AO3434 30V N-Channel MOSFET General Description Product Summary The AO3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. VDS (V) = 30V ID = 4.2A RDS(ON) < 52mΩ RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) ESD protected SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol 10 sec VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current A,F Pulsed Drain Current TA=70°C ID B Power Dissipation 4.2 3.5 3.3 2.8 Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Rev.4. 0: August 2013 A 30 PD TA=70°C Units V V ±20 IDM TA=25°C Maximum Steady-State 30 RθJA RθJL 1.4 1.0 0.9 0.64 -55 to 150 Typ 70 100 63 www.aosmd.com Max 90 125 80 W °C Units °C/W °C/W °C/W Page 1 of 4 AO3434 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C 1 10 uA 1.32 1.8 V 43 52 58 74 75 mΩ 1 V 1.8 A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2A 59 gFS Forward Transconductance VDS=5V, ID=4.2A 8.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 269 VGS=0V, VDS=15V, f=1MHz µA 5 VDS=0V, VGS= ±16V VDS=VGS ID=250µA mΩ S 340 65 pF pF 41 VGS=0V, VDS=0V, f=1MHz Units V VDS=30V, VGS=0V VGS=10V, ID=4.2A Coss Max pF Ω 1 1.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.7 7.2 Qg(4.5V) Total Gate Charge 3 nC 1.37 nC 0.65 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=4.2A nC 2.6 3.8 ns 5.5 8 ns 15.2 23 ns 3.7 5.5 ns 15.5 21 ns nC VGS=10V, VDS=15V, RL=3.6Ω, RGEN=3Ω IF=4.2A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs 7.1 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t≤10s thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4. 0: August 2013 www.aosmd.com Page 2 of 4 AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 8V 10V 25 VDS=5V 12 6V 20 4.5V 15 4V ID(A) ID (A) 9 6 3.5V 10 125°C 3 5 25° VGS=3V 0 0 0 1 2 3 4 5 0 VDS (Volts) Fig 1: On-Region Characteristics 3 4 5 6 1.8 Normalized On-Resistance VGS=4.5V 70 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics 80 60 50 40 VGS=10V 30 VGS=10V Id=4.2A 1.6 1.4 1.2 VGS=4.5V Id=3.5A 1 0.8 0 5 10 15 0 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 102 ID=4.2A 90 1.0E+00 78 125° 1.0E-01 IS (A) RDS(ON) (mΩ Ω) 1 66 125° 1.0E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 54 1.0E-03 AOS DOES NOT ASSUME ANY LIABILITY ARISING COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. OUT OF SUCH APPLICATIONS 25°C OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 42 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 30 2 4 6 8 10 1.0E-05 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.4. 0: August 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 4 AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500 10 VDS=15V ID=4.2A 400 Ciss Capacitance (pF) VGS (Volts) 8 6 4 300 200 Coss 2 100 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 30 10µs RDS(ON) limited 25 100µs 1.0 1ms 10ms 0.1 TJ(Max)=150°C TA=25°C 20 15 10 0.1s DC TJ(Max)=150°C TA=25°C Power (W) 10.0 ID (Amps) Crss 0 0 5 10s 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS PD NOT ASSUME ANY LIABILITY ARISING 0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.01 0.00001 Rev.4. 0: August 2013 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.aosmd.com 100 1000 Page 4 of 4