Single P-channel MOSFET ELM33411CA-S ■General description ■Features ELM33411CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3A Rds(on) < 100mΩ (Vgs=-4.5V) Rds(on) < 140mΩ (Vgs=-2.5V) Rds(on) < 240mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -20 V Symbol Vds Gate-source voltage Vgs ±12 -3.0 -2.4 V Idm -10 A Pd 1.00 0.64 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Id A 3 ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 125 ■Circuit SOT-23(TOP VIEW) 3 1 Unit °C/W 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 5-1 Note Single P-channel MOSFET ELM33411CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Condition -20 V Vds=-16V, Vgs=0V -1 Vds=-16V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±12V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-4.5V, Id=-3A Static drain-source on-resistance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Rds(on) Vgs=-2.5V, Id=-2.5A Forward transconductance Gfs Vgs=-1.8V, Id=-1A Vds=-5V, Id=-3A Diode forward voltage Vsd If=-1A, Vgs=0V -0.7 -10 -0.8 ±100 nA -1.2 V A 1 mΩ 1 S 1 -1.2 V 1 -1.6 A 84 100 116 140 185 7 240 Is μA Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ciss 540 pF Output capacitance Reverse transfer capacitance Coss Vgs=0V, Vds=-10V, f=1MHz Crss 75 50 pF pF 4.5 Ω 6.2 nC 2 0.6 1.6 nC nC 2 2 11 15 ns 2 ns 2 50 24 ns ns 2 2 Gate resistance SWITCHING PARAMETERS Total gate charge Rg Qg Gate-source charge Gate-drain charge Qgs Qgd Turn-on delay time Turn-on rise time td(on) Turn-off delay time Turn-off fall time td(off) Id=-1A, Rgen=6Ω tf tr Vgs=15mV, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-3A Vgs=-4.5V, Vds=-10V NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 5-2 Single P-channel MOSFET ELM33411CA-S ■Typical electrical and thermal characteristics 5 - 3 Single P-channel MOSFET ELM33411CA-S 5 - 4 Single P-channel MOSFET ELM33411CA-S 5-5