Single N-channel MOSFET ELM13414CA-S ■General description ■Features ELM13414CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V. • • • • • Vds=20V Id=4.2A (Vgs=4.5V) Rds(on) < 50mΩ (Vgs=4.5V) Rds(on) < 63mΩ (Vgs=2.5V) Rds(on) < 87mΩ (Vgs=1.8V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Vds Vgs 20 ±8 V V Id 4.2 3.2 A 1 Idm 15 A 2 Pd 1.4 0.9 W 1 Tj, Tstg -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Maximum junction-to-lead Symbol t≤10s Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. Unit 70 100 63 90 125 80 °C/W °C/W °C/W 1 2 1 3 ■Circuit D SOT-23(TOP VIEW) 3 Note Pin No. 1 Pin name GATE 2 3 SOURCE DRAIN G S 4-1 Single N-channel MOSFET ELM13414CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Rds(on) Gfs Vsd 1 5 μA 100 nA 0.6 1.0 V A 41 50 58 70 52 67 63 87 mΩ mΩ 1.00 S V 2 A Ta=55°C Ta=125°C Vgs=2.5V, Id=3.7A Vgs=1.8V, Id=3.2A Vds=5V, Id=4.2A Is=1A, Vgs=0V Ciss 0.4 15 11 0.76 mΩ 436 pF 66 44 3 pF pF Ω 6.2 nC 1.6 0.5 nC nC td(on) 5.5 ns tr Vgs=5V, Vds=10V td(off) RL=2.7Ω, Rgen=6Ω 6.3 40.0 ns ns 12.7 12.3 3.5 ns ns nC Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge V Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time 20 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Vgs=4.5V, Id=4.2A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Vgs=0V, Vds=10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg tf trr Qrr Vgs=4.5V, Vds=10V, Id=4.2A If=4A, dIf/dt=100A/μs If=4A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM13414CA-S ■Typical electrical and thermal characteristics 16 10 8V Vds=5V 4.5V 8 2V 3V 2.5V 8 6 Id(A) Id (A) 12 4 4 Vgs=1.5V 125°C 2 25°C 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 1.8 Normalized On-Resistance Rds(on) (m� ) 100 Vgs=1.8V 80 Vgs=2.5V 60 40 Vgs=4.5V 20 Vgs=2.5V 1.6 Vgs=1.8V 1.4 Id=4.2A Vgs=4.5V 1.2 1 0.8 0 4 8 12 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1E+01 90 1E+00 Id=4.2A 80 125°C 1E-01 70 Is (A) Rds(on) (m� ) 1 Vgs(Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 125°C 60 50 25°C 1E-03 25°C 40 1E-02 1E-04 30 1E-05 20 0 2 4 6 0.0 8 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4-3 1.0 Single N-channel MOSFET ELM13414CA-S 800 5 Vgs (Volts) Capacitance (pF) Vds=10V Id=4.2A 4 3 2 1 600 Ciss 400 Coss 200 0 0 0 2 4 6 0 8 10.0 15 20 Tj(max)=150°C Ta=25°C 100�s 15 Rds(on) limited 1.0 10�s 1ms 0.1s 10ms DC 0.1 0.1 1 Vds (Volts) 10 0 0.001 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 10 5 1s 10s Z� Jja Normalized Transient Thermal Resistance 10 20 Tj(max)=150°C Ta=25°C Power (W) 100.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000