elm16401ea

Single P-channel MOSFET
ELM16401EA-S
■General description
■Features
ELM16401EA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 49mΩ (Vgs=-10V)
Rds(on) < 64mΩ (Vgs=-4.5V)
Rds(on) < 119mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
-5.0
Id
Ta=70°C
Pulsed drain current
-4.2
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
-30
2.00
1.44
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤10s
Steady-state
Rθja
47.5
74.0
62.5
110.0
°C/W
°C/W
1
Maximum junction-to-lead
Steady-state
Rθjl
37.0
50.0
°C/W
3
■Pin configuration
■Circuit
SOT-26(TOP VIEW)
6
1
5
2
4
3
D
Pin No.
Pin name
1
2
3
DRAIN
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4-1
G
S
Single P-channel MOSFET
ELM16401EA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Rds(on)
Gfs
Vds=-5V, Id=-5A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-5A
Vgs=-10V, Vds=-15V
If=-5A, dIf/dt=100A/μs
NOTE :
-1
-5
μA
±100
nA
-1.0
-1.3
V
A
42
49
53
81
74
64
119
Ta=125°C
td(off) RL=3Ω, Rgen=6Ω
tf
trr
If=-5A, dIf/dt=100A/μs
Qrr
-0.7
-25
Vgs=-4.5V, Id=-4A
Vgs=-2.5V, Id=-1A
Forward transconductance
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-10V, Id=-5A
Static drain-source on-resistance
-30
7
11
-0.75
mΩ
mΩ
mΩ
S
-1.00
-3
V
A
943
pF
108
73
6
pF
pF
Ω
9.5
2.1
nC
nC
2.9
6
nC
ns
3
ns
40
11
21.2
ns
ns
ns
12.8
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM16401EA-S
■Typical electrical and thermal characteristics
10
25
Vds=-5V
-10V
20
-4.5V
8
15
-Id (A)
-Id (A)
-3V
-2.5V
10
2
0
0
0
1
2
3
4
-Vds (Volts)
Fig 1: On-Region Characteristics
5
0
120
1
1.5
2
2.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
Normalized On-Resistance
80
1.2
60
Vgs=-4.5V
40
Vgs=-10V
3
Id=-5A
Vgs=-4.5V
Vgs=-10V
1.4
Vgs=-2.5V
Vgs=-2.5V
Id=-2A
1
0.8
20
0
2
4
6
8
0
10
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
190
170
1.0E+00
150
Id=-2A
1.0E-01
130
125°C
1.0E-02
110
90
-Is (A)
Rds(on) (m� )
0.5
1.6
100
Rds(on) (m� )
125°C
4
25°C
Vgs=-2V
5
6
125°C
70
1.0E-03
25°C
50
25°C
1.0E-04
.
1.0E-05
30
10
0
2
4
6
8
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
4-3
1.2
Single P-channel MOSFET
ELM16401EA-S
5
1200
Capacitance (pF)
4
-Vgs (Volts)
1400
Vds=-15V
Id=-5A
3
2
1
1000
600
400
Coss
Crss
200
0
2
6
8
10
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10.0
4
Tj(max)=150°C
Ta=25°C
0
10ms
30
Tj(max)=150°C
Ta=25°C
20
10
1s
10s
DC
0.1
Z�ja Normalized Transient
Thermal Resistance
15
20
25
-Vds (Volts)
Figure 8: Capacitance Characteristics
30
100�s
0.1s
1
10
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
10
10�s
1ms
0.1
5
40
Rds(on)
limited
1.0
0
12
Power (W)
0
-Id (Amps)
Ciss
800
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000