MOSFET SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) 1 0.55 ● RDS(ON) ＜ 78mΩ (VGS =-10V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● VDS (V) =-30V 2 +0.02 0.15 -0.02 1 S 2 D 1. Gate 0-0.1 3 +0.1 0.68 -0.1 G +0.2 1.1 -0.1 +0.1 0.95 -0.1 +0.1 1.9 -0.2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current (Tj=150℃) *1 Ta = 25℃ Ta = 70℃ Pulsed Drain Current *2 Power Dissipation *1 ID Ta = 70℃ Thermal Resistance.Junction- to-Ambient *1 Thermal Resistance.Junction- to-Ambient *3 PD RthJA V -3.2 -2.5 -2.6 -2.0 A -12 IDM Ta = 25℃ Unit 1.25 0.75 0.8 0.48 100 166 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 W ℃/W ℃ *1 Pulse width limited by maximum junction temperature. *2 Surface Mounted on FR4 board, t ≤ 5 s. *3 Surface Mounted on FR4 board. www.kexin.com.cn 1 MOSFET SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Test Conditions ID=-250μA, VGS=0V VDS=0V, VGS=±20V Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA Static Drain-Source On-Resistance *1 RDS(On) Input Capacitance *2 Ciss Output Capacitance *2 Coss Reverse Transfer Capacitance *2 Crss Gate resistance Rg Total Gate Charge *2 Qg Gate Source Charge *2 Qgs Gate Drain Charge *2 Qgd Turn-On DelayTime *3 td(on) Turn-On Rise Time *3 tr Turn-Off DelayTime *3 td(off) Turn-Off Fall Time *3 tf Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD 2 www.kexin.com.cn V 63 78 130 VDS=-10V, ID=-3.2A -6 mΩ A 5.0 S 380 VGS=0V, VDS=-15V, f=1MHz 100 f=1MHz 8.0 pF 75 9.0 VGS=-10V, VDS=-15V, ID=-1.7A Ω 15 nC 1.4 2.4 VGS=-4.5V, VDS=-15V, RL=15Ω,RGEN=6Ω ID=1.0A 9 20 12 20 25 40 14 21 5 sec -1.25 Steady State -0.75 IS=-0.75A,VGS=0V *3 Switching time is essentially independent of operating temperature. L7* -3.0 105 *1Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2 %. Marking nA VGS=-4.5V, ID=-2.5A *2 For DESIGN AID ONLY, not subject to production testing. ■ Marking -1.0 μA ±100 VGS=-10V, ID=-3.2A VGS=-10V, VDS ≤ -10V Unit V -10 IGSS gFS -30 VDS=-30V, VGS=0V, TJ=55℃ Gate-Body leakage current ID(ON) Max -1 IDSS On state drain current *1 Typ VDS=-30V, VGS=0V Zero Gate Voltage Drain Current Forward Transconductance *1 Min -0.85 -1.2 ns A V MOSFET SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Typical Characterisitics 12 12 V GS = 10 thru 5 V 10 4 V I D - Drain Current (A) I D - Drain Current (A) 10 8 6 4 6 4 T C = 125 °C 25 °C 3 V 2 8 2 - 55 °C 2 V 0 0 2 4 6 8 0 0.0 10 0.5 1.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.0 2.5 3.0 3.5 4.0 4.5 Transfer Characteristics 700 0.30 600 C - Capacitance (pF) 0.25 R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) 0.20 0.15 V GS = 4.5 V 0.10 V GS = 10 V 0.05 500 C iss 400 300 200 C oss 100 C rss 0 0.00 0 2 4 6 8 0 10 5 10 20 25 30 VDS - Drain-to-Source Voltage (V) I D- Drain Current (A) Capacitance On-Resistance vs. Drain Current 1.6 10 V GS = 10 V I D = 3.2 A V DS = 15 V ID = 3 A 8 R DS(on) - On-Resistance (Ω) (Normalized) VGS - Gate-to-Source Voltage (V) 15 6 4 1.4 1.2 1.0 0.8 2 0 0 2 4 6 Qg - Total Gate Charge (nC) Gate Charge 8 10 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.kexin.com.cn 3 MOSFET SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Typical Characterisitics 0.6 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.5 T J = 150 °C 0.4 0.3 I D = 3.2 A 0.2 0.1 T J = 25 °C 0.0 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 8 10 On-Resistance vs. Gate-to-Source Voltage 0.3 10 0.2 8 I D = 250 µA Power (W) 0.1 0.0 6 4 - 0.1 - 0.3 - 50 T A = 25 °C 2 - 0.2 0 - 25 0 25 50 75 100 125 . 150 0.01 0.1 1 TJ - Temperature (°C) Single Pulse Power 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 µs 100 µs 1 ms 1 10 ms 100 ms 0.1 10 s, 1 s DC, 100 s 0.01 T A = 25 °C Single Pulse 0.001 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Square Wave Pulse Duration (s) Safe Operating Area, Junction-to-Case www.kexin.com.cn 10 Time (s) Threshold Voltage 4 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage VGS(th) Variance (V) 4 100 100 1000 MOSFET SMD Type P-Channel Enhancement MOSFET SI2307BDS (KI2307BDS) ■ Typical Characterisitics 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 P DM 0.1 0.05 t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 62.5 °C/W 0.02 3. TJM - TA = P DM Z thJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.kexin.com.cn 5