Single P-channel MOSFET ELM14419AA-N ■General description ■Features ELM14419AA-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-9.7A (Vgs=-10V) Rds(on) < 20mΩ (Vgs=-10V) Rds(on) < 35mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±20 -9.7 V Ta=25°C Continuous drain current Ta=70°C Pulsed drain current Id -8.1 -40 Idm Tc=25°C Power dissipation Tc=70°C Junction and storage temperature range Pd Tj, Tstg 3.0 2.1 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Rθja Maximum junction-to-lead Steady-state Rθjl ■Pin configuration Typ. 31 63 Max. 40 75 Unit °C/W °C/W Note 21 30 °C/W 3 1 ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 2 Pin name SOURCE SOURCE 3 4 5 SOURCE GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM14419AA-N ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vgs=-10V Rds(on) Id=-9.7A Ta=125°C Vgs=-4.5V, Id=-7A Gfs Vds=-5V, Id=-9.7A Vsd -1 -5 μA ±100 nA Is=-1A, Vgs=0V -1.4 -40 -2.0 -2.7 V A 16.0 20.0 20.9 26.0 21.7 26.0 35.0 -0.7 -1.0 V -1.2 A 1900 pF pF Is Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Qg Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Input capacitance Output capacitance Total gate charge (4.5V) Gate-source charge -30 Vgs=0V, Vds=-15V, f=1MHz 1573 319 Vgs=0V, Vds=0V, f=1MHz 211 6.7 Vgs=-10V, Vds=-15V, Id=-9.7A 26.4 13.7 3.8 Vgs=-10V, Vds=-15V td(off) RL=1.5Ω, Rgen=3Ω tf trr If=-9.7A, dIf/dt=100A/μs Qrr If=-9.7A, dIf/dt=100A/μs NOTE : 8.0 32.0 17.0 mΩ mΩ S pF Ω nC nC nC 6.8 9.5 nC ns 8.0 ns 44.2 22.2 25.2 ns ns ns 14.1 31.0 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM14419AA-N ■Typical electrical and thermal characteristics 30 30 -10V -5V 25 -4V 20 15 -Id(A) 20 -Id (A) Vds=-5V 25 -3.5V 15 10 10 5 125°C 5 Vgs=-3V 0 25°C 0 0 1 2 3 4 5 1 1.5 35 3 3.5 4 4.5 5 Normalized On-Resistance 1.60 30 Rds(on) (m�) 2.5 -Vgs(Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics Vgs=-4.5V 25 20 15 Vgs=-10V 10 0 5 10 15 20 Id=-9.7A 1.40 Vgs=-10V 1.20 Vgs=-4.5V Id=-7A 1.00 0.80 25 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1.0E+01 1.0E+00 Id=-9.7A 50 1.0E-01 40 30 -Is (A) Rds(on) (m�) 2 125°C 20 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 10 1.0E-05 25°C 1.0E-06 0 3 4 5 6 7 8 9 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 0.0 0.2 0.4 0.6 0.8 -Vsd (Volts) Figure 6: Body-Diode Characteristics 1.0 Single P-channel MOSFET ELM14419AA-N 10 2000 1750 Capacitance (pF) 8 -Vgs (Volts) 2250 Vds=-15V Id=-9.7A 6 4 Ciss 1500 1250 1000 750 Coss 500 2 Crss 250 0 0 4 8 12 16 20 24 0 28 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max)=150°C, Ta=25°C 1ms 10ms 1.0 1s 10s 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 30 Tj(max)=150°C Ta=25°C 20 DC 1 10 25 10 0.1 0.1 20 30 100�s 0.1s 15 40 10�s Rds(on) limited 10.0 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100.0 5 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=40°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000