Single N-channel MOSFET ELM13400CA-S ■General description ■Features ELM13400CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=30V Id=5.8A (Vgs=10V) Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 33mΩ (Vgs=4.5V) Rds(on) < 52mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Continuous drain current 30 ±12 5.8 Id Ta=70°C Pulsed drain current 4.9 30 1.4 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg V V 1.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 65 85 43 90 125 60 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4-1 Single N-channel MOSFET ELM13400CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Rds(on) Gfs Vsd 1 5 μA 100 nA 1.1 1.4 V A 22.8 28.0 32.0 39.0 27.3 43.3 33.0 52.0 Ta=55°C 0.7 30 Ta=125°C Vgs=4.5V, Id=5A Vgs=2.5V, Id=4A Vds=5V, Id=5A Is=1A, Vgs=0V Ciss Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V 10 15 0.71 1.00 2.5 A 1030 pF 99 77 1.2 3.6 pF pF Ω 9.7 12.0 nC 823 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Vgs=4.5V, Vds=15V, Id=5.8A mΩ S V Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 30 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=10V, Id=5.8A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 1.6 3.1 nC nC td(on) 3.3 5.0 ns tr Vgs=10V, Vds=15V td(off) RL=2.7Ω, Rgen=3Ω 4.8 26.3 7.0 40.0 ns ns 4.1 16.0 8.9 6.0 20.0 12.0 ns ns nC tf trr Qrr If=5A, dIf/dt=100A/μs If=5A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM13400CA-S ■Typical electrical and thermal characteristics 25 20 10V 3V 2.5V 15 12 10 8 Vgs=2V 5 125°C 0 0 1 2 3 4 Vds(Volts) Fig 1: On-Region Characteristics 5 0 60 0.5 1 1.5 2 2.5 Vgs(Volts) Figure 2: Transfer Characteristics 3 Normalized On-Resistance 1.8 50 Vgs=2.5V 40 30 Vgs=4.5V 20 Vgs=10V 1.6 Vgs=4.5V 1.4 Vgs=10V 1.2 Vgs=2.5V 1 0.8 10 0 5 10 15 20 0 25 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 60 1.0E+00 1.0E-01 50 Is (A) 125°C 40 30 75 100 125 150 175 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 20 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id=5A Rds(on) (m� ) 25°C 4 0 Rds(on) (m� ) Vds=5V 16 4.5V Id(A) Id (A) 20 1.0E-05 1.0E-06 10 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single N-channel MOSFET ELM13400CA-S 5 1200 Capacitance (pF) 4 Vgs (Volts) 1400 Vds=15V Id=5A 3 2 1 1000 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 1.0 10ms 10s DC 0.1 1 10 100 30 20 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance 25 Tj(max)=150°C Ta=25°C 0 0.001 Vds (Volts) 10 20 10 1s 0.1 15 30 100�s 0.1s 10 40 Tj(max)=150°C Ta=25°C Rds(on) 10.0 limited 5 Vds (Volts) Figure 8: Capacitance Characteristics Power (W) Id (Amps) 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000