MOSFET SMD Type P-Channel Enhancement MOSFET SI2335DS (KI2335DS) SOT-23 ■ Features Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ● VDS (V) =-12V 0.4 3 ● RDS(ON) ＜ 70mΩ (VGS =-2.5V) 1 ● RDS(ON) ＜ 106mΩ (VGS =-1.8V) 0.55 ● RDS(ON) ＜ 51mΩ (VGS =-4.5V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● ID =-4.0A (VGS =-4.5V) 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 3 D 1.Gate 2.Source 2 0-0.1 S +0.1 0.97 -0.1 1 +0.1 0.38 -0.1 G +0.05 0.1 -0.01 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation ID -4.0 Ta = 70℃ Thermal Resistance.Junction- to-Ambient t≤5 sec Steady State PD RthJA -2.6 A -15 1.25 0.75 0.8 0.48 W 100 166 RthJF 50 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Thermal Resistance.Junction- to-Foot V -3.2 -3.3 IDM Ta = 25℃ Unit ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel Enhancement MOSFET SI2335DS (KI2335DS) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance *1 VGS(th) RDS(On) Test Conditions ID=-250μA, VGS=0V Min Forward Transconductance *1 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Maximum Body-Diode Continuous Current Diode Forward Voltage *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. ■ Marking Marking 2 ID(ON) -12 VDS=-9.6V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±8V VDS=VGS ID=-250μA -0.45 www.kexin.com.cn E5* nA -1.0 V 45 51 VGS=-2.5V, ID=-3.5A 58 70 82 106 -15 VGS=-2.5V, VDS=-5V -6 VDS=-5V, ID=-4.0A μA ±100 VGS=-4.5V, ID=-4.0A VGS=-4.5V, VDS=-5V Unit V -1 mΩ A 7 S 1225 VGS=0V, VDS=-6V, f=1MHz pF 260 130 9 VGS=-4.5V, VDS=-6V, ID=-4.0A 15 nC 1.9 1.5 VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=6Ω ID=-1.0A IS VSD Max VDS=-9.6V, VGS=0V VGS=-1.8V, ID=-2A On state drain current *1 Typ IS=-1.6A,VGS=0V 13 20 15 25 50 70 19 ns 35 -1.6 A -1.2 V MOSFET SMD Type P-Channel Enhancement MOSFET SI2335DS (KI2335DS) ■ Typical Characterisitics Output Characteristics 15 Transfer Characteristics 15 VGS = 4.5 thru 2.5 V TC = –55 C 12 I D – Drain Current (A) I D – Drain Current (A) 12 2V 9 6 1.5 V 3 25 C 9 125 C 6 3 1, 0.5 V 0 0 2 4 6 8 0 0.0 10 0.5 VDS – Drain-to-Source Voltage (V) 2.5 0.25 0.20 VGS = 1.8 V 0.15 0.10 VGS = 2.5 V 1500 Ciss 1000 500 Coss 0.05 VGS = 4.5 V 0.00 Crss 0 0 3 6 9 12 15 0 3 Gate Charge 8 6 9 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 4.0 A r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 2.0 Capacitance 2000 C – Capacitance (pF) ) r DS(on) – On-Resistance ( 1.5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1.0 6 4 2 0 0 5 10 15 Qg – Total Gate Charge (nC) 20 1.4 VGS = 4.5 V ID = 4.0 A 1.2 1.0 0.8 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature ( C) www.kexin.com.cn 3 MOSFET SMD Type P-Channel Enhancement MOSFET SI2335DS (KI2335DS) ■ Typical Characterisitics Source-Drain Diode Forward Voltage 20 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) – On-Resistance ( I S – Source Current (A) ) 10 TJ = 150 C TJ = 25 C 1 0.4 ID = 4.0 A 0.3 0.2 0.1 0.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 4 6 8 VGS – Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 0.4 12 ID = 250 A 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 2 0.1 6 0.0 4 TA = 25 C 2 –0.1 . –0.2 –50 –25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ – Temperature ( C) 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 4 www.kexin.com.cn 10 100 600 600