Single N-channel MOSFET ELM32434LA-S ■General description ■Features ELM32434LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • Vds=600V • Id=2A • Rds(on) < 4.4Ω (Vgs=10V) ■Maximum absolute ratings Ta=25°C. Unless otherwise noted. Parameter Drain-source voltage Gate-source voltage Continuous drain current Limit Unit Vds Vgs 600 ±30 V V Ta=25°C Ta=100°C Pulsed drain current Avalanche current Avalanche energy Symbol L=10mH Idm 2.0 1.1 7 Ias 2.4 A 5 Eas 29 mJ 5 Id Tc=25°C Power dissipation Tc=100°C Junction and storage temperature range Note 50 Pd 4 A 3, 4 W 20 -55 to 150 Tj, Tstg A °C ■Thermal characteristics Parameter Maximum junction-to-case Symbol Rθjc Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. 2.5 Unit °C/W 62.5 °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 6-1 G S Single N-channel MOSFET ELM32434LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=600V, Vgs=0V, Ta=100°C 250 Vds=0V, Vgs=±30V ±100 nA 4.5 4.4 V Ω 1 S 1 1.5 V 1 2 A 3 Vgs(th) Vds=Vgs, Id=250μA Rds(on) Vgs=10V, Id=1A Vds=10V, Id=1A Diode forward voltage Vsd If=2A, Vgs=0V Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V 25 Gfs Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge 600 Vds=600V, Vgs=0V, Ta=25°C Forward transconductance Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 2.5 3.7 1.9 Is Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Vgs=0V, Vds=15V, f=1MHz Vgs=10V, Vds=300V, Id=1.2A Vds=300V, Id=2A, Rgen=25Ω μA 342 pF 47 6 pF pF 7.8 3.1 nC nC 2 2 2.3 15 30 nC ns ns 2 2 2 28 36 ns ns 2 2 Body diode reverse recovery time trr If=2A, dIf/dt=100A/μs 780 ns Body diode reverse recovery charge Qrr Vgs=0V 3.8 μC NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Limited only by maximum temperature allowed. 5. Vdd=60V, starting Tj=25°C. 6-2 Single N-channel MOSFET TO-252 Halogen-Free & Lead-Free ■Typical electrical and thermal characteristics Output Characteristics Transfer Characteristics 5 VGS = 10V VGS = 6V 2.0 1.5 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 2.5 P0260AD N-Channel Enhancement Mode ELM32434LA-S Field Effect Transistor NIKO-SEM VGS = 5V 1.0 VGS = 4.5V 0.5 0 0 20 4 8 12 16 VDS, Drain-To-Source Voltage(V) 4 3 2 TJ=125°C TJ=25°C 1 TJ= - 20°C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, Gate-To-Source Voltage(V) 420 RDS(ON) x 2.6 V G S = 0V , f=1 M H Z C , Capacitance(pF) RDS(ON)ON-Resistance(OHM) 360 RDS(ON) x 2.2 RDS(ON) x 1.8 RDS(ON) x 1.4 RDS(ON) x 1.0 RDS(ON) x 0.2 - 50 0 25 50 75 100 125 C iss 300 240 180 120 60 VGS = 10V ID = 1A - 25 C oss C rss 0 150 1 TJ , Junction Temperature(C) 1.0E+02 VDS=300V 1.0E+01 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 100 Source-Drain Diode Forward Voltage ID=1.2A 8 10 VDS, Drain-To-Source Voltage(V) Gate charge Characteristics 10 8.0 Capacitance Characteristic On-Resistance VS Temperature RDS(ON) x 0.6 7.0 6 4 2 T J =150° C 1.0E+00 1.0E-01 T J =25° C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 0 2 4 Qg , Total Gate Charge 6 0.3 8 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source-To-Drain Voltage(V) Mar-23-2009 REV 0.9 3 6-3 Single N-channel MOSFET NIKO-SEM ELM32434LA-S N-Channel Enhancement Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free Safe Operating Area 10 P0260AD Single Pulse Maximum Power Dissipation 3500 Operation in This Area is Lim ited by RDS(ON) � 3000 SINGLE PULSE R�JC = 2.5� C/W TC=25� C 2500 1 Power(W) ID , Drain Current(A) 1ms 10m s 100m s 2000 1500 1S 0.1 1000 DC NOTE : 1.V GS= 10V 2.TC=25� C 3.R�JC = 2.5� C/W 500 4.Single Pulse 0.01 10 100 0 1000 0.0001 VDS, Drain-To-Source Voltage(V) 0.001 0.01 0.1 Single Pulse Time(s) 1 10 Transient Thermal Resistance r(t) , Normalized Effective Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] Mar-23-2009 REV 0.9 4 6-4 NIKO-SEM N-Channel Enhancement Mode Single N-channel MOSFET Field Effect Transistor ELM32434LA-S Figure 1 REV 0.9 P0260AD TO-252 Halogen-Free & Lead-Free Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Mar-23-2009 65- 5 NIKO-SEM Single N-channel MOSFET N-Channel Enhancement Mode ELM32434LA-S Field Effect Transistor P0260AD TO-252 Halogen-Free & Lead-Free Figure 7 Figure 8 REV 0.9 6-6 6 Mar-23-2009