Single N-channel MOSFET ELM16400EA-S ■General description ■Features ELM16400EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=30V Id=6.9A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 33mΩ (Vgs=4.5V) Rds(on) < 52mΩ (Vgs=2.5V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Symbol Limit Unit Drain-source voltage Vds 30 V Gate-source voltage Vgs ±12 V Ta=25°C Continuous drain current 6.9 Id Ta=70°C Pulsed drain current 5.8 35 2.00 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 1.44 -55 to 150 Note A 1 A 2 W 1 °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja 47.5 74.0 62.5 110.0 °C/W °C/W 1 Maximum junction-to-lead Steady-state Rθjl 37.0 50.0 °C/W 3 ■Pin configuration ■Circuit D SOT-26(TOP VIEW) 6 1 5 2 4 3 Pin No. Pin name 1 2 3 DRAIN DRAIN GATE 4 5 6 SOURCE DRAIN DRAIN 4-1 G S Single N-channel MOSFET ELM16400EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Rds(on) Gfs Vsd 1 5 μA 100 nA 1.1 1.4 V A 22.3 28.0 31.5 39.0 26.8 42.8 33.0 52.0 mΩ mΩ 1.00 S V 3 A 1030 pF 99 77 1.2 3.6 pF pF Ω 9.60 12.00 nC Ta=55°C 0.7 35 Ta=125°C Vgs=4.5V, Id=6A Vgs=2.5V, Id=5A Vds=5V, Id=5A Is=1A, Vgs=0V Ciss Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 10 15 0.71 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=6.9A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 823 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg 1.65 3.00 nC nC td(on) 5.5 ns tr Vgs=10V, Vds=15V td(off) RL=2.7Ω, Rgen=6Ω 5.1 37.0 ns ns 4.2 16.0 8.9 ns ns nC tf trr Qrr Vgs=4.5V, Vds=15V, Id=5.8A mΩ If=5A, dIf/dt=100A/μs If=5A, dIf/dt=100A/μs 20.0 NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM16400EA-S ■Typical electrical and thermal characteristics 25 20 10V 3V Vds=5V 16 4.5V 2.5V 15 Id(A) Id (A) 20 10 8 125°C Vgs=2V 5 12 0 0 0 1 2 3 4 5 0 0.5 Vds (Volts) Fig 1: On-Region characteristics 1.5 2 2.5 3 Normalized On-Resistance 1.8 50 Rds(on) (m� ) 1 Vgs(Volts) Figure 2: Transfer Characteristics 60 Vgs=2.5V 40 30 Vgs=4.5V 20 Vgs=10V 10 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 Vgs=2.5V 1 0.8 0 5 10 15 20 0 25 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 70 1.0E+01 60 1.0E+00 1.0E-01 50 Is (A) 125°C 40 30 125 150 175 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 100 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id=5A Rds(on) (m� ) 25°C 4 1.0E-05 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single N-channel MOSFET ELM16400EA-S 5 1400 Vds=15V Id=6.9A 4 1200 Capacitance (pF) Vgs (Volts) 1000 3 2 1 800 600 400 Coss Crss 200 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 12 0 Rds(on) 10.0 limited 1ms 1.0 10ms 10s DC 1 10 100 20 Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 30 Tj(max)=150°C Ta=25°C 0 0.001 0.1 10 25 Vds 15 (Volts) 20 Figure 8: Capacitance Characteristics 10 1s 0.1 10 30 100�s 0.1s 5 40 Tj(max)=150°C Ta=25°C Power (W) 0 Id (Amps) Ciss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000