elm13421ca

Single P-channel MOSFET
ELM13421CA-S
■General description
■Features
ELM13421CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-2.6A (Vgs=-10V)
Rds(on) < 130mΩ (Vgs=-10V)
Rds(on) < 200mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-2.6
-2.2
-20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
1.4
1.0
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
70
100
63
90
125
80
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SOT-23(TOP VIEW)
3
Note
D
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM13421CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vgs=-10V
Rds(on) Id=-2.6A
Ta=125°C
Vgs=-4.5V, Id=-2A
Gfs Vds=-5V, Id=-2.5A
Vsd
-1
-5
μA
±100
nA
Is=-1A, Vgs=0V
-1.4
-5
-1.9
-3.0
V
A
97
130
135
166
3.8
150
200
3.0
-0.82
-1.00
V
-2
A
370.0
pF
pF
Is
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
-30
Vgs=0V, Vds=-15V, f=1MHz
302.0
50.3
Vgs=0V, Vds=0V, f=1MHz
37.8
12
Vgs=-10V, Vds=-15V
Id=-2.6A
6.80
2.40
1.60
Vgs=-10V, Vds=-15V
td(off) RL=5.8Ω, Rgen=3Ω
tf
trr
If=-2.6A, dIf/dt=100A/μs
Qrr
NOTE :
mΩ
S
18
9.00
pF
Ω
nC
nC
nC
0.95
7.5
nC
ns
3.2
ns
17.0
6.8
16.8
ns
ns
ns
10.0
22.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM13421CA-S
■Typical electrical and thermal characteristics
10
20
-8V
Vds=-5V
8
15
-6V
10
-5.5V
-5V
25°C
-Id (A)
-Id (A)
-10V
Vgs=-4.5V
-4V
-3.5V
5
0
1
2
3
125°C
4
2
-3.0V
0
6
0
4
5
1
2
5
6
1.6
Normalized On-Resistance
Rds(on) (m� )
4
370
250
200
150
Vgs=-4.5V
100
Vgs=-10V
50
0
1
2
3
4
5
9
Vgs=-4.5V
1.2
Id=-2A
1
0.8
6
0
1.0E+01
250
1.0E+00
Id=-2A
50
75
100
125
22
150
175
1.0E-01
-Is (A)
125°C
150
100
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
300
200
18
Vgs=-10V
1.4
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Rds(on) (m� )
3
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
25°C
1.0E-02
125°C
1.0E-03
25°C
1.0E-04
50
1.0E-05
1.0E-06
0
3
4
5
6
7
8
9
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM13421CA-S
10
9
8
400
7
Capacitance (pF)
-Vgs (Volts)
500
Vds=-15V
Id=-2.6A
6
5
4
3
2
Ciss
300
200
Coss
100
1
0
0
1
2
3
4
5
6
Crss
0
7
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
20
Rds(on)
limited
100�s
10ms
10s
0.1
DC
1
10
100
10
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
22
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
Z�ja Normalized Transient
Thermal Resistance
30
9
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
25
5
1s
0.1
20
Tj(max)=150°C
18
Ta=25°C
15
10�s
1ms
0.1s
1.0
15
370
Tj(max)=150°C
Ta=25°C
10.0
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000