Single P-channel MOSFET ELM33415CA-S ■General description ■Features ELM33415CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • • Vds=-20V Id=-3.5A Rds(on) < 51mΩ (Vgs=-4.5V) Rds(on) < 61mΩ (Vgs=-2.5V) Rds(on) < 71mΩ (Vgs=-1.8V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds -20 V Gate-source voltage Vgs ±8 -3.5 -2.8 V Idm -21 A Pd 1.0 0.6 W Tj, Tstg -55 to 150 °C Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Junction and storage temperature range Id A 3 ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 120 ■Circuit SOT-23(TOP VIEW) 3 1 Unit °C/W 2 D Pin No. 1 2 Pin name GATE SOURCE 3 DRAIN G S 4-1 Note Single P-channel MOSFET ELM33415CA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Gate threshold voltage On state drain current Static drain-source on-resistance Condition -20 V Vds=-16V, Vgs=0V -1 Vds=-10V, Vgs=0V, Ta=70°C -10 Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V nA -0.45 -0.60 -0.90 -21 V A 1 mΩ 1 S 1 -1.3 V 1 -3.5 A 40 51 Rds(on) Vgs=-2.5V, Id=-3.5A 48 61 60 17 71 Forward transconductance Gfs Diode forward voltage Vsd If=-3.5A, Vgs=0V Is pF Coss Vgs=0V, Vds=-10V, f=1MHz Crss 1180 185 117 Gate-source charge Qg Qgs 16.7 1.8 nC nC 2 2 Gate-drain charge Turn-on delay time Qgd td(on) 4.6 20 nC ns 2 2 Turn-on rise time Turn-off delay time tr Vgs=-4.5V, Vds=-10V 36 ns 2 td(off) Id=-3.5A, Rgen=3.3Ω 45 ns 2 62 30 ns ns 2 14 nC Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Ciss μA ±100 Vgs=-4.5V, Id=-3.5A Vgs=-1.8V, Id=-2.0A Vds=-5V, Id=-3.5A Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note tf trr Qrr Vgs=-4.5V, Vds=-10V Id=-3.5A If=-3.5A, dIf/dt=100A/μs NOTE : 1. Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 4-2 pF pF Single P-channel MOSFET ELM33415CA-S ■Typical electrical and thermal characteristics � � � � � � 4-3 Single P-channel MOSFET ELM33415CA-S � � �� �� � � � � � 4-4