Single P-channel MOSFET ELM36403EA-S ■General description ■Features ELM36403EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-30V Id=-5A Rds(on) < 51mΩ (Vgs=-10V) Rds(on) < 85mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -30 V Gate-source voltage Vgs ±20 -5.0 -4.2 V -20 2.0 1.4 A Ta=25°C Ta=70°C Continuous drain current Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Junction and storage temperature range Tj, Tstg A 3 W -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤5s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. Max. 62.5 Unit °C/W 110.0 50.0 °C/W °C/W ■Circuit SOT-26(TOP VIEW) 6 1 5 2 Note 4 3 D Pin No. 1 Pin name DRAIN 2 3 4 DRAIN GATE SOURCE 5 6 DRAIN DRAIN 4-1 G S Single P-channel MOSFET ELM36403EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-20V, Vgs=0V, Ta=125°C -10 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Max. body-diode continuous current -30 Vds=-24V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note -1.0 -20 -1.8 μA ±100 nA -3.0 V A Vgs=-10V, Id=-5A 42 51 mΩ Vgs=-4.5V, Id=-4A 66 85 mΩ Vds=-10V, Id=-5A Is=-1A, Vgs=0V 10 -1 S V Is -3 A Ism -6 A Gfs Vsd 1 1 1 1 3 Ciss 700 pF Coss Vgs=0V, Vds=-10V, f=1MHz Crss 120 75 pF pF Gate-source charge Qg Qgs 12.5 2.1 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 3.5 7 nC ns 2 2 Turn-on rise time Turn-off delay time tr 10 ns 2 30 ns 2 22 13.4 ns nC 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Body diode reverse recovery charge Vgs=-10V, Vds=-15V Id=-5A Vgs=-10V, Vds=-15V td(off) Id=-1A, Rgen=6Ω tf Qrr NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 NIKO-SEM Single P-channel MOSFET P-Channel Logic Level Enhancement ELM36403EA-S P5103EAG TSOP-6 Lead-Free Mode Field Effect Transistor_Preliminary ■Typical electrical and thermal characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 10 -Is - Reverse Drain Current(A) V GS = 0V 25°C 0.1 -55°C 0.01 0.001 0.0001 4-3 T A = 125°C 1 0 0.2 0.4 0.6 0.8 1.0 -VSD - Body Diode Forward Voltage(V) 1.2 1.4 Single P-channel MOSFET Level Enhancement NIKO-SEM P-Channel Logic ELM36403EA-S Mode Field Effect Transistor_Preliminary P5103EAG TSOP-6 Lead-Free 4-4 May-18-2006