Single N-channel MOSFET ELM33416CA-S ■General description ■Features ELM33416CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=100V Id=1.3A Rds(on) < 230mΩ (Vgs=10V) Rds(on) < 240mΩ (Vgs=5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Avalanche current Avalanche energy Symbol Vds Vgs Ta=25°C Ta=100°C L=0.1mH Tc=25°C Tc=100°C Power dissipation Ta=25°C. Unless otherwise noted. Limit Unit Note 100 V ±20 V Junction and storage temperature range 1.3 Id A 0.8 Idm Ias 18 18 A A Eas 16.5 0.75 0.30 mJ -55 to 150 °C Pd Tj, Tstg 3 W ■Thermal characteristics Parameter Symbol Maximum junction-to-ambient Rθja ■Pin configuration Typ. Max. Unit 166 °C/W ■Circuit D SOT-23(TOP VIEW) 3 1 2 Note Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Single N-channel MOSFET ELM33416CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=80V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS 1.0 18 1.5 Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Qrr nA 2.0 V A 1 mΩ 1 1.4 S V 1 1 10 A 220 230 Vgs=5V, Id=1A 230 240 Vds=10V, Id=2A If=2A, Vgs=0V 10 Vgs=0V, Vds=25V, f=1MHz 802 80 pF pF Vgs=0V, Vds=0V, f=1MHz 41 2.5 pF Ω Vgs=10V, Vds=50V, Id=2A 15 2 nC nC 2 2 4 16 nC ns 2 2 330 ns 2 39 ns 2 111 75 ns ns 2 0.17 nC Vgs=10V, Vds=50V, Id=2A td(off) Rgen=6Ω tf trr μA ±100 Vgs=10V, Id=2A Is Input capacitance Output capacitance Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=10V Gfs Vsd 100 Vds=80V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note If=2A, dIf/dt=500A/μs NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Single N-channel MOSFET ELM33416CA-S ■Typical electrical and thermal characteristics � � � 4-3 Single N-channel MOSFET ELM33416CA-S � � � � � � � � � � 4-4