JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL6602 P-channel and N-channel Complementary MOSFETS P-channel V(BR)DSS SOT-23-6L ID RDS(on)MAX 135 mΩ@-10V -2.3A 185mΩ@-4.5V -30V 265mΩ@-2.5V N-channel V(BR)DSS ID RDS(on)MAX 60mΩ@10V 3.4A 75mΩ@4.5V 30V 115mΩ@2.5V GENERAL DESCRIPTION The CJL6602 uses advanced trench technology to provide excellent RDS(on) and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. Equivalent Circuit MARKING L6602 Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage (1) Continuous Drain Current Pulsed Drain Current (2) Value Symbol Unit N-channel P-channel VDS 30 -30 V VGS ±12 ±12 V ID 3.4 -2.3 A IDM 30 -30 A PD 0.35 0.35 W RθJA 357 357 ℃/W Junction Temperature TJ 150 150 ℃ Storage Temperature Tstg -55~+150 -55~+150 ℃ Power Dissipation Thermal Resistance from Junction to Ambient(1) 2 1.The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on t≤10s thermal rasistance rating. 2. Repetitive rating,pulse with limited by junction temperature. www.cj-elec.com 1 A,Oct,2015 MOSFET ELECTRICAL CHARACTERISTICS N-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current (note1) IGSS VGS =±12V, VDS = 0V Drain-source on-resistance (note1) Forward tranconductance (note1) Gate threshold voltage Diode forward voltage (note1) 30 V 1 µA ±100 nA VGS =10V, ID =3A 45 60 mΩ RDS(on) VGS =4.5V, ID =3A 50 75 mΩ VGS =2.5V, ID =2A 60 115 mΩ 1.4 V 1 V gFS VGS(th) VSD VDS =5V, ID =3A VDS =VGS, ID =250µA 5 S 0.6 IS=1A,VGS=0V Dynamic characteristics (note2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VGS =0V,VDS =15V ,f =1MHz VGS =0V,VDS =0V,f =1MHz 390 pF 54.5 pF 41 pF 3 Ω 4 ns Switching Characteristics(note2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr td(off) VGS=10V,VDS=15V, 2 ns RL=5Ω,RGEN=6Ω 22 ns 3 ns tf P-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA Zero gate voltage drain current IDSS VDS =-24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V Drain-source on-resistance (note1) RDS(on) -30 -1 Gate threshold voltage Diode forward voltage (note1) gFS VGS(th) VDS µA ±100 nA VGS =-10V, ID =-2.3A 75 135 mΩ VGS =-4.5V, ID =-2A 95 185 mΩ 140 265 mΩ VGS =-2.5V, ID =-1A Forward tranconductance (note1) V VDS =-5V, ID =-2.3A 4.5 VDS =VGS, ID =-250µA -0.6 S IS=-1A,VGS=0V -1.4 V -1 V Dynamic characteristics (note2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg 409 pF 55 pF 42 pF 12 Ω 13 ns VGS=-10V,VDS=-15V, 10 ns RL=6Ω,RGEN=6Ω 28 ns 13 ns VGS =0V,VDS =-15V,f =1MHz VGS =0V,VDS =0V,f =1MHz Switching Characteristics (note2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Notes : td(on) tr td(off) tf 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 A,Oct,2015 7\SLFDO&KDUDFWHULVWLFV N-Channel-MOS Output Characteristics Transfer Characteristics 14 14 Ta=25℃ VDS=3V VGS=3V,4V,5V,6V Pulsed Ta=25℃ 10 8 DRAIN CURRENT ID (A) 10 ID DRAIN CURRENT Pulsed 12 (A) 12 VGS=2V 6 4 VGS=1.8V 2 0 8 Ta=100℃ 6 4 2 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE VDS 0 0.0 5 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE VGS 2.5 3.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 70 160 Ta=25℃ Pulsed Pulsed (m) 60 50 ON-RESISTANCE ON-RESISTANCE 120 RDS(ON) VGS=2.5V RDS(ON) (m) ID=3A VGS=4.5V 40 Ta=100℃ 80 40 Ta=25℃ VGS=10V 30 1 2 3 DRAIN CURRENT ID 0 4 0 (A) 2 4 6 GATE TO SOURCE VOLTAGE 8 VGS 10 (V) Threshold Voltage IS —— VSD 4 1.5 (V) Pulsed VTH Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 1 Ta=25℃ 0.1 0.01 0.0 0.4 0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.0 0.5 0.0 25 1.2 VSD (V) ID=250uA 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 ( ℃) A,Oct,2015 7\SLFDO&KDUDFWHULVWLFV P-Channel-MOS Output Characteristics Transfer Characteristics -14 -14 VGS=-4V,-5V,-6V Ta=25℃ Pulsed -12 -10 Ta=25℃ ID (A) VGS=-3V -10 -8 DRAIN CURRENT ID (A) -12 DRAIN CURRENT VDS=-3V Pulsed VGS=-2.5V -6 -4 -2 -0 -1 -2 -3 DRAIN TO SOURCE VOLTAGE -4 VDS Ta=100℃ -6 -4 -2 VGS=-2V -0 -8 -0 -5 -0 (V) -1 -2 -3 GATE TO SOURCE VOLTAGE -4 VGS -5 (V) RDS(ON) —— VGS RDS(ON) —— ID 200 300 Ta=25℃ Pulsed Pulsed (m) RDS(ON) 100 VGS=-4.5V ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) ID=-2.3A VGS=-2.5V 150 VGS=-10V 50 0 -0.5 -1.0 -1.5 -2.0 -2.5 DRAIN CURRENT -3.0 ID -3.5 200 Ta=100℃ 100 Ta=25℃ 0 -4.0 -0 (A) -2 -4 -6 GATE TO SOURCE VOLTAGE -8 VGS -10 (V) Threshold Voltage IS —— VSD -1.6 -4 VTH Ta=100℃ THRESHOLD VOLTAGE -1 SOURCE CURRENT IS (A) (V) Pulsed Ta=25℃ -1.2 ID=-250uA -0.8 -0.4 -0.1 -0.0 -0.4 -0.8 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -1.2 25 -1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 4 100 Tj 125 ( ℃) A,Oct,2015 SOT-23-6L Package Outline Dimensions Symbol A A1 A2 b c D E1 E e e1 L θ Dimensions In Millimeters Max. Min. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° SOT-23-6L Suggested Pad Layout www.cj-elec.com 5 A,Oct,2015 SOT-23-6L Tape and Reel www.cj-elec.com 6 A,Oct,2015