Single P-channel MOSFET ELM13415CA-S ■General description ■Features ELM13415CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • • Vds=-20V Id=-4A (Vgs=-4.5V) Rds(on) < 43mΩ (Vgs=-4.5V) Rds(on) < 54mΩ (Vgs=-2.5V) Rds(on) < 73mΩ (Vgs=-1.8V) ESD protected ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Continuous drain current -20 ±8 -4.0 Id Ta=70°C Pulsed drain current Tc=25°C Pd Tc=70°C Junction and storage temperature range Tj, Tstg A -3.5 -30 1.5 Idm Power dissipation V V 1.0 -55 to 150 A 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 65 85 43 Max. 80 100 52 1 2 Note 1 1, 4 ■Circuit SOT-23(TOP VIEW) 3 Unit °C/W °C/W °C/W D Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 5-1 Single P-channel MOSFET ELM13415CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-20V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Rds(on) Vgs=-2.5V, Id=-4A 52 45 62 54 Vgs=-1.8V, Id=-2A Vgs=-1.5V, Id=-1A Vds=-5V, Id=-4A 54 65 20 73 -0.64 -1.00 -2 V A 620 80 50 780 115 80 940 150 110 pF pF pF 7.4 1.2 9.3 1.5 11.0 1.8 nC nC 1.0 1.8 120 2.5 nC ns Input capacitance Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Ciss Coss Crss Body diode reverse recovery time Body diode reverse recovery charge μA 43 Vsd Is Qg Qgs Qgd td(on) -0.30 -30 μA 37 Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Turn-off delay time Turn-off fall time -5 ±10 -0.90 Gfs Gate-drain charge Turn-on delay time Turn-on rise time Ta=55°C -0.57 Forward transconductance Gate-source charge V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-4.5V Id=-4A Static drain-source on-resistance -20 Ta=125°C Is=-1A, Vgs=0V Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-4A tr Vgs=-4.5V, Vds=-10V td(off) RL=2.5Ω, Rgen=3Ω tf trr Qrr If=-4A, dIf/dt=500A/μs If=-4A, dIf/dt=500A/μs 14 30 mΩ S 240 2.8 2.0 11 24 V A ns ns ns 17 36 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5-2 Single P-channel MOSFET AO3415 ELM13415CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V 35 15 -4.5V -3.0V VDS=-5V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 6 3 5 125�C 0 0 0 1 2 3 4 0 5 0.5 100 Normalized On-Resistance 1.60 VGS=-1.5V 80 60 VGS=-1.8V VGS=-2.5V 40 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note 5) -VDS (Volts) ) Fig 1: On-Region Characteristics (Note 5) RDS(ON) (mΩ Ω) 25�C VGS=-1.5V VGS=-4.5V ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 17 5 ID =-2A, VGS =-1.8V 2 10 1.20 1.00 0.80 20 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate ) Voltage (Note 5) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature ) (Note 5) 1.0E+01 120 ID=-4A 1.0E+00 40 1.0E-01 80 125� 60 -IS (A) RDS(ON) (mΩ Ω) 100 25� 125� 1.0E-02 1.0E-03 40 1.0E-04 25� 20 0 1.0E-05 0.0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note 5) 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note 5) 5-3 1.2 Single P-channel MOSFET AO3415 ELM13415CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1 800 600 200 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TJ(Max)=150�C TA=25�C 10µs RDS(ON) limited 100µs Power (W) 10.0 -ID (Amps) Coss 400 0 1ms 1.0 10ms 0.1 TJ(Max)=150�C TA=25�C 100ms 10s DC 0.01 0.1 1 -VDS (Volts) 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 10 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to) Ambient (Note 6) Figure 9: Maximum Forward Biased Safe Operating Area (Note 6) 10 100 1 0.0 Zθ JA Normalized Transient Thermal Resistance Ciss 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100�C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note 6) 5-4 100 1000 Single P-channel MOSFET ELM13415CA-S AO3415 ■Test circuit & waveform Gate Charge Test Circuit & Waveform Vgs Qg -10V - + VDC - Qgd Qgs Vds + VDC DUT Vgs Ig Charge R esistive S w itching Test C ircuit & W aveform s RL V ds Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + DUT Vgs - Rg t o ff to n V gs 10% V ds D iode R e covery T e st C ircuit & W aveform s Q rr = - V ds + Vds - DUT Isd V gs Ig Idt V gs L -Isd + V dd VDC - -I F t rr dI/dt -I R M -Vds 5-5 V dd