Single N-channel MOSFET ELM32402LA-S ■General description ■Features ELM32402LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=20V Id=20A Rds(on) < 50mΩ (Vgs=5V) Rds(on) < 85mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Gate-source voltage Vgs Continuous drain current Ta=25°C ±16 20 Id Ta=100°C Pulsed drain current Tc=25°C Pd Tc=100°C Junction and storage temperature range Tj, Tstg A 13 40 26 Idm Power dissipation V A 3 W 11 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Steady-state Symbol Rθjc Maximum junction-to-ambient Steady-state Rθja ■Pin configuration Typ. Max. 4.8 Unit °C/W 110.0 °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32402LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=13.2V, Vgs=0V, Ta=125°C 10 Vds=0V, Vgs=±16V Static drain-source on-resistance Rds(on) Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=10V Max. body-diode continuous current 20 Vds=16V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note 0.45 20 0.75 μA ±100 nA 1.00 V A Vgs=5V, Id=6A 37 50 mΩ Vgs=2.5V, Id=5A 55 85 mΩ Vds=10V, Id=6A If=Is, Vgs=0V 13 1.3 S V Is 20 A Ism 40 A Gfs Vsd 1 1 1 1 3 Ciss 195 pF Coss Vgs=0V, Vds=15V, f=1MHz Crss 125 50 pF pF Gate-source charge Qg Qgs 7.5 0.9 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 4.0 4.5 nC ns 2 2 Turn-on rise time Turn-off delay time tr 49.5 ns 2 12.0 ns 2 6.0 ns 2 Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Vgs=5V, Vds=10V, Id=10A Vgs=5V, Vds=10V, Id=1A td(off) RL=1Ω,Rgen=3.3Ω tf NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 Single N-channel MOSFET P5002CDG N-Channel Logic Level Enhancement Mode Field ELM32402LA-S Effect Transistor ■Typical electrical and thermal characteristics TO-252 Lead-Free 100 VGS= 0V 10 Is - Reverse Drain Current(A) NIKO-SEM 25° C 0.1 -55° C 0.01 0.001 0.0001 4-3 T = 125° C 1 0 0.6 0.2 0.4 0.8 VSD - Body Diode Forward Voltage(V) 1.0 1.2 NIKO-SEM Single N-channel MOSFET N-Channel Logic Level Enhancement Mode Field Effect Transistor ELM32402LA-S 4-4 P5002CDG TO-252 Lead-Free