AO3434

AO3434
30V N-Channel MOSFET
General Description
Product Summary
The AO3434 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. It is ESD protected.
VDS (V) = 30V
ID = 4.2A
RDS(ON) < 52mΩ
RDS(ON) < 75mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
ESD protected
SOT23
Top View
D
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol 10 sec
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A,F
Pulsed Drain Current
TA=70°C
ID
B
Power Dissipation
4.2
3.5
3.3
2.8
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Rev.4. 0: August 2013
A
30
PD
TA=70°C
Units
V
V
±20
IDM
TA=25°C
Maximum
Steady-State
30
RθJA
RθJL
1.4
1.0
0.9
0.64
-55 to 150
Typ
70
100
63
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Max
90
125
80
W
°C
Units
°C/W
°C/W
°C/W
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AO3434
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
30
1
TJ=55°C
1
10
uA
1.32
1.8
V
43
52
58
74
75
mΩ
1
V
1.8
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=2A
59
gFS
Forward Transconductance
VDS=5V, ID=4.2A
8.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.77
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
269
VGS=0V, VDS=15V, f=1MHz
µA
5
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
mΩ
S
340
65
pF
pF
41
VGS=0V, VDS=0V, f=1MHz
Units
V
VDS=30V, VGS=0V
VGS=10V, ID=4.2A
Coss
Max
pF
Ω
1
1.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
7.2
Qg(4.5V) Total Gate Charge
3
nC
1.37
nC
0.65
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=4.2A
nC
2.6
3.8
ns
5.5
8
ns
15.2
23
ns
3.7
5.5
ns
15.5
21
ns
nC
VGS=10V, VDS=15V, RL=3.6Ω,
RGEN=3Ω
IF=4.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
7.1
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4. 0: August 2013
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Page 2 of 4
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
15
8V
10V
25
VDS=5V
12
6V
20
4.5V
15
4V
ID(A)
ID (A)
9
6
3.5V
10
125°C
3
5
25°
VGS=3V
0
0
0
1
2
3
4
5
0
VDS (Volts)
Fig 1: On-Region Characteristics
3
4
5
6
1.8
Normalized On-Resistance
VGS=4.5V
70
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics
80
60
50
40
VGS=10V
30
VGS=10V
Id=4.2A
1.6
1.4
1.2
VGS=4.5V
Id=3.5A
1
0.8
0
5
10
15
0
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
102
ID=4.2A
90
1.0E+00
78
125°
1.0E-01
IS (A)
RDS(ON) (mΩ
Ω)
1
66
125°
1.0E-02
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
54
1.0E-03 AOS DOES NOT ASSUME ANY LIABILITY ARISING
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
OUT OF SUCH
APPLICATIONS 25°C
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
42
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30
2
4
6
8
10
1.0E-05
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.4. 0: August 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 4
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
10
VDS=15V
ID=4.2A
400
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
300
200
Coss
2
100
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
100.0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
30
10µs
RDS(ON)
limited
25
100µs
1.0
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
20
15
10
0.1s
DC
TJ(Max)=150°C
TA=25°C
Power (W)
10.0
ID (Amps)
Crss
0
0
5
10s
0
0.0
0.01
0.1
1
VDS (Volts)
10
100
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
PD NOT ASSUME ANY LIABILITY ARISING
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
Rev.4. 0: August 2013
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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100
1000
Page 4 of 4