AO3434 30V N-Channel MOSFET General Description The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Features VDS (V) = 30V ID = 4.2A (VGS = 10V) RDS(ON) < 52mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) ESD protected D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol 10 sec VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A,F Pulsed Drain Current TA=70°C ID B PD TA=70°C TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Units V V 3.5 3.3 2.8 A 30 Junction and Storage Temperature Range 1/4 ±20 4.2 IDM TA=25°C Power Dissipation Maximum Steady-State 30 RθJA RθJL 1.4 1.0 0.9 0.64 -55 to 150 Typ 70 100 63 W °C Max 90 125 80 Units °C/W °C/W °C/W www.freescale.net.cn AO3434 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±16V Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=4.2A 10 uA 1.8 V 43 52 58 74 75 A Static Drain-Source On-Resistance VGS=4.5V, ID=2A 59 gFS Forward Transconductance VDS=5V, ID=4.2A 8.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 269 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=10V, VDS=15V, ID=4.2A µA 1.32 RDS(ON) Coss Units V VDS=30V, VGS=0V VGS(th) Crss Max 30 IGSS ID(ON) Typ mΩ mΩ S 1 V 1.8 A 340 pF 65 pF 41 pF 1 1.5 Ω 5.7 7.2 nC 3 nC 1.37 nC Qgs Gate Source Charge Qgd Gate Drain Charge 0.65 tD(on) Turn-On DelayTime 2.6 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr nC 3.8 ns VGS=10V, VDS=15V, RL=3.6Ω, RGEN=3Ω 5.5 8 ns 15.2 23 ns 3.7 5.5 ns IF=4.2A, dI/dt=100A/µs 15.5 21 Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs 7.1 ns nC Turn-Off Fall Time 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤10s thermal resistance rating. Rev3:Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/4 www.freescale.net.cn AO3434 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 8V 10V VDS=5V 12 6V 20 4.5V 15 4V 9 ID(A) ID (A) 25 6 3.5V 10 125°C 3 5 25°C VGS=3V 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics 80 1.8 Normalized On-Resistance VGS=4.5V 70 RDS(ON) (mΩ ) 2 60 50 40 VGS=10V 30 VGS=10V Id=4.2A 1.6 1.4 VGS=4.5V Id=3.5A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 102 1.0E+01 ID=4.2A 1.0E+00 125°C 78 1.0E-01 IS (A) RDS(ON) (mΩ ) 90 66 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 54 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS25°C OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 42 AND RELIABILITY WITHOUT NOTICE. FUNCTIONS 1.0E-05 30 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO3434 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=4.2A 400 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 300 200 Coss 100 0 1 2 3 4 5 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 25 100µ 1.0 1m 10ms 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 20 15 10 5 10s 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 0.1s DC 1 VDS (Volts) Power (W) ID (Amps) 5 30 10.0 Zθ JA Normalized Transient Thermal Resistance Crss 0 0 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS NOT ASSUME ANY LIABILITY ARISING D 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/4 www.freescale.net.cn