ELM-TECH ELM17402FA-S

Single N-channel MOSFET
ELM17402FA-S
■General description
■Features
ELM17402FA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and operation
with gate voltages as low as 1.8V.
•
•
•
•
•
Vds=20V
Id=1.6A (Vgs=4.5V)
Rds(on) < 90mΩ (Vgs=4.5V)
Rds(on) < 105mΩ (Vgs=2.5V)
Rds(on) < 130mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Ta=25°C
Ta=70°C
Power dissipation
Symbol
Limit
Unit
Vds
Vgs
20
±8
V
V
Id
1.6
1.2
A
1
Idm
10
A
2
W
1
Pd
Junction and storage temperature range
Tj, Tstg
0.35
0.22
-55 to 150
Note
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
300
340
280
360
425
320
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SC-70(TOP VIEW)
3
Note
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
4- 1
Single N-channel MOSFET
ELM17402FA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±8V
Gate threshold voltage
On state drain current
Min.
Typ.
Ta=25°C
Max. Unit
20
V
1
Tj=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
5
100
nA
0.55
0.80
75
90
Vgs=2.5V, Id=1.5A
Vgs=1.8V, Id=1.4A
Vds=5V, Id=1.6A
106
86
103
5.5
130
105
130
Is=1A, Vgs=0V
0.69
1.00
0.5
Ciss
Coss
Crss
Vgs=0V, Vds=10V, f=1MHz
458
76
54
pF
pF
pF
Gate resistance
SWITCHING PARAMETERS
Rg
Vgs=0V, Vds=0V, f=1MHz
3
Ω
Total gate charge
Qg
6.05
nC
Gate-source charge
Gate-drain charge
Qgs
Qgd
0.70
1.45
nC
nC
7.3
5.6
40.0
ns
ns
ns
11.0
ns
12.20
3.23
ns
nC
Vgs=4.5V, Id=1.6A
Static drain-source on-resistance
Rds(on)
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
Vsd
Is
0.40
10
μA
Tj=125°C
V
A
mΩ
S
V
A
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vgs=4.5V, Vds=10V, Id=1.6A
td(on)
tr
Vgs=5V, Vds=10V
td(off) Rl=6.25Ω, Rgen=6Ω
tf
trr
Qrr
If=1.6A, dl/dt=100A/μs
If=1.6A, dl/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4- 2
Single N-channel MOSFET
ELM17402FA-S
■Typical electrical and thermal characteristics
16
10
8V
VDS=5V
4.5V
12
3V
2.5V
8
6
4
4
VGS=1.5V
2
0
0
0
1
2
3
4
5
0
0.5
140
1.5
2
2.5
3
Normalized On-Resistance
1.6
VGS=1.8V
120
RDS(ON) (m� )
1
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=2.5V
100
80
VGS=4.5V
60
0
2
4
6
VGS=2.5V
VGS=1.8V
1.4
ID=1.6A
VGS=4.5V
1.2
1
0.8
8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
1E+00
140
125°C
ID=1.6A
1E-01
120
IS (A)
RDS(ON) (m� )
125°C
2V
ID(A)
ID (A)
25°C
8
125°C
100
25°C
1E-03
25°C
80
1E-02
1E-04
1E-05
60
1
2
3
4
5
6
7
0.0
8
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4- 3
1.4
Single N-channel MOSFET
ELM17402FA-S
800
5
VGS (Volts)
Capacitance (pF)
VDS=10V
ID=1.6A
4
3
2
1
600
Ciss
400
Coss
200
0
0
0
2
4
6
0
8
10.0
TJ(Max)=150°C
TA=25°C
10�s
10ms 1ms
0.1s
10s
0.1
DC
1
8
10
0
0.001
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
D=Ton/T
TJ,PK=TA+PDM.Z�JA.R�JA
R�JA=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
VDS (Volts)
10
20
4
1s
0.1
15
TJ(Max)=150°C
TA=25°C
12
RDS(ON)
limited
1.0
Z� JA Normalized Transient
Thermal Resistance
10
16
100�s
Power (W)
100.0
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
ID (Amps)
Crss
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4- 4
100
1000