Single P-channel MOSFET ELM16401EA-S ■General description ■Features ELM16401EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=-30V Id=-5A (Vgs=-10V) Rds(on) < 49mΩ (Vgs=-10V) Rds(on) < 64mΩ (Vgs=-4.5V) Rds(on) < 119mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V Symbol Vds Vgs Ta=25°C Continuous drain current -5.0 Id Ta=70°C Pulsed drain current -4.2 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg -30 2.00 1.44 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja 47.5 74.0 62.5 110.0 °C/W °C/W 1 Maximum junction-to-lead Steady-state Rθjl 37.0 50.0 °C/W 3 ■Pin configuration ■Circuit SOT-26(TOP VIEW) 6 1 5 2 4 3 D Pin No. Pin name 1 2 3 DRAIN DRAIN GATE 4 5 6 SOURCE DRAIN DRAIN 4-1 G S Single P-channel MOSFET ELM16401EA-S ■Electrical characteristics Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-24V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Gate threshold voltage On state drain current Rds(on) Gfs Vds=-5V, Id=-5A Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Vsd Is Is=-1A, Vgs=0V Input capacitance Ciss Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Coss Crss Rg Gate-source charge Qg Qgs Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vgs=0V, Vds=-15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-15V Id=-5A Vgs=-10V, Vds=-15V If=-5A, dIf/dt=100A/μs NOTE : -1 -5 μA ±100 nA -1.0 -1.3 V A 42 49 53 81 74 64 119 Ta=125°C td(off) RL=3Ω, Rgen=6Ω tf trr If=-5A, dIf/dt=100A/μs Qrr -0.7 -25 Vgs=-4.5V, Id=-4A Vgs=-2.5V, Id=-1A Forward transconductance V Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Vgs=-10V, Id=-5A Static drain-source on-resistance -30 7 11 -0.75 mΩ mΩ mΩ S -1.00 -3 V A 943 pF 108 73 6 pF pF Ω 9.5 2.1 nC nC 2.9 6 nC ns 3 ns 40 11 21.2 ns ns ns 12.8 nC 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single P-channel MOSFET ELM16401EA-S ■Typical electrical and thermal characteristics 10 25 Vds=-5V -10V 20 -4.5V 8 15 -Id (A) -Id (A) -3V -2.5V 10 2 0 0 0 1 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 5 0 120 1 1.5 2 2.5 -Vgs (Volts) Figure 2: Transfer Characteristics Normalized On-Resistance 80 1.2 60 Vgs=-4.5V 40 Vgs=-10V 3 Id=-5A Vgs=-4.5V Vgs=-10V 1.4 Vgs=-2.5V Vgs=-2.5V Id=-2A 1 0.8 20 0 2 4 6 8 0 10 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 Id=-2A 1.0E-01 130 125°C 1.0E-02 110 90 -Is (A) Rds(on) (m� ) 0.5 1.6 100 Rds(on) (m� ) 125°C 4 25°C Vgs=-2V 5 6 125°C 70 1.0E-03 25°C 50 25°C 1.0E-04 . 1.0E-05 30 10 0 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics 4-3 1.2 Single P-channel MOSFET ELM16401EA-S 5 1200 Capacitance (pF) 4 -Vgs (Volts) 1400 Vds=-15V Id=-5A 3 2 1 1000 600 400 Coss Crss 200 0 2 6 8 10 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10.0 4 Tj(max)=150°C Ta=25°C 0 10ms 30 Tj(max)=150°C Ta=25°C 20 10 1s 10s DC 0.1 Z�ja Normalized Transient Thermal Resistance 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 30 100�s 0.1s 1 10 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 10 10�s 1ms 0.1 5 40 Rds(on) limited 1.0 0 12 Power (W) 0 -Id (Amps) Ciss 800 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000