Single N-channel MOSFET ELM13406CA-S ■General description ■Features ELM13406CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=30V Id=3.6A (Vgs=10V) Rds(on) < 65mΩ (Vgs=10V) Rds(on) < 105mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±20 V Ta=25°C Continuous drain current 3.6 Id Ta=70°C Pulsed drain current 2.9 15 1.4 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 0.9 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 70 100 63 90 125 80 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. Pin name 1 2 3 GATE SOURCE DRAIN G S 4-1 Single N-channel MOSFET ELM13406CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 1.9 3.0 V A 50 65 74 100 75 7 105 mΩ S Is=1A 0.79 1.00 2.5 V A 375 Vgs=0V, Vds=15V, f=1MHz 288 57 pF pF Vgs=0V, Vds=0V, f=1MHz 39 3 6 pF Ω 6.5 8.5 nC 3.1 4.0 nC Vds=24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±20V Forward transconductance Gfs Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 30 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=10V, Id=3.6A Ta=125°C Vgs=4.5V, Id=2.8A Vds=5V, Id=3.6A Qg Vgs=10V, Vds=15V, Id=3.6A 1.0 15 mΩ 1.2 1.6 nC nC td(on) 4.6 ns tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω 1.9 20.1 ns ns 2.6 10.2 3.5 ns ns nC tf trr Qrr If=3.6A, dIf/dt=100A/μs If=3.6A, dIf/dt=100A/μs NOTE : 14.0 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM13406CA-S ■Typical electrical and thermal characteristics 15 10 10V 4.5V 6V 8 4V 9 Id(A) Id (A) 12 3.5V 6 Vds=5V 6 4 125°C Vgs=3V 3 2 25°C 0 0 0 1 2 3 4 5 1.5 2 3 100 4 4.5 5 1.8 Normalized On-Resistance 90 Vgs=4.5V 80 70 60 50 Vgs=10V 40 Id=3.6A 1.6 Vgs=4.5V Vgs=10V 1.4 1.2 1 0.8 0 2 4 6 8 10 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 Id=3.6A 1.0E+00 125° 150 1.0E-01 100 Is (A) Rds(on) (m� ) 3.5 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics Rds(on) (m� ) 2.5 125°C 1.0E-02 25° 1.0E-03 50 25°C 1.0E-04 1.0E-05 0 2 4 6 8 0.0 10 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.2 Single N-channel MOSFET ELM13406CA-S 10 Ciss Capacitance (pF) 8 Vgs (Volts) 400 Vds=15V Id=3.6A 6 4 2 300 200 Coss 0 0 1 2 3 4 5 6 0 7 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 0.1s 10ms 25 30 Tj(max)=150°C Ta=25°C 5 10s DC 0.1 1 10 0 0.001 100 Vds (Volts) D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 20 10 1s 10 15 15 10�s 100�s Power (W) Id (Amps) Rds(on) limited 0.1 10 20 Tj(max)=150°C Ta=25°C 1.0 5 Vds (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 Crss 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000