July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. VDS (V) = -30V ID = -5A RDS(ON) < 49mΩ (VGS = 10V) RDS(ON) < 64mΩ (VGS = 4.5V) RDS(ON) < 120mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A A A S G 1 2 3 4 8 7 6 5 K K D D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain CurrentA TA=70°C B TA=25°C A Continuous Forward Current TA=70°C B S A MOSFET TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics Schottky Steady-State Steady-State t ≤ 10s A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. TJ, TSTG Symbol RθJA RθJL RθJA RθJL Units V ±12 -5 V -4.2 A -30 IF PD Schottky -30 IFM TA=25°C Maximum Junction-to-Lead ID IDM VKA Schottky reverse voltage Pulsed Forward Current K G SOIC-8 Pulsed Drain Current D 30 4.4 V 3.2 A 2 30 2 1.44 1.44 -55 to 150 -55 to 150 °C Typ Max Units 48 62.5 74 35 110 40 49 62.5 72 37 110 42 W °C/W °C/W AO4701 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.7 gFS VSD IS Static Drain-Source On-Resistance Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VDS=-5V, ID=-5A ±100 -1.3 nA V A mΩ 83 11 120 mΩ -0.75 -1 -3 V A 54 7 mΩ S 952 103 pF pF VGS=0V, VDS=0V, f=1MHz 77 5.9 pF Ω VGS=-4.5V, VDS=-15V, ID=-4A 9.5 2 nC nC 3.1 12 4 37 12 21 nC ns ns ns ns VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω Body Diode Reverse Recovery Time Junction Capacitance µA VGS=0V, VDS=-15V, f=1MHz IF=-5A, dI/dt=100A/µs Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs SCHOTTKY PARAMETERS VF Forward Voltage Drop IF=1.0A VR=30V Irm VR=30V, TJ=125°C Maximum reverse leakage current VR=30V, TJ=150°C CT -1 -5 49 74 64 TJ=125°C Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time -1 42.5 Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance Units -25 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Max V TJ=55°C VGS=-10V, ID=-5A RDS(ON) Typ VR=15V ns nC 13 0.45 0.007 0.5 0.05 V 3.2 12 37 10 20 mA A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA id i l l ti Alpha & Omega Semiconductor, Ltd. pF AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25 VDS=-5V -10V -4.5V 20 8 6 15 -ID(A) -ID (A) -3V -2.5V 10 VGS=-2V 5 125°C 4 25°C 2 0 0 0 1 2 3 4 5 0 0.5 120 1.5 Normalized On-Resistance 1.6 100 RDS(ON) (mΩ) 1 VGS=-2.5V 80 60 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics VGS=-4.5V 40 VGS=-10V ID=-5A VGS=-4.5V VGS=-10V 1.4 1.2 VGS=-2.5V ID=-2A 1 20 0 2 4 6 8 0.8 10 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 190 170 1.0E+00 150 ID=-2A 130 1.0E-01 110 -IS (A) RDS(ON) (mΩ) 25 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 30 1.0E-05 10 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4701 5 3 50 175 perature 1.0 1.2 stics Alpha and Omega Semiconductor, Ltd. AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-15V ID=-5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 Crss 200 0 0 0 2 4 6 8 10 12 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150°C TA=25°C 20 25 30 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 30 100µs 1ms 0.1s 10ms 1s 1.0 15 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 10 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 -VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4701 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 250 10 f = 1MHz Capacitance (pF) 1 IF (Amps) 200 125°C 0.1 0.01 150 100 50 25°C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VF (Volts) Figure 12: Schottky Forward Characteristics 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.7 100 0.6 Leakage Current (mA) IF=3A 0.5 VF (Volts) 5 0.4 IF=1A 0.3 0.2 10 1 VR=30V 0.1 0.01 0.001 0.1 0 25 50 75 100 125 Temperature (°C) 150 0 175 25 50 75 100 125 150 175 Temperature (°C) Figure 15: Schottky Leakage current vs. Junction Temperature Figure 14: Schottky Forward Drop vs. Junction Temperature Z θJA Normalized Transient Thermal Resistance 10 1 D=Ton/(Ton+Toff ) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN NOTE: LOGO - AOS LOGO 4701 - PART NUMBER CODE. F - FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. LN - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4701 4701 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data