Single P-channel MOSFET ELM13415CA-S ■General description ■Features ELM13415CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. Internal ESD protection is included. • • • • • • Vds=-20V Id=-4A (Vgs=-4.5V) Rds(on) < 43mΩ (Vgs=-4.5V) Rds(on) < 54mΩ (Vgs=-2.5V) Rds(on) < 73mΩ (Vgs=-1.8V) ESD protected ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Symbol Limit Unit Vds Vgs -20 ±8 -4.0 V V Id Ta=70°C Pulsed drain current Ta=25°C Power dissipation Pd Ta=70°C Junction and storage temperature range Tj, Tstg A -3.5 -30 1.5 Idm Note 1.0 -55 to 150 A 3 W 2 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 65 85 43 Max. 80 100 52 1 2 Note 1 1, 4 ■Circuit D SOT-23(TOP VIEW) 3 Unit °C/W °C/W °C/W Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 5- 1 Single P-channel MOSFET ELM13415CA-S ■Electrical characteristics Parameter Symbol Condition Min. BVdss Id=-250μA, Vgs=0V -20 Typ. Ta=25°C Max. Unit STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Idss Vds=-20V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current -1 Tj=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V -5 ±10 -0.57 -0.90 Rds(on) Vgs=-2.5V, Id=-4A 37 52 45 43 62 54 Vgs=-1.8V, Id=-2A Vgs=-1.5V, Id=-1A 54 65 73 Vgs=-4.5V Id=-4A Static drain-source on-resistance V -0.30 -30 Tj=125°C Forward transconductance Gfs Vds=-5V, Id=-4A 20 Diode forward voltage Vsd Is=-1A, Vgs=0V -0.64 Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Is Ciss Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Coss Crss Total gate charge Gate-source charge Qg Qgs Gate-drain charge Qgd Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=0V, Vds=-10V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-4A If=-4A, dl/dt=500A/μs If=-4A, dl/dt=500A/μs μA V A mΩ S -1.00 V -2 A 620 780 940 pF 80 50 115 80 150 110 pF pF 7.4 1.2 9.3 1.5 11.0 1.8 nC nC 1.0 1.8 2.5 nC td(on) tr Vgs=-4.5V, Vds=-10V td(off) Rl=2.5Ω, Rgen=3Ω tf trr Qrr μA 11 24 120 240 2.8 ns ns ns 2.0 14 30 ns ns nC 17 36 NOTE : 1. The value of Rθja is measured with the device mounted on 1in2 FR-4 board of 2oz. Copper, in still air environment with Ta =25°C. The value in any given application depends on the user's specific board design. 2. The power dissipation Pd is based on Tj(Max)=150°C, using 10s junction-to-ambient thermal resistance. 3. Repetitive rating, pulse width limited by junction temperature Tj(Max)=150°C. Ratings are based on low frequency and duty cycles to keep initial Tj=25°C. 4. The Rθja is the sum of the thermal impedence from junction to lead Rθjl and lead to ambient. 5. The static characteristics in Figures 1 to 6 are obtained using <300μs pulses, duty cycle 0.5% max. 6. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, assuming a maximum junction temperature of Tj(Max)=150°C. The SOA curve provides a single pulse rating. 5- 2 Single P-channel MOSFET AO3415 ELM13415CA-S ■Typical electrical and thermal characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V 35 15 -4.5V -3.0V VDS=-5V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 6 3 5 125�C 0 0 0 1 2 3 4 0 5 0.5 100 Normalized On-Resistance 1.60 VGS=-1.5V 80 60 VGS=-1.8V VGS=-2.5V 40 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) RDS(ON) (mΩ Ω) 25�C VGS=-1.5V VGS=-4.5V ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 17 5 ID=-2A, VGS=-1.8V 2 10 1.20 1.00 0.80 20 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+01 120 ID=-4A 1.0E+00 40 1.0E-01 80 125� 60 -IS (A) RDS(ON) (mΩ Ω) 100 125� 25� 1.0E-02 1.0E-03 40 1.0E-04 25� 20 0 1.0E-05 0.0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 5- 3 1.2 Single P-channel MOSFET AO3415 ELM13415CA-S TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1 800 600 200 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1000 100.0 TJ(Max)=150�C TA=25�C 10µs RDS(ON) limited 100µs Power (W) 10.0 -ID (Amps) Coss 400 0 1ms 1.0 10ms 0.1 TJ(Max)=150�C TA=25�C 100ms 0.01 0.1 1 -VDS (Volts) 1 10 1 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 10s DC 0.0 Zθ JA Normalized Transient Thermal Resistance Ciss 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=100�C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 5- 4 100 1000 Single P-channel MOSFET ELM13415CA-S AO3415 ■Test circuit & waveform Gate Charge Test Circuit & Waveform Vgs Qg -10V - + VDC - Qgd Qgs Vds + VDC DUT Vgs Ig Charge R esistive S w itching Test C ircuit & W aveform s RL V ds Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + DUT Vgs - Rg t o ff to n V gs 10% V ds D iode R e covery T e st C ircuit & W aveform s Q rr = - V ds + DUT Vds - Isd V gs Ig Idt V gs L -Isd + V dd VDC - -I F t rr dI/dt -I R M -Vds 5- 5 V dd