Single P-channel MOSFET ELM340703A-N ■General description ■Features ELM340703A-N uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • Vds=-30V Id=-15A Rds(on) < 7mΩ (Vgs=-10V) Rds(on) < 12mΩ (Vgs=-4.5V) ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Avalanche current Avalanche energy L=0.1mH Tc=25°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Tc=70°C Junction and storage temperature range Idm -15 -11 -69 Ias -69 A Eas 238 2.5 mJ Id Pd Tj, Tstg A A 3 W 1.6 -55 to 150 °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 50 °C/W Note ■Circuit SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Pin No. 1 Pin name SOURCE 2 3 SOURCE SOURCE 4 5 GATE DRAIN 6 7 8 DRAIN DRAIN DRAIN 4-1 D G S Single P-channel MOSFET ELM340703A-N ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage Static drain-source on-resistance Condition Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±16V ±30 μA -1.7 4.8 -3.0 7.0 V 6.8 12.0 Gfs Vds=-5V, Id=-15A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-15A, Vgs=0V Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Vgs=0V, Vds=-15V, f=1MHz Crss Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Qgs Qgd td(on) Vgs=-10V, Vds=-15V Id=-15A tr Vgs=-10V, Vds=-15V td(off) Id=-15A, Rgen=6Ω Turn-off fall time tf Reverse recovery time trr Reverse recovery charge Qrr V -1 Forward transconductance Turn-off delay time -30 Vds=-24V, Vgs=0V Vgs(th) Vds=Vgs, Id=-250μA Vgs=-10V, Id=-15A Rds(on) Vgs=-4.5V, Id=-10A Qg Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=-15A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 -1.0 25 -1.2 -15 μA mΩ 1 S 1 V A 1 5200 885 789 pF pF pF 119 nC 2 14 31 26 nC nC ns 2 2 2 29 225 ns ns 2 2 124 ns 2 35 ns 20 nC Single P-channel MOSFET P-Channel Logic Level Enhancement Mode PZ0703EV ELM340703A-N SOP-8 Field Effect Transistor Halogen-Free & Lead-Free ■Typical electrical and thermal characteristics NIKO-SEM Output Characteristics On-Resistance VS Drain Current 0.008 RDS(ON)ON-Resistance(OHM) -ID, Drain-To-Source Current(A) 60 VGS =-3V 48 VGS =-10V VGS =-7V VGS =-5V VGS =-4.5V 36 24 VGS =-2.5V 12 0 0 1 2 3 4 5 6 7 0.007 0.005 VGS = -10V 0.004 0.003 0.002 0.001 0 8 0 -VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source 0.008 0.006 0.004 0.002 12 24 36 1.6 1.4 1.2 1.0 0.8 V GS=-10V ID=-15A ID = -15A 0 2 4 6 8 -VGS, Gate-To-Source Voltage(V) 0.4 10 -50 Transfer Characteristics 48 36 24 125℃ 25℃ 12 -20℃ 0 0 1 2 3 4 0 25 50 75 100 125 Junction Temperature(˚C) 150 Characteristics ID=-15A VDS=-15V 8 6 4 2 0 5 0 -VGS, Gate-To-Source Voltage(V) REV 1.0 -25 TJ , Gate charge Characteristics 10 -VGS , Gate-To-Source Voltage(V) 60 60 1.8 0.6 0 48 -ID , Drain-To-Source Current On-Resistance VS Temperature 2.0 Normalized Drain to Source ON-Resistance RDS(ON)ON-Resistance(OHM) 0.01 -ID, Drain-To-Source Current(A) VGS = -4.5V 0.006 25 50 75 100 Qg , Total Gate Charge(nC) 3 4-3 D-42-5 Single P-channel MOSFET SOP-8 Halogen-Free & Lead-Free Capacitance Characteristic 7.00E+03 PZ0703EV P-Channel Logic Level Enhancement Mode ELM340703A-N Field Effect Transistor NIKO-SEM Body Diode Forward Voltage VS Source current 1.00E+02 6.00E+03 5.00E+03 -IS , Source Current(A) C , Capacitance(pF) CISS 4.00E+03 3.00E+03 2.00E+03 1.00E+03 COSS CRSS 5 10 15 20 -VDS, Drain-To-Source Voltage(V) 25 30 Safe Operating Area 100 125℃ 25℃ 1.00E+00 1.00E-01 0.0 0.00E+00 0 1.00E+01 0.2 0.4 0.6 0.8 1.0 1.4 Single Pulse Maximum Power Dissipation 200 160 SINGLE PULSE RθJA = 50° C/W TA=25° C 10 1m s 120 1 Power(W) -ID , Drain Current(A) 1.2 -VSD, Source-To-Drain Voltage(V) 10m s Operation in This Area is Lim ited by RDS(ON) 100m s 1S 0.1 10S DC NOTE : 1.V GS= 10V 2.TA=25° C 3.RθJA = 50° C/W 80 40 4.Single Pulse 0 0.001 0.01 0.1 1 10 -VDS, Drain-To-Source Voltage(V) Transient Thermal Resistance 0.01 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve 1.00E+01 r(t) , Mormalized Effective 100 1.00E+00 Duty cycle=0.5 Notes 0.2 1.00E-01 0.1 1.Duty cycle, D= t1 / t2 2.RthJA = 50 ℃/W 3.TJ-TA = P*RthJA(t) 4.ZthJA(t) = r(t)*ZthJA 0.05 0.02 0.01 1.00E-02 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 T1 , Square Wave Pulse Duration[sec] REV 1.0 4 4-4 D-42-5