AO8801A 20V P-Channel MOSFET General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS -20V ID (at VGS=-10V) -4.5A RDS(ON) (at VGS= -4.5V) < 42mΩ RDS(ON) (at VGS= -2.5V) < 54mΩ RDS(ON) (at VGS= -1.8V) < 68mΩ D1 D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 1.5 W 0.96 TJ, TSTG Symbol t ≤ 10s V -30 PD TA=70°C ±8 -3.6 IDM TA=25°C Units V -4.5 ID TA=70°C Maximum -20 RθJA RθJL -55 to 150 Typ 63 101 64 °C Max 83 130 83 Units °C/W °C/W °C/W www.freescale.net.cn AO8801A 20V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µΑ -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 TJ=55°C -5 ±10 µA V 35 42 49 59 VGS=-2.5V, ID=-4A 43 54 mΩ VGS=-1.8V, ID=-3A 54 68 mΩ 20 -1 V -2 A 905 pF TJ=125°C Forward Transconductance VDS=-5V, ID=-4.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge µA -0.9 gFS Crss Units -0.57 VGS=-4.5V, ID=-4.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-4.5A A -0.64 mΩ S 600 751 80 115 150 pF 48 80 115 pF 6 13 20 Ω 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=500A/µs 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs 40 51 62 VGS=-4.5V, VDS=-10V, RL=2.2Ω, RGEN=3Ω 13 ns 9 ns 19 ns 29 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 2/5 www.freescale.net.cn AO8801A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V 15 -4.5V VDS=-5V 35 -3.0V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 3 5 125°C 25°C VGS=-1.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 80 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 1.60 70 VGS=-1.8V RDS(ON) (mΩ Ω) 6 60 50 VGS=-2.5V VGS=-4.5V 40 30 ID=-4.5A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-3A, VGS=-1.8V 1.00 0.80 20 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 120 1.0E+01 ID=-4.5A 1.0E+00 100 -IS (A) RDS(ON) (mΩ Ω) 1.0E-01 80 60 125°C 40 25°C 1.0E-03 1.0E-04 25°C 20 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 125°C 1.0E-02 2 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO8801A 20V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4.5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 TJ(Max)=150°C TA=25°C 10.0 RDS(ON) limited 100µs 1ms 1.0 10ms 20 10 100ms DC 0.1 Power (W) 10µs -ID (Amps) 20 10s TJ(Max)=150°C TA=25°C 0 0.0 0.001 0.01 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=130°C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO8801A 20V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig 5/5 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.freescale.net.cn