elm32434la

Single N-channel MOSFET
ELM32434LA-S
■General description
■Features
ELM32434LA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=600V
• Id=2A
• Rds(on) < 4.4Ω (Vgs=10V)
■Maximum absolute ratings
Ta=25°C. Unless otherwise noted.
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Limit
Unit
Vds
Vgs
600
±30
V
V
Ta=25°C
Ta=100°C
Pulsed drain current
Avalanche current
Avalanche energy
Symbol
L=10mH
Idm
2.0
1.1
7
Ias
2.4
A
5
Eas
29
mJ
5
Id
Tc=25°C
Power dissipation
Tc=100°C
Junction and storage temperature range
Note
50
Pd
4
A
3, 4
W
20
-55 to 150
Tj, Tstg
A
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Symbol
Rθjc
Maximum junction-to-ambient
Rθja
■Pin configuration
Typ.
Max.
2.5
Unit
°C/W
62.5
°C/W
Note
■Circuit
D
TO-252-3(TOP VIEW)
TAB
2
1
Pin No.
Pin name
1
2
3
GATE
DRAIN
SOURCE
3
6-1
G
S
Single N-channel MOSFET
ELM32434LA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=600V, Vgs=0V, Ta=100°C
250
Vds=0V, Vgs=±30V
±100
nA
4.5
4.4
V
Ω
1
S
1
1.5
V
1
2
A
3
Vgs(th) Vds=Vgs, Id=250μA
Rds(on) Vgs=10V, Id=1A
Vds=10V, Id=1A
Diode forward voltage
Vsd
If=2A, Vgs=0V
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
25
Gfs
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
600
Vds=600V, Vgs=0V, Ta=25°C
Forward transconductance
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
2.5
3.7
1.9
Is
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Vgs=0V, Vds=15V, f=1MHz
Vgs=10V, Vds=300V, Id=1.2A
Vds=300V, Id=2A, Rgen=25Ω
μA
342
pF
47
6
pF
pF
7.8
3.1
nC
nC
2
2
2.3
15
30
nC
ns
ns
2
2
2
28
36
ns
ns
2
2
Body diode reverse recovery time
trr
If=2A, dIf/dt=100A/μs
780
ns
Body diode reverse recovery charge
Qrr
Vgs=0V
3.8
μC
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Limited only by maximum temperature allowed.
5. Vdd=60V, starting Tj=25°C.
6-2
Single N-channel MOSFET
TO-252
Halogen-Free & Lead-Free
■Typical electrical and thermal characteristics
Output Characteristics
Transfer Characteristics
5
VGS = 10V
VGS = 6V
2.0
1.5
ID, Drain-To-Source Current(A)
ID, Drain-To-Source Current(A)
2.5
P0260AD
N-Channel
Enhancement Mode
ELM32434LA-S
Field Effect Transistor
NIKO-SEM
VGS = 5V
1.0
VGS = 4.5V
0.5
0
0
20
4
8
12
16
VDS, Drain-To-Source Voltage(V)
4
3
2
TJ=125°C
TJ=25°C
1
TJ= - 20°C
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VGS, Gate-To-Source Voltage(V)
420
RDS(ON) x 2.6
V G S = 0V , f=1 M H Z
C , Capacitance(pF)
RDS(ON)ON-Resistance(OHM)
360
RDS(ON) x 2.2
RDS(ON) x 1.8
RDS(ON) x 1.4
RDS(ON) x 1.0
RDS(ON) x 0.2
- 50
0
25
50
75
100
125
C iss
300
240
180
120
60
VGS = 10V
ID = 1A
- 25
C oss
C rss
0
150
1
TJ , Junction Temperature(C)
1.0E+02
VDS=300V
1.0E+01
IS , Source Current(A)
VGS , Gate-To-Source Voltage(V)
100
Source-Drain Diode Forward Voltage
ID=1.2A
8
10
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10
8.0
Capacitance Characteristic
On-Resistance VS Temperature
RDS(ON) x 0.6
7.0
6
4
2
T J =150° C
1.0E+00
1.0E-01
T J =25° C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0
0
2
4
Qg , Total Gate Charge
6
0.3
8
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source-To-Drain Voltage(V)
Mar-23-2009
REV 0.9
3
6-3
Single N-channel MOSFET
NIKO-SEM
ELM32434LA-S
N-Channel
Enhancement Mode
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
10
P0260AD
Single Pulse Maximum Power Dissipation
3500
Operation in This Area
is Lim ited by RDS(ON)
�
3000
SINGLE PULSE
R�JC = 2.5� C/W
TC=25� C
2500
1
Power(W)
ID , Drain Current(A)
1ms
10m s
100m s
2000
1500
1S
0.1
1000
DC
NOTE :
1.V GS= 10V
2.TC=25� C
3.R�JC = 2.5� C/W
500
4.Single Pulse
0.01
10
100
0
1000
0.0001
VDS, Drain-To-Source Voltage(V)
0.001
0.01
0.1
Single Pulse Time(s)
1
10
Transient Thermal Resistance
r(t) , Normalized Effective
Transient Thermal Response Curve
T1 , Square Wave Pulse Duration[sec]
Mar-23-2009
REV 0.9
4
6-4
NIKO-SEM
N-Channel
Enhancement
Mode
Single N-channel
MOSFET
Field Effect Transistor
ELM32434LA-S
Figure 1
REV 0.9
P0260AD
TO-252
Halogen-Free & Lead-Free
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Mar-23-2009
65- 5
NIKO-SEM
Single N-channel MOSFET
N-Channel Enhancement Mode
ELM32434LA-S
Field Effect Transistor
P0260AD
TO-252
Halogen-Free & Lead-Free
Figure 7
Figure 8
REV 0.9
6-6
6
Mar-23-2009