AO3434 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO3434 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) ESD Protected D TO-236 (SOT-23) Top View G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol 10 sec VDS Gate-Source Voltage VGS Continuous Drain Current A,F Pulsed Drain Current TA=25°C ID IDM TA=70°C B TA=25°C Power Dissipation Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. ±20 Units V V 4.2 3.5 3.3 2.8 A 30 PD TA=70°C Maximum Steady-State 30 RθJA RθJL 1.4 1.0 0.9 0.64 -55 to 150 Typ 70 100 63 Max 90 125 80 W °C Units °C/W °C/W °C/W www.aosmd.com AO3434 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 Gate-Body leakage current VDS=0V, VGS= ±16V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 10 uA 1.8 V 43 52 58 74 VGS=4.5V, ID=2A 59 75 VDS=5V, ID=4.2A 8.5 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 1.32 VGS=10V, ID=4.2A Crss Units V VDS=30V, VGS=0V VGS(th) Coss Max 30 IGSS IS Typ A 0.77 269 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=4.2A mΩ mΩ S 1 V 1.8 A 340 pF 65 pF 41 pF 1 1.5 Ω 5.7 7.2 nC 3 nC 1.37 nC Qgs Gate Source Charge Qgd Gate Drain Charge 0.65 tD(on) Turn-On DelayTime 2.6 tr Turn-On Rise Time tD(off) Turn-Off DelayTime nC 3.8 ns VGS=10V, VDS=15V, RL=3.6Ω, RGEN=3Ω 5.5 8 ns 15.2 23 ns tf Turn-Off Fall Time 3.7 5.5 ns trr Body Diode Reverse Recovery Time IF=4.2A, dI/dt=100A/µs 15.5 21 Qrr Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs 7.1 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤10s thermal resistance rating. Rev0: Mar. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 8V 10V 20 4.5V 15 4V 9 6 3.5V 10 VDS=5V 12 6V ID(A) ID (A) 25 125°C 3 5 25°C VGS=3V 0 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics 4 5 6 1.8 Normalized On-Resistance VGS=4.5V 70 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 80 60 50 40 VGS=10V 30 VGS=10V Id=4.2A 1.6 1.4 VGS=4.5V Id=3.5A 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 102 1.0E+01 ID=4.2A 90 1.0E+00 125°C 78 1.0E-01 IS (A) RDS(ON) (mΩ) 2 66 125°C 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 54 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS25°C OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 42 AND RELIABILITY WITHOUT NOTICE. FUNCTIONS 1.0E-05 30 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=4.2A 400 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 300 200 Coss 2 100 0 0 0 1 2 3 4 5 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 25 100µ 1.0 1m 10ms 0.1 TJ(Max)=150°C TA=25°C 0.0 0.01 0.1 0.1s DC 30 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W TJ(Max)=150°C TA=25°C 20 15 10 5 10s 1 VDS (Volts) Power (W) ID (Amps) 5 30 10.0 ZθJA Normalized Transient Thermal Resistance Crss 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS NOT ASSUME ANY LIABILITY ARISIG D 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com