elm14604aa

Complementary MOSFET
ELM14604AA-N
■General Description
■Features
ELM14604AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
N-channel
P-channel
Vds=30V
Id=6.9A(Vgs=10V)
Rds(on) < 28mΩ(Vgs=10V)
Rds(on) < 42mΩ(Vgs=4.5V)
Vds=-30V
Id=-5A(Vgs=-10V)
Rds(on) < 52mΩ(Vgs=-10V)
Rds(on) < 87mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Symbol
Vds
Vgs
Drain-source voltage
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Ta=25°C. Unless otherwise noted.
N-ch (Max.)
P-ch (Max.)
Unit Note
30
-30
V
±20
±20
V
6.9
5.8
30
-5.0
-4.2
-20
2.00
2.00
1.44
-55 to 150
1.44
-55 to 150
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj,Tstg
A
1
A
2
W
°C
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Symbol
t≤10s
Maximum junction-to-ambient
Steady-state
Maximum junction-to-lead
Maximum junction-to-ambient
Steady-state
t≤10s
Maximum junction-to-ambient
Maximum junction-to-lead
Steady-state
Steady-state
Rθja
1
8
2
7
3
6
4
5
Typ.
48.0
Max.
62.5
Unit
°C/W
N-ch
74.0
110.0
°C/W
35.0
48.0
40.0
62.5
°C/W
°C/W
74.0
35.0
110.0
40.0
°C/W
°C/W
Rθjl
Rθja
Rθjl
■Pin configuration
SOP-8(TOP VIEW)
Device
P-ch
Note
1
3
1
3
■Circuit
Pin No.
1
Pin name
SOURCE2
2
3
4
GATE2
SOURCE1
GATE1
5
6
7
DRAIN1
DRAIN1
DRAIN2
8
DRAIN2
7-1
• N-ch
• P-ch
D1
D2
G1
G2
S2
S1
Complementary MOSFET
ELM14604AA-N
■Electrical Characteristics (N-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
BVdss Id=250μA, Vgs=0V
Idss
Vds=24V, Vgs=0V
30
0.004
Ta=55°C
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=250μA
1.0
On state drain current
Id(on) Vgs=4.5V, Vds=5V
20
Static drain-source on-resistance
Rds(on)
Gfs
Vsd
Is
Ta=125°C
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qgs
Qgd
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Vds=5V, Id=6.9A
Is=1A
1.9
10.0
100
3.0
μA
nA
V
A
22.5
31.3
34.5
Vgs=4.5V, Id=5.0A
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
DYNAMIC PARAMETERS
1.000
5.000
Gate-body leakage current
Gate threshold voltage
Vgs=10V, Id=6.9A
V
15.4
0.76
28.0
38.0
42.0
1.00
3
S
V
A
Vgs=0V, Vds=15V, f=1MHz
680
102
Vgs=0V, Vds=0V, f=1MHz
77
3.0
3.6
pF
Ω
13.84
17.00
nC
6.74
1.82
3.20
8.10
nC
nC
nC
Qg
Vgs=10V, Vds=15V, Id=6.9A
td(on)
tr
Vgs=10V, Vds=15V
td(off) RL=2.2Ω, Rgen=3Ω
820
mΩ
pF
pF
4.6
4.1
20.6
ns
ns
ns
ns
ns
Turn-off fall time
Body-diode reverse recovery time
tf
trr
If=6.9A, dIf/dt=100A/μs
5.2
16.5
Body-diode reverse recovery charge
Qrr
If=6.9A, dIf/dt=100A/μs
7.8
20.0
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-2
Complementary MOSFET
AO4604
ELM14604AA-N
N-CHANNEL:
TYPICAL ELECTRICAL
ANDCharacteristics
THERMAL CHARACTERISTICS
■Typical Electrical
and Thermal
(N-ch)
20
30
10V
25
6V
5V
4.5V
12
15
Id (A)
Id (A)
20
3.5V
8
10
125°C
Vgs=3V
5
4
0
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Vgs (Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
60
50
Rds(on) (m� )
25°C
0
5
Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=4.5V
40
30
Vgs=10V
20
Vgs=10V
Id=5A
1.5
1.4
Vgs=4.5V
1.3
1.2
1.1
1
0.9
0.8
10
0
5
10
15
0
20
50
100
150
200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction Temperature
Id (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
Is Amps
Id=5A
60
Rds(on) (m� )
Vds=5V
16
4V
50
125°C
40
1.0E-01
1.0E-02
125°C
1.0E-03
30
25°C
1.0E-04
25°C
20
1.0E-05
0.0
10
2
4
6
8
10
Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
7-3
0.2
0.4
0.6
0.8
Vsd (Volts)
Figure 6: Body diode characteristics
1.0
AO4604
Complementary MOSFET
ELM14604AA-N
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
f=1MHz
Vgs=0V
900
800
Capacitance (pF)
8
Vgs (Volts)
1000
Vds=15V
Id=6.9A
6
4
2
700
Ciss
600
500
400
300
200
Coss
100
0
0
2
4
6
8
10
12
Crss
0
14
0
5
Qg (nC)
Figure 7: Gate-Charge characteristics
100
10ms
1s
DC
0.1
1
10
100
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
0
0.001
Vds (Volts)
10
30
10
10s
0.1
25
Tj(max.)=150°C
Ta=25°C
30
10�s
0.1s
1
20
40
Power W
Id (Amps)
100�s
1ms
10
15
Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max.)=150°C
Ta=25°C
Rds(on)
limited
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
1
0.1
Pd
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-4
100
1000
Complementary MOSFET
ELM14604AA-N
■Electrical Characteristics (P-ch)
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ. Max. Unit
Conditions
BVdss Id=-250μA, Vgs=0V
Idss
-30
-1
Vds=-24V, Vgs=0V
Ta=55°C
-5
Gate-body leakage current
Gate threshold voltage
Igss Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
-1.0
On state drain current
Id(on) Vgs=-4.5V, Vds=-5V
-20
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-5A
Gfs
Vsd
Is
Ta=125°C
Input capacitance
Output capacitance
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Total gate charge (4.5V)
Qg
Qgs
Qgd
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
Vds=-5V, Id=-5A
Is=-1A, Vgs=0V
-1.8
6.0
±100
-3.0
μA
nA
V
A
39
54
67
Vgs=-4.5V, Id=-4A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
V
8.6
-0.77
52
70
87
-1.00
-2.8
S
V
A
Vgs=0V, Vds=-15V, f=1MHz
700
120
Vgs=0V, Vds=0V, f=1MHz
75
10
15
pF
Ω
14.7
19.0
nC
7.6
2.0
3.8
10.0
nC
nC
nC
Qg
Vgs=-10V, Vds=-15V, Id=-5A
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) RL=3Ω, Rgen=3Ω
900
mΩ
pF
pF
8.3
5.0
29.0
ns
ns
ns
ns
ns
tf
trr
If=-5A, dIf/dt=100A/μs
14.0
23.5
Qrr
If=-5A, dIf/dt=100A/μs
13.4
30.0
nC
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
7-5
Complementary MOSFET
AO4604
ELM14604AA-N
■Typical Electrical and Thermal Characteristics (P-ch)
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
-6V
-4.5V
15
Vds=-5V
8
-4V
10
-Id (A)
-Id (A)
10
-5V
-3.5V
Vgs=-3V
5
6
4
125°C
2
25°C
-2.5V
0
0.00
0
1.00
2.00
3.00
4.00
5.00
0
1
3
4
1.60E+00
80
Normalized On-Resistance
Rds(on) (m� )
100
Vgs=-4.5V
60
Vgs=-10V
40
20
Vgs=-4.5V
1.40E+00
Vgs=-10V
1.20E+00
1.00E+00
Id=-5A
8.00E-01
1
3
5
7
9
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
160
140
1E+00
Id=-5A
120
1E-01
100
1E-02
-Is (A)
Rds(on) (m� )
2
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Figure 1: On-Region Characteristics
125°C
80
125°C
1E-03
25°C
1E-04
60
25°C
40
1E-05
1E-06
20
2
4
6
8
0.0
10
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
7-6
1.2
Complementary MOSFET
AO4604
ELM14604AA-N
P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
Capacitance (pF)
8
-Vgs (Volts)
1200
Vds=-15V
Id=-5A
6
4
2
Ciss
800
600
400
Coss
200
0
0
2
4
6
8
10
12
14
Crss
0
16
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max.)=150°C
Ta=25°C
10ms
10s
0.1
1
DC
Z� ja Normalized Transient
Thermal Resistance
20
-Vds (Volts)
10
0
0.001
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
30
10
1s
0.1
25
30
100�s
0.1s
20
Tj(max.)=150°C
Ta=25°C
10�s
1ms
1
15
40
Rds(on)
limited
10
10
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7-7
100
1000