Single P-channel MOSFET ELM13409CA-S ■General description ■Features ELM13409CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-2.6A (Vgs=-10V) Rds(on) < 130mΩ (Vgs=-10V) Rds(on) < 200mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±20 V Symbol Vds Vgs Ta=25°C Ta=70°C Continuous drain current -2.6 -2.2 -20 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 1.4 1.0 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 70 100 63 90 125 80 °C/W °C/W °C/W 1 2 1 3 ■Circuit SOT-23(TOP VIEW) 3 Note D Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 4-1 Single P-channel MOSFET ELM13409CA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vgs=-10V Rds(on) Id=-2.6A Ta=125°C Vgs=-4.5V, Id=-2A Gfs Vds=-5V, Id=-2.5A Vsd -1 -5 μA ±100 nA Is=-1A, Vgs=0V -1.0 -5 -1.9 -3.0 V A 97 130 135 166 3.8 150 200 3.0 -0.82 -1.00 V -2 A 370.0 pF pF Is Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Qg Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Input capacitance Output capacitance Total gate charge (4.5V) Gate-source charge -30 Vgs=0V, Vds=-15V, f=1MHz 302.0 50.3 Vgs=0V, Vds=0V, f=1MHz 37.8 12 Vgs=-10V, Vds=-15V Id=-2.6A 6.80 2.40 1.60 Vgs=-10V, Vds=-15V td(off) RL=5.8Ω, Rgen=3Ω tf trr If=-2.6A, dIf/dt=100A/μs Qrr NOTE : 18 9.00 mΩ mΩ S pF Ω nC nC nC 0.95 7.5 nC ns 3.2 ns 17.0 6.8 16.8 ns ns ns 10.0 22.0 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM13409CA-S ■Typical electrical and thermal characteristics 10 20 -8V Vds=-5V 8 15 -6V 10 -5.5V -5V 25°C -Id (A) -Id (A) -10V Vgs=-4.5V -4V 5 -3.0V 0 1 2 3 4 125°C 4 2 -3.5V 0 6 0 5 1 2 5 6 370 250 1.6 Normalized On-Resistance Rds(on) (m� ) 4 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics 200 150 Vgs=-4.5V 100 Vgs=-10V 50 18 Vgs=-10V 1.4 9 Vgs=-4.5V 1.2 Id=-2A 1 0.8 0 1 2 3 4 5 6 0 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 1.0E+01 250 1.0E+00 200 75 100 125 22 150 175 1.0E-01 -Is (A) 125°C 150 100 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature Id=-2A Rds(on) (m� ) 3 25°C 1.0E-02 125°C 1.0E-03 25°C 1.0E-04 50 1.0E-05 1.0E-06 0 3 4 5 6 7 8 9 0.0 10 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single P-channel MOSFET ELM13409CA-S 10 500 Vds=-15V Id=-2.6A 9 8 400 Capacitance (pF) -Vgs (Volts) 7 6 5 4 3 2 Ciss 300 200 Coss 100 1 0 0 1 2 3 4 5 6 Crss 0 7 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 Rds(on) limited 100�s 10ms 10s 0.1 1 DC Z�ja Normalized Transient Thermal Resistance 30 Tj(max)=150°C 18 Ta=25°C 9 10 -Vds (Volts) 10 0 0.001 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 22 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 25 5 1s 0.1 20 15 10�s 1ms 0.1s 1.0 15 370 Tj(max)=150°C Ta=25°C 10.0 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000