AO6401A 30V P-Channel MOSFET General Description The AO6401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS -30V ID (at VGS=-10V) -5A RDS(ON) (at VGS=-10V) < 47mΩ RDS(ON) (at VGS =-4.5V) < 64mΩ RDS(ON) (at VGS=-2.5V) < 85mΩ D Top View D 1 6 D 2 5 D G 3 4 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/5 Steady-State Steady-State A 2 W 1.3 TJ, TSTG Symbol t ≤ 10s V -28 PD TA=70°C ±12 -4 IDM TA=25°C B Units V -5 ID TA=70°C C Maximum -30 RθJA RθJL -55 to 150 Typ 47.5 74 37 °C Max 62.5 110 50 Units °C/W °C/W °C/W www.freescale.net.cn AO6401A 30V P-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -28 TJ=55°C -5 nA -1.3 V 39 47 60 74 VGS=-4.5V, ID=-4A 45 64 mΩ VGS=-2.5V, ID=-1A 59 85 mΩ 18 TJ=125°C Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Output Capacitance Reverse Transfer Capacitance Rg Gate resistance A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Crss µA ±100 gFS Coss Units -0.9 VGS=-10V, ID=-5A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 645 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S -1 V -2.5 A 780 pF 80 4 mΩ pF 55 80 pF 7.8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 17 nC Qg(4.5V) Total Gate Charge 7 8.5 nC Qgs Gate Source Charge VGS=-10V, VDS=-15V, ID=-5A 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time 3.5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 11 Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 3.5 VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 41 ns 9 ns 13.5 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. 2/5 www.freescale.net.cn AO6401A 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 -4.5V -10V VDS=-5V 20 15 -7V -ID(A) -ID (A) 15 -2.5V 10 125°C 10 5 25°C 5 VGS=-2.0V 0 0 0 1 2 3 4 0 5 0.5 100 1.5 2 2.5 3 Normalized On-Resistance 1.8 80 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V 1.6 VGS=-10V ID=-5A 1.4 17 VGS=-4.5V 5 ID=-4A 2 1.2 VGS=-2.5V ID=-1A 1 10 0.8 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 150 1.0E+01 ID=-5A 130 1.0E+00 110 1.0E-01 90 -IS (A) RDS(ON) (mΩ ) 40 125°C 1.0E-03 70 25°C 50 25°C 1.0E-04 1.0E-05 30 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/5 125°C 1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO6401A 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-5A 8 800 Capacitance (pF) -VGS (Volts) Ciss 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Coss Crss 0 100.0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics 25 10000 TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 1000 Power (W) -ID (Amps) 10.0 100 10 10s DC 0.0 1 0.01 0.1 1 10 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=110°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AO6401A 30V P-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 5/5 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn