elm16405ea

Single P-channel MOSFET
ELM16405EA-S
■General description
■Features
ELM16405EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-5A (Vgs=-10V)
Rds(on) < 52mΩ (Vgs=-10V)
Rds(on) < 87mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
-30
±20
-5.0
-4.2
-20
Id
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
V
V
2.0
1.4
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
47.5
74.0
Max.
62.5
110.0
Unit
°C/W
°C/W
Note
37.0
50.0
°C/W
3
■Circuit
SOT-26(TOP VIEW)
6
1
5
2
1
4
3
D
Pin No.
1
2
Pin name
DRAIN
DRAIN
3
4
5
GATE
SOURCE
DRAIN
6
DRAIN
4-1
G
S
Single P-channel MOSFET
ELM16405EA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
Vgs=-10V, Id=-5A
Forward transconductance
Gfs
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-1
-5
μA
±100
nA
-1.0
-20
-1.8
-3.0
V
A
39
52
Ta=125°C
54
67
8.6
70
87
6.0
-0.77
-1.00
V
-2.8
A
840
pF
pF
Is
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V, Id=-4A
Vds=-5V, Id=-5A
Max. body-diode continuous current
DYNAMIC PARAMETERS
-30
Vgs=0V, Vds=-15V, f=1MHz
700
120
Vgs=0V, Vds=0V, f=1MHz
75
10
Vgs=-10V, Vds=-15V
Id=-5A
14.7
7.6
2.0
15
18.0
9.5
mΩ
mΩ
S
pF
Ω
nC
nC
nC
3.8
8.3
nC
ns
Vgs=-10V, Vds=-15V
5.0
ns
td(off) RL=3Ω, Rgen=3Ω
tf
trr
If=-5A, dIf/dt=100A/μs
29.0
14.0
23.5
ns
ns
ns
Qrr
If=-5A, dIf/dt=100A/μs
NOTE :
13.4
30.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM16405EA-S
■Typical electrical and thermal characteristics
20
-10V
-6V
-4.5V
15
-4V
10
-3.5V
Vgs=-3V
5
0
0.00
2.00
3.00
4.00
6
4
125°C
2
-2.5V
1.00
Vds=-5V
8
-Id (A)
-Id (A)
10
-5V
25°C
0
5.00
0
1
3
4
1.60E+00
80
Normalized On-Resistance
Rds(on) (m� )
100
Vgs=-4.5V
60
Vgs=-10V
40
20
1
3
5
7
Vgs=-4.5V
1.40E+00
Vgs=-10V
1.20E+00
Id=-5A
1.00E+00
8.00E-01
9
0
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
160
140
1E+00
Id=-5A
120
1E-01
100
1E-02
-Is (A)
Rds(on) (m� )
2
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Figure 1: On-Region Characteristics
125°C
80
125°C
1E-03
25°C
1E-04
60
1E-05
25°C
40
1E-06
FUNCTIONS
AND RELIABILITY WITHOUT NOTICE.
20
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.2
Single P-channel MOSFET
ELM16405EA-S
10
1000
Capacitance (pF)
8
-Vgs (Volts)
1200
Vds=-15V
Id=-5A
6
4
2
Ciss
800
600
400
Coss
200
0
0
2
4
6
8
10
12
14
Crss
0
16
0
5
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C
Ta=25°C
40
30
100�s
1ms
0.1s
1
10ms
10s
0.1
DC
1
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=62.5°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
Z�ja Normalized Transient
Thermal Resistance
30
20
0
0.001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
25
10
1s
0.1
20
Tj(max)=150°C
Ta=25°C
10�s
Rds(on)
limited
10
15
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000