Tc=25°C Tc=70°C Power dissipation 30 1.40 0.90 Pd Junction and storage temperature range Tj, Tstg 1.00 0.64 -55 to 150 Note A 1, 6 A 2 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 70 Max. 90 Unit °C/W 100 63 125 80 °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4-1 Single N-channel MOSFET ELM13434CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=30V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±16V 30 1 Ta=55°C 1.32 43 1.80 52 V 58 74 Vgs=4.5V, Id=2A 59 75 mΩ Vds=5V, Id=4.2A Is=1A, Vgs=0V 8.5 0.77 1.00 S V 1.8 A 340 pF pF Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Qg Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=10V, Id=4.2A Ta=125°C 1.00 Is Input capacitance Output capacitance μA μA Vgs(th) Vds=Vgs, Id=250μA Gfs Vsd 5 10 Gate threshold voltage Forward transconductance Diode forward voltage V Vgs=0V, Vds=15V, f=1MHz 269 65 Vgs=0V, Vds=0V, f=1MHz 41 1.0 Vgs=10V, Vds=15V, Id=4.2A 5.70 3.00 1.5 7.20 1.37 0.65 mΩ pF Ω nC nC nC nC 2.6 3.8 ns Vgs=10V, Vds=15V 5.5 8.0 ns td(off) RL=3.6Ω, Rgen=3Ω tf 15.2 3.7 23.0 5.5 ns ns 15.5 7.1 21.0 ns nC tr trr Qrr If=4.2A, dIf/dt=100A/μs If=4.2A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using<300μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 6. The current rating is based on the t≤10s thermal resistance rating. 4-2 Single N-channel MOSFET AO3434 ELM13434CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 4.5V 15 4V 9 3.5V 10 VDS=5V 12 6V ID(A) ID (A) 25 15 8V 10V 6 125�C 3 5 25� VGS=3V 0 0 1 2 0 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics 3 4 5 6 1.8 Normalized On-Resistance VGS=4.5V 70 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics 80 60 50 40 VGS=10V 30 VGS=10V Id=4.2A 1.6 1.4 1.2 VGS=4.5V Id=3.5A 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 102 ID=4.2A 90 78 1.0E+00 125� 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 1 66 125� 1.0E-02 25�C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 54 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS 25� OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, C 42 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 30 2 4 6 8 1.0E-05 10 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 4-3 1.2 Single N-channel MOSFET AO3434 ELM13434CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=4.2A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 2 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 30 10µs RDS(ON) limited 25 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150�C TA=25�C 20 15 10 0.1s DC TJ(Max)=150�C TA=25�C Power (W) 10.0 ID (Amps) Crss 0 6 100.0 5 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 Zθ JA Normalized Transient Thermal Resistance Coss 100 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125�C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS PD NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 1 10 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 4-4 100 1000