Single N-channel MOSFET ELM33414CA-S ■General description ■Features ELM33414CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 3.5V and internal ESD protection is included. • • • • • • Vds=60V Id=300mA Rds(on) < 2Ω (Vgs=10V) Rds(on) < 3Ω (Vgs=4.5V) Rds(on) < 5Ω (Vgs=3.5V) ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Symbol Vds Vgs Ta=25°C Ta=100°C Pulsed drain current Limit 60 ±20 300 190 1 Id Idm Ta=25°C Ta=100°C Junction and storage temperature range Power dissipation Unit V V mA A 0.35 0.14 -40 to 150 Pd Tj, Tstg Note 3 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 350 1 2 Note ■Circuit SOT-23(TOP VIEW) 3 Unit °C/W D Pin No. Pin name 1 2 GATE SOURCE 3 DRAIN G S 4- 1 Single N-channel MOSFET ELM33414CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=100μA, Vgs=0V Min. Ta=25°C Typ. Max. Unit Note 60 V Zero gate voltage drain current Idss Vds=48V, Vgs=0V Vds=40V, Vgs=0V, Tj=125°C 1 10 μA Gate-body leakage current Igss Vds=0V, Vgs=±16V ±30 μA 2.5 V A 1 Ω 1 S 1 V mA 1 Gate threshold voltage On state drain current Static drain-source on-resistance Vgs(th) Vds=Vgs, Id=100μA Id(on) Vgs=10V, Vds=10V 1.0 1 1.8 Vgs=10V, Id=200mA 1.6 2.0 Rds(on) Vgs=4.5V, Id=100mA Vgs=3.5V, Id=10mA 1.7 2.1 3.0 5.0 Forward transconductance Gfs Vds=20V, Id=200mA Diode forward voltage Max. body-diode continuous current Vsd Is If=200mA, Vgs=0V If=200mA, Vgs=0V DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Gate-source charge Gate-drain charge Qgs Qgd Qg Vgs=0V, Vds=25V, f=1MHz Vgs=10V, Vds=30V Id=200mA NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4- 2 0.18 1.2 300 36 10 pF pF 6 pF 1.6 nC 2 0.2 1.0 nC nC 2 2 Single N-channel MOSFET ELM33414CA-S N-Channel Logic Level Enhancement Modecharacteristics Field Effect Transistor ■Typical electrical and thermal NIKO-SEM Output Characteristics VGS=10V VGS=9 V VGS=8 V VGS=7 V VGS=6 V VGS=5 V 6.0E-01 VGS =3.5V 4.0E-01 2.0E-01 0.0E+00 0 1 2 3 4 0.6 0.4 25� � 0.2 0 5 1 1.5 VDS, Drain-To-Source Voltage(V) 2.0 45 RDS(ON) � 1.8 40 RDS(ON) � 1.6 RDS(ON) � 1.4 RDS(ON) � 1.2 RDS(ON) � 1.0 RDS(ON) � 0.8 RDS(ON) � 0.6 RDS(ON) � 0.4 V GS=10V ID=200m A 3 3.5 4 CISS 35 30 25 20 15 COSS 10 CRSS 5 0 -50 -25 0 25 50 75 100 TJ , Junction Temperature(˚C) 125 150 0 Gate charge Characteristics Characteristics =30V 5 10 15 20 25 VDS, Drain-To-Source Voltage(V) 30 Source-Drain Diode Forward Voltage 1.0E+03 VDS ID =0.2A 1.0E+02 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) 2.5 Capacitance Characteristic On-Resistance VS Temperature 10 2 VGS, Gate-To-Source Voltage(V) C , Capacitance(pF) RDS(ON)ON-Resistance(OHM) RDS(ON) � SOT-23(S) Halogen-Free & Lead-Free Transfer Characteristics 0.8 ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) 8.0E-01 PZ2N7002M 1.0E+01 6 1.0E+00 4 2 T J =150°C 1.0E-01 T J =25°C 1.0E-02 1.0E-03 1.0E-04 0 0 0.4 0.8 1.2 Qg , Total Gate Charge(nC) 0.1 1.6 0.3 0.5 0.7 0.9 1.1 VSD, Source-To-Drain Voltage(V) Jun-01-2011 REV 0.91 3 4- 3 1.3 Single N-channel MOSFET ELM33414CA-S N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM Safe Operating Area 10 PZ2N7002M SOT-23(S) Halogen-Free & Lead-Free Single Pulse Maximum Power Dissipation 20 Operation in This Area is Lim ited by RDS(ON) � 1m s 0.1 10m s 5 1S 10S DC 0 0.001 1 10 0.001 100 VDS, Drain-To-Source Voltage(V) Transient Thermal Resistance 0.01 0.1 1 10 Single Pulse Time(s) Transient Thermal Response Curve 1.00E+01 r(t) , Normalized Effective 10 100m s NOTE : 1.V GS= 10V 2.TA=25� �C 3.RJA = 350� � C/W 4.Single Pulse 0.01 SINGLE PULSE RJA = 350� � C/W TA=25� �C 15 Power(W) ID , Drain Current(A) 1 1.00E+00 Duty Cycle=0.5 Note 0.2 1.00E-01 0.1 0.05 1.Duty cycle, D= t1 / t2 2.RthJA =350 oC/W 3.TJ-TA = P*RthJC(t) 4.RthJC(t) = r(t)*RthJA 0.02 0.01 single Pluse 1.00E-02 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 T1 , Square Wave Pulse Duration[sec] Jun-01-2011 REV 0.91 4 4- 4