elm13406ca

Single N-channel MOSFET
ELM13406CA-S
■General description
■Features
ELM13406CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=30V
Id=3.6A (Vgs=10V)
Rds(on) < 65mΩ (Vgs=10V)
Rds(on) < 105mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
30
V
Gate-source voltage
Vgs
±20
V
Ta=25°C
Continuous drain current
3.6
Id
Ta=70°C
Pulsed drain current
2.9
15
1.4
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
0.9
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
70
100
63
90
125
80
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
D
SOT-23(TOP VIEW)
3
Note
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
S
4-1
Single N-channel MOSFET
ELM13406CA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
100
nA
1.9
3.0
V
A
50
65
74
100
75
7
105
mΩ
S
Is=1A
0.79
1.00
2.5
V
A
375
Vgs=0V, Vds=15V, f=1MHz
288
57
pF
pF
Vgs=0V, Vds=0V, f=1MHz
39
3
6
pF
Ω
6.5
8.5
nC
3.1
4.0
nC
Vds=24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Forward transconductance
Gfs
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs
Qgd
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Ta=55°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Rds(on)
V
μA
Idss
Static drain-source on-resistance
30
1
5
Zero gate voltage drain current
Gate threshold voltage
On state drain current
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Vgs=10V, Id=3.6A
Ta=125°C
Vgs=4.5V, Id=2.8A
Vds=5V, Id=3.6A
Qg
Vgs=10V, Vds=15V, Id=3.6A
1.0
15
mΩ
1.2
1.6
nC
nC
td(on)
4.6
ns
tr
Vgs=10V, Vds=15V
td(off) RL=2.2Ω, Rgen=3Ω
1.9
20.1
ns
ns
2.6
10.2
3.5
ns
ns
nC
tf
trr
Qrr
If=3.6A, dIf/dt=100A/μs
If=3.6A, dIf/dt=100A/μs
NOTE :
14.0
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single N-channel MOSFET
ELM13406CA-S
■Typical electrical and thermal characteristics
15
10
10V
4.5V
6V
8
4V
9
Id(A)
Id (A)
12
3.5V
6
Vds=5V
6
4
125°C
Vgs=3V
3
2
25°C
0
0
0
1
2
3
4
5
1.5
2
3
100
4
4.5
5
1.8
Normalized On-Resistance
90
Vgs=4.5V
80
70
60
50
Vgs=10V
40
Id=3.6A
1.6
Vgs=4.5V
Vgs=10V
1.4
1.2
1
0.8
0
2
4
6
8
10
0
Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
200
Id=3.6A
1.0E+00
125°
150
1.0E-01
100
Is (A)
Rds(on) (m� )
3.5
Vgs(Volts)
Figure 2: Transfer Characteristics
Vds (Volts)
Fig 1: On-Region Characteristics
Rds(on) (m� )
2.5
125°C
1.0E-02
25°
1.0E-03
50
25°C
1.0E-04
1.0E-05
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
Vsd (Volts)
Figure 6: Body-Diode Characteristics
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single N-channel MOSFET
ELM13406CA-S
10
Ciss
Capacitance (pF)
8
Vgs (Volts)
400
Vds=15V
Id=3.6A
6
4
2
300
200
Coss
0
0
1
2
3
4
5
6
0
7
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
0.1s 10ms
25
30
Tj(max)=150°C
Ta=25°C
5
10s
DC
0.1
1
10
0
0.001
100
Vds (Volts)
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
10
1s
10
15
15
10�s
100�s
Power (W)
Id (Amps)
Rds(on)
limited
0.1
10
20
Tj(max)=150°C
Ta=25°C
1.0
5
Vds (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
Crss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000