ELM-TECH ELM34419AA-N

Single P-channel MOSFET
ELM34419AA-N
■General description
■Features
ELM34419AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-10A
Rds(on) < 20mΩ (Vgs=-10V)
Rds(on) < 35mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±25
V
Ta=25°C
Continuous drain current
Ta=70°C
-10
Id
A
Pulsed drain current
Idm
-8
-55
Avalanche current
Iar
-29
A
Eas
43
3
2
-55 to 150
mJ
Avalanche energy
L=0.1mH
Ta=25°C
Ta=70°C
Power dissipation
Junction and storage temperature range
Pd
Tj, Tstg
Note
A
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Rθjc
Rθja
■Pin configuration
Typ.
Max.
25
40
Unit
°C/W
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
4- 1
D
G
S
Single P-channel MOSFET
ELM34419AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Min.
BVdss Id=-250μA, Vgs=0V
-30
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
V
Vds=-24V, Vgs=0V
-1
-10
μA
±100
nA
-1.5
15
-3.0
20
V
mΩ
25
35
mΩ
-1.2
S
V
-2.5
A
Vds=-20V, Vgs=0V, Tj=125°C
Vds=0V, Vgs=±25V
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-10V, Id=-10A
Rds(on)
Vgs=-4.5V, Id=-7A
Gfs
Vsd
Ta=25°C
Typ. Max. Unit Note
Vds=-10V, Id=-10A
Is=-1A, Vgs=0V
-1.0
24
Is
1
1
1
DYNAMIC PARAMETERS
Input capacitance
Ciss
1490
pF
Output capacitance
Reverse transfer capacitance
Gate resistance
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Rg Vgs=15mV, Vds=0V, f=1MHz
301
190
7.8
pF
pF
Ω
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Qg
Qgs
26
4
nC
nC
2
2
Vgs=-10V, Vds=-15V
Id=-10A
9.0
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
tr
Vgs=-10V, Vds=-15V
5
5.7
10.0
nC
ns
ns
2
2
2
Turn-off delay time
Turn-off fall time
td(off) Id≈-1A, Rgen=6Ω
tf
18.0
5.0
ns
ns
2
2
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
Single P-channel MOSFET
Level Enhancement Mode P2003EV8
NIKO-SEM P-Channel LogicELM34419AA-N
SOP-8
Field Effect Transistor
Halogen-Free & Lead-Free
(Preliminary)
■Typical electrical and thermal characteristics
Output Characteristics
V GS = 10V
0.050
V GS = 5V
RDS(ON)ON-Resistance(OHM)
-ID, Drain-To-Source Current(A)
60
50
V GS = 7V
V GS = 4.5V
40
30
20
10
V GS = 3V
0
0.5
1
1.5
2
0.045
0.040
0.025
0.015
0.010
On-Resistance VS Gate-To-Source
10
20
30
40
-ID , Drain-To-Source Current
50
On-Resistance VS Drain Current
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)
0
RDS(ON) x 1.8
0.05
0.04
0.03
0.02
0.01
ID = -10A
0
2
4
6
8
-VGS, Gate-To-Source Voltage(V)
RDS(ON) x 1.6
RDS(ON) x 1.4
RDS(ON) x 1.2
RDS(ON) x 1.0
RDS(ON) x 0.8
RDS(ON) x 0.6
- 50
10
Transfer Characteristics
-VGS , Gate-To-Source Voltage(V)
40
30
Tj=125°C
20
Tj=25°C
Tj=-20°C
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
- 25
0
25
50
75
100
TJ , Junction Temperature(C)
125
150
ID = -10A
VDS = -15V
8
6
4
2
0
5.0
0
-VGS, Gate-To-Source Voltage(V)
REV 0.9
VGS = 10V
ID = -10A
Gate charge Characteristics
10
50
-ID, Drain-To-Source Current(A)
VGS = 10V
0.020
-VDS, Drain-To-Source Voltage(V)
0
VGS = 4.5V
0.035
0.005
2.5
On-Resistance VS Drain Current
4.5
9
13.5
18
22.5
27
Qg , Total Gate Charge
3
4- 3
Jan-08-2009
P2003EV8
Logic Level Enhancement Mode
NIKO-SEM P-ChannelSingle
MOSFET
FieldP-channel
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
(Preliminary)
ELM34419AA-N
Capacitance Characteristic
Body Diode Forward Voltage
1 .0 E + 0 2
1750
1 .0 E + 0 1
1500
1 .0 E + 0 0
TJ =150° C
-IS , Source Current(A)
C , Capacitance(pF)
2000
1250
1 . 0 E -0 1
1000
TJ =25° C
1 . 0 E -0 2
750
1 . 0 E -0 3
500
1 . 0 E -0 4
250
0
1 .0 E -0 5
0
5
10
15
20
25
0 .2
0 .0
30
-VDS, Drain-To-Source Voltage(V)
Safe Operating Area
0 .8
1m s
1200
10m s
1000
Power(W)
.
100m s
Operation in This Area
is Lim ited by RDS(ON)
1S
10s
NOTE :
1.V GS= 10V
2.TA=25° C
3.R.JA =40° C/W
0.1
1 .2
SINGLE PULSE
R.JA= 40° C/W
TA=25° C
800
600
400
DC
200
4.Single Pulse
0.01
0.1
1 .0
Single Pulse Maximum Power Dissipation
1400
10
-ID , Drain Current(A)
0 .6
-VSD, Source-To-Drain Voltage(V)
100
1
0 .4
1
10
0
0.0001
100
0.001
-VDS, Drain-To-Source Voltage(V)
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Resistance
r(t) , Mormalized Effective
Transient Thermal Response Curve
T1 , Square Wave Pulse Duration[sec]
REV 0.9
4
4- 4
Jan-08-2009