Complementary MOSFET ELM14604AA-N ■General Description ■Features ELM14604AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=30V Id=6.9A(Vgs=10V) Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V) Vds=-30V Id=-5A(Vgs=-10V) Rds(on) < 52mΩ(Vgs=-10V) Rds(on) < 87mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol Vds Vgs Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note 30 -30 V ±20 ±20 V 6.9 5.8 30 -5.0 -4.2 -20 2.00 2.00 1.44 -55 to 150 1.44 -55 to 150 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj,Tstg A 1 A 2 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Steady-state Maximum junction-to-lead Maximum junction-to-ambient Steady-state t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja 1 8 2 7 3 6 4 5 Typ. 48.0 Max. 62.5 Unit °C/W N-ch 74.0 110.0 °C/W 35.0 48.0 40.0 62.5 °C/W °C/W 74.0 35.0 110.0 40.0 °C/W °C/W Rθjl Rθja Rθjl ■Pin configuration SOP-8(TOP VIEW) Device P-ch Note 1 3 1 3 ■Circuit Pin No. 1 Pin name SOURCE2 2 3 4 GATE2 SOURCE1 GATE1 5 6 7 DRAIN1 DRAIN1 DRAIN2 8 DRAIN2 7-1 • N-ch • P-ch D1 D2 G1 G2 S2 S1 Complementary MOSFET ELM14604AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions BVdss Id=250μA, Vgs=0V Idss Vds=24V, Vgs=0V 30 0.004 Ta=55°C Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA 1.0 On state drain current Id(on) Vgs=4.5V, Vds=5V 20 Static drain-source on-resistance Rds(on) Gfs Vsd Is Ta=125°C Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Qgs Qgd Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Vds=5V, Id=6.9A Is=1A 1.9 10.0 100 3.0 μA nA V A 22.5 31.3 34.5 Vgs=4.5V, Id=5.0A Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS 1.000 5.000 Gate-body leakage current Gate threshold voltage Vgs=10V, Id=6.9A V 15.4 0.76 28.0 38.0 42.0 1.00 3 S V A Vgs=0V, Vds=15V, f=1MHz 680 102 Vgs=0V, Vds=0V, f=1MHz 77 3.0 3.6 pF Ω 13.84 17.00 nC 6.74 1.82 3.20 8.10 nC nC nC Qg Vgs=10V, Vds=15V, Id=6.9A td(on) tr Vgs=10V, Vds=15V td(off) RL=2.2Ω, Rgen=3Ω 820 mΩ pF pF 4.6 4.1 20.6 ns ns ns ns ns Turn-off fall time Body-diode reverse recovery time tf trr If=6.9A, dIf/dt=100A/μs 5.2 16.5 Body-diode reverse recovery charge Qrr If=6.9A, dIf/dt=100A/μs 7.8 20.0 nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-2 Complementary MOSFET AO4604 ELM14604AA-N N-CHANNEL: TYPICAL ELECTRICAL ANDCharacteristics THERMAL CHARACTERISTICS ■Typical Electrical and Thermal (N-ch) 20 30 10V 25 6V 5V 4.5V 12 15 Id (A) Id (A) 20 3.5V 8 10 125°C Vgs=3V 5 4 0 0 1 2 3 4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Vgs (Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance 60 50 Rds(on) (m� ) 25°C 0 5 Vds (Volts) Fig 1: On-Region Characteristics Vgs=4.5V 40 30 Vgs=10V 20 Vgs=10V Id=5A 1.5 1.4 Vgs=4.5V 1.3 1.2 1.1 1 0.9 0.8 10 0 5 10 15 0 20 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature Id (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 1.0E+01 1.0E+00 Is Amps Id=5A 60 Rds(on) (m� ) Vds=5V 16 4V 50 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 0.0 10 2 4 6 8 10 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 7-3 0.2 0.4 0.6 0.8 Vsd (Volts) Figure 6: Body diode characteristics 1.0 AO4604 Complementary MOSFET ELM14604AA-N N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 f=1MHz Vgs=0V 900 800 Capacitance (pF) 8 Vgs (Volts) 1000 Vds=15V Id=6.9A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 5 Qg (nC) Figure 7: Gate-Charge characteristics 100 10ms 1s DC 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z�ja Normalized Transient Thermal Resistance 20 0 0.001 Vds (Volts) 10 30 10 10s 0.1 25 Tj(max.)=150°C Ta=25°C 30 10�s 0.1s 1 20 40 Power W Id (Amps) 100�s 1ms 10 15 Vds (Volts) Figure 8: Capacitance Characteristics Tj(max.)=150°C Ta=25°C Rds(on) limited 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 1 0.1 Pd Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-4 100 1000 Complementary MOSFET ELM14604AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions BVdss Id=-250μA, Vgs=0V Idss -30 -1 Vds=-24V, Vgs=0V Ta=55°C -5 Gate-body leakage current Gate threshold voltage Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=-250μA -1.0 On state drain current Id(on) Vgs=-4.5V, Vds=-5V -20 Static drain-source on-resistance Rds(on) Vgs=-10V, Id=-5A Gfs Vsd Is Ta=125°C Input capacitance Output capacitance Ciss Coss Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge (10V) Crss Rg Total gate charge (4.5V) Qg Qgs Qgd Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Vds=-5V, Id=-5A Is=-1A, Vgs=0V -1.8 6.0 ±100 -3.0 μA nA V A 39 54 67 Vgs=-4.5V, Id=-4A Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS V 8.6 -0.77 52 70 87 -1.00 -2.8 S V A Vgs=0V, Vds=-15V, f=1MHz 700 120 Vgs=0V, Vds=0V, f=1MHz 75 10 15 pF Ω 14.7 19.0 nC 7.6 2.0 3.8 10.0 nC nC nC Qg Vgs=-10V, Vds=-15V, Id=-5A td(on) tr Vgs=-10V, Vds=-15V td(off) RL=3Ω, Rgen=3Ω 900 mΩ pF pF 8.3 5.0 29.0 ns ns ns ns ns tf trr If=-5A, dIf/dt=100A/μs 14.0 23.5 Qrr If=-5A, dIf/dt=100A/μs 13.4 30.0 nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-5 Complementary MOSFET AO4604 ELM14604AA-N ■Typical Electrical and Thermal Characteristics (P-ch) P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V -6V -4.5V 15 Vds=-5V 8 -4V 10 -Id (A) -Id (A) 10 -5V -3.5V Vgs=-3V 5 6 4 125°C 2 25°C -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 3 4 1.60E+00 80 Normalized On-Resistance Rds(on) (m� ) 100 Vgs=-4.5V 60 Vgs=-10V 40 20 Vgs=-4.5V 1.40E+00 Vgs=-10V 1.20E+00 1.00E+00 Id=-5A 8.00E-01 1 3 5 7 9 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 Id=-5A 120 1E-01 100 1E-02 -Is (A) Rds(on) (m� ) 2 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Figure 1: On-Region Characteristics 125°C 80 125°C 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 0.0 10 0.4 0.6 0.8 1.0 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 7-6 1.2 Complementary MOSFET AO4604 ELM14604AA-N P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1000 Capacitance (pF) 8 -Vgs (Volts) 1200 Vds=-15V Id=-5A 6 4 2 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 12 14 Crss 0 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Tj(max.)=150°C Ta=25°C 10ms 10s 0.1 1 DC Z� ja Normalized Transient Thermal Resistance 20 -Vds (Volts) 10 0 0.001 100 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 30 10 1s 0.1 25 30 100�s 0.1s 20 Tj(max.)=150°C Ta=25°C 10�s 1ms 1 15 40 Rds(on) limited 10 10 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) -Id (Amps) 100 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-7 100 1000