Single P-channel MOSFET ELM16405EA-S ■General description ■Features ELM16405EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 52mΩ (Vgs=-10V) Rds(on) < 87mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Symbol Vds Limit -30 Unit V Vgs ±20 V Id -5.0 -4.2 A 1 A 2 W 1 Idm Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj, Tstg -20 2.0 1.4 -55 to 150 Note °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 47.5 74.0 37.0 62.5 110.0 50.0 °C/W °C/W °C/W 1 5 2 1 3 ■Circuit SOT-26(TOP VIEW) 6 Note 4 3 D Pin No. 1 2 Pin name DRAIN DRAIN 3 4 5 GATE SOURCE DRAIN 6 DRAIN 4- 1 G S Single P-channel MOSFET ELM16405EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Symbol Condition Min. Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -30 μA ±100 nA -1.8 -3.0 V A 39 54 52 70 67 8.6 87 mΩ S Is=-1A, Vgs=0V -0.77 -1.00 -2.8 V A 840 Vgs=0V, Vds=-15V, f=1MHz 700 120 pF pF Vgs=0V, Vds=0V, f=1MHz 75 10 Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Static drain-source on-resistance Tj=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Rds(on) Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Crss Rg Total gate charge (10V) Total gate charge (4.5V) Gate-source charge Qg Qg Qgs V -1 -5 Zero gate voltage drain current Gate threshold voltage On state drain current Typ. Ta=25°C Max. Unit Vgs=-10V, Id=-5A -1.0 -20 Tj=125°C Vgs=-4.5V, Id=-4A Vds=-5V, Id=-5A 6.0 15 pF Ω Vgs=-10V, Vds=-15V Id=-5A 14.7 7.6 2.0 Gate-drain charge Turn-on delay time Turn-on rise time Qgd td(on) tr Vgs=-10V, Vds=-15V 3.8 8.3 5.0 nC ns ns Turn-off delay time Turn-off fall time Body diode reverse recovery time td(off) Rl=3Ω, Rgen=3Ω tf trr If=-5A, dl/dt=100A/μs 29.0 14.0 23.5 ns ns ns Body diode reverse recovery charge Qrr If=-5A, dl/dt=100A/μs 13.4 18.0 9.5 mΩ 30.0 nC nC nC nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single P-channel MOSFET ELM16405EA-S ■Typical electrical and thermal characteristics 20 -10V -4.5V 15 -4V 10 -3.5V Vgs=-3V 5 0 0.00 2.00 3.00 4.00 6 4 125°C 2 -2.5V 1.00 Vds=-5V 8 -Id (A) -Id (A) 10 -5V -6V 25°C 0 5.00 0 1 100 4 1.60E+00 80 Normalized On-Resistance Rds(on) (m� ) 3 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Figure 1: On-Region Characteristics Vgs=-4.5V 60 Vgs=-10V 40 20 1 3 5 7 Vgs=-4.5V 1.40E+00 Vgs=-10V 1.20E+00 Id=-5A 1.00E+00 8.00E-01 9 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 Id=-5A 120 1E-01 100 1E-02 -Is (A) Rds(on) (m� ) 2 125°C 80 125°C 1E-03 25°C 1E-04 60 1E-05 25°C 40 1E-06 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.2 Single P-channel MOSFET ELM16405EA-S 10 1000 Capacitance (pF) 8 -Vgs (Volts) 1200 Vds=-15V Id=-5A 6 4 2 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 12 14 Crss 0 16 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C Ta=25°C 40 30 100�s 1ms 0.1s 1 10ms 10s 0.1 DC 1 10 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -Vds (Volts) Z�ja Normalized Transient Thermal Resistance 30 20 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 25 10 1s 0.1 20 Tj(max)=150°C Ta=25°C 10�s Rds(on) limited 10 15 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000