Single N-channel MOSFET ELM17402FA-S ■General description ■Features ELM17402FA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V. • • • • • Vds=20V Id=1.6A (Vgs=4.5V) Rds(on) < 90mΩ (Vgs=4.5V) Rds(on) < 105mΩ (Vgs=2.5V) Rds(on) < 130mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Ta=25°C Ta=70°C Power dissipation Symbol Limit Unit Vds Vgs 20 ±8 V V Id 1.6 1.2 A 1 Idm 10 A 2 W 1 Pd Junction and storage temperature range Tj, Tstg 0.35 0.22 -55 to 150 Note °C ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 300 340 280 360 425 320 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SC-70(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4- 1 Single N-channel MOSFET ELM17402FA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Min. Typ. Ta=25°C Max. Unit 20 V 1 Tj=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V 5 100 nA 0.55 0.80 75 90 Vgs=2.5V, Id=1.5A Vgs=1.8V, Id=1.4A Vds=5V, Id=1.6A 106 86 103 5.5 130 105 130 Is=1A, Vgs=0V 0.69 1.00 0.5 Ciss Coss Crss Vgs=0V, Vds=10V, f=1MHz 458 76 54 pF pF pF Gate resistance SWITCHING PARAMETERS Rg Vgs=0V, Vds=0V, f=1MHz 3 Ω Total gate charge Qg 6.05 nC Gate-source charge Gate-drain charge Qgs Qgd 0.70 1.45 nC nC 7.3 5.6 40.0 ns ns ns 11.0 ns 12.20 3.23 ns nC Vgs=4.5V, Id=1.6A Static drain-source on-resistance Rds(on) Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current Vsd Is 0.40 10 μA Tj=125°C V A mΩ S V A DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=4.5V, Vds=10V, Id=1.6A td(on) tr Vgs=5V, Vds=10V td(off) Rl=6.25Ω, Rgen=6Ω tf trr Qrr If=1.6A, dl/dt=100A/μs If=1.6A, dl/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4- 2 Single N-channel MOSFET ELM17402FA-S ■Typical electrical and thermal characteristics 16 10 8V VDS=5V 4.5V 12 3V 2.5V 8 6 4 4 VGS=1.5V 2 0 0 0 1 2 3 4 5 0 0.5 140 1.5 2 2.5 3 Normalized On-Resistance 1.6 VGS=1.8V 120 RDS(ON) (m� ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=2.5V 100 80 VGS=4.5V 60 0 2 4 6 VGS=2.5V VGS=1.8V 1.4 ID=1.6A VGS=4.5V 1.2 1 0.8 8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 1E+00 140 125°C ID=1.6A 1E-01 120 IS (A) RDS(ON) (m� ) 125°C 2V ID(A) ID (A) 25°C 8 125°C 100 25°C 1E-03 25°C 80 1E-02 1E-04 1E-05 60 1 2 3 4 5 6 7 0.0 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4- 3 1.4 Single N-channel MOSFET ELM17402FA-S 800 5 VGS (Volts) Capacitance (pF) VDS=10V ID=1.6A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 TJ(Max)=150°C TA=25°C 10�s 10ms 1ms 0.1s 10s 0.1 DC 1 8 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.Z�JA.R�JA R�JA=360°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 4 1s 0.1 15 TJ(Max)=150°C TA=25°C 12 RDS(ON) limited 1.0 Z� JA Normalized Transient Thermal Resistance 10 16 100�s Power (W) 100.0 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4- 4 100 1000