Complementary MOSFET ELM17600GA-S ■General Description ■Features ELM17600GA-S uses advanced trench technology to provide excellent Rds(on) a n d l o w g a t e c h a rg e . I n t e r n a l E S D protection is included. • • • • • N-channel P-channel Vds=20V Id=0.9A(Vgs=4.5V) Rds(on) < 300mΩ(Vgs=4.5V) Rds(on) < 350mΩ(Vgs=2.5V) Rds(on) < 450mΩ(Vgs=1.8V) Vds=-20V Id=-0.6A(Vgs=-4.5V) Rds(on) < 550mΩ(Vgs=-4.5V) Rds(on) < 700mΩ(Vgs=-2.5V) Rds(on) < 950mΩ(Vgs=-1.8V) ■Maximum Absolute Ratings Parameter Symbol Drain-source voltage Gate-source voltage Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Tc=25°C Tc=70°C Power dissipation Vds 20 -20 V Vgs ±8 ±8 V Id 0.90 0.70 -0.60 -0.48 A 1 Idm 5 -3 A 2 0.30 0.19 -55 to 150 0.30 0.19 -55 to 150 Pd Junction and storage temperature range Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit Note Tj,Tstg W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Symbol t≤10s Steady-state Maximum junction-to-lead Maximum junction-to-ambient Maximum junction-to-ambient Steady-state t≤10s Steady-state Maximum junction-to-lead Steady-state Rθja Rθja Rθjl Pin No. Pin name 5 1 SOURCE1 2 3 4 GATE1 DRAIN2 SOURCE2 5 6 GATE2 DRAIN1 1 2 3 Unit °C/W °C/W 350 415 460 °C/W °C/W °C/W 3 P-ch 300 360 400 300 350 °C/W 3 1 1 ■Circuit SC-70-6(TOP VIEW) 4 Max. 415 460 Note N-ch Typ. 360 400 Rθjl ■Pin configuration 6 Device • N-ch • P-ch D1 G2 G1 S1 7-1 D2 S2 Complementary MOSFET ELM17600GA-S ■Electrical Characteristics (N-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=16V, Vgs=0V Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±8V Forward transconductance Diode forward voltage Max.body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body-diode reverse recovery time Body-diode reverse recovery charge Rds(on) Gfs Vsd V 1 Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V 5 25 0.75 0.90 181 300 Vgs=2.5V, Id=0.75A 253 237 330 350 Vgs=1.8V, Id=0.7A Vds=5V, Id=0.8A Is=0.5A, Vgs=0V 317 2.6 0.69 450 Vgs=4.5V, Id=0.9A Static drain-source on-resistance 20 0.50 5 Ta=125°C Is Ciss Coss Crss Rg Qg Qgs 101 Vgs=0V, Vds=10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=4.5V, Vds=10V, Id=0.8A 17 14 3 1.57 0.13 μA μA V A mΩ 1.00 S V 0.4 A 120 pF 4 pF pF Ω 1.90 nC nC Qgd td(on) 0.36 3.2 nC ns tr Vgs=5V, Vds=10V, RL=12.5Ω td(off) Rgen=6Ω tf 4.0 15.5 2.4 ns ns ns trr Qrr If=0.8A, dIf/dt=100A/μs If=0.8A, dIf/dt=100A/μs 6.7 1.6 8.1 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-2 Complementary MOSFET AO7600 ELM17600GA-S ■Typical Electrical and Thermal Characteristics (N-ch) N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4 8V 10V Vds=5V 5V 8 3 6 3.5V 3V 4 25°C 125°C Id (A) Id (A) 4V 2 2.5V 1 Vgs=2V 2 0 0 0 1 2 3 4 5 0 0.5 480 1.8 440 Vgs=1.8V Normalized On-Resistance Rds(on) (m� ) 1.5 400 360 320 Vgs=2.5V 280 240 Vgs=4.5V 200 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics Vds (Volts) Fig 1: On-Region Characteristics 160 Vgs=1.8V 1.6 Vgs=2.5V Id=0.7A Id=0.75A 1.4 Vgs=4.5V 1.2 Id=0.9A 1 0.8 0 1 2 3 4 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 500 460 1E+00 420 125°C Id=0.9A 1E-01 380 340 Is (A) Rds(on) (m� ) 1 125°C 300 1E-02 25°C 1E-03 260 220 25°C 1E-04 180 1E-05 140 1 2 3 4 5 6 7 0.0 8 0.4 0.8 1.2 1.6 Vsd (Volts) Figure 6: Body-Diode Characteristics Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 7-3 2.0 Complementary MOSFET AO7600 ELM17600GA-S N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 Vds=10V Id=0.9A Capacitance (pF) Vgs (Volts) 4 3 2 1 150 Ciss 100 Coss 50 0 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10.0 Tj(max.)=150°C, Ta=25°C Rds(on) limited 16 100�s 10ms 10s 1 10 100 8 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=415°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) Z� ja Normalized Transient Thermal Resistance Tj(max.)=150°C Ta=25°C 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 20 4 DC 0.0 0.1 15 12 1ms 0.1s 1s 0.1 10 10�s Power (W) 1.0 5 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 P Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-4 100 1000 Complementary MOSFET ELM17600GA-S ■Electrical Characteristics (P-ch) Parameter Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Conditions STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V Zero gate voltage drain current Idss Vds=-16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±8V Gate threshold voltage On state drain current Static drain-source on-resistance Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge -20 -1 Ta=55°C Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-4.5V, Vds=-5V Rds(on) Gfs Vsd V -5 ±10 -0.6 -0.9 415 550 Vgs=-2.5V, Id=-0.5A 542 590 700 700 Vgs=-1.8V, Id=-0.4A Vds=-5V, Id=-0.6A Is=-0.5A, Vgs=0V 700 1.7 -0.86 950 Vgs=-4.5V Id=-0.6A -0.5 -3 Ta=125°C Coss Crss Rg Qg Qgs Qgd td(on) Vgs=0V, Vds=-10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=-4.5V, Vds=-10V Id=-0.6A tr Vgs=-4.5V, Vds=-10V td(off) RL=16.7Ω, Rgen=3Ω tf trr Qrr If=-0.6A, dIf/dt=100A/μs If=-0.6A, dIf/dt=100A/μs μA V A mΩ -1.00 S V -0.4 A 114 17 14 12 140 pF 17 pF pF Ω 1.44 0.14 1.80 Is Ciss μA nC nC 0.35 6.5 nC ns 6.5 18.2 5.5 ns ns ns 10 3 13 ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 7-5 Complementary MOSFET AO7600 ELM17600GA-S ■Typical Electrical and Thermal Characteristics (P-ch) P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -6V -10V -4.5V -4V 3 125°C -3.5V -Id (A) -Id (A) 4 -3V 2 -2.5V 2 1 Vgs=-2.0V 0 0 0 1 2 3 4 5 0 0.5 1 1.5 900 1.6 700 Normalized On-Resistance Vgs=-1.8V 800 Vgs=-2.5V 600 500 Vgs=-4.5V 400 2 2.5 3 3.5 4 4.5 -Vgs (Volts) Figure 2: Transfer Characteristics -Vds (Volts) Fig 1: On-Region Characteristics Rds(on) (m� ) 25°C Vds=-5V 300 Vgs=-1.8V Id=-0.4A 1.4 Vgs=-2.5V Id=-0.5A 1.2 Vgs=-4.5V Id=-0.6A 1 0.8 0 1 2 3 4 0 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 900 Id=-0.6A 800 1.0E-01 -Is (A) Rds(on) (m� ) 125°C 1.0E-02 700 125°C 600 500 25°C 1.0E-03 1.0E-04 25°C 1.0E-05 400 1.0E-06 300 0 2 4 6 8 0.0 10 0.8 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.4 7-6 1.2 Complementary MOSFET AO7600 ELM17600GA-S P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 Capacitance (pF) 4 -Vgs (Volts) 200 Vds=-10V Id=-0.6A 3 2 1 0 0.0 0.5 1.0 1.5 Ciss 150 100 Coss 50 0 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics Rds(on) limited -Id (Amps) 1ms 10�s 100�s 1s 10s 20 10 10ms 0.01 15 Tj(max.)=150°C Ta=25°C 12 0.1s 0.10 10 14 Tj(max.)=150°C, Ta=25°C 1.00 5 -Vds (Volts) Figure 8: Capacitance Characteristics Power (W) 10.00 Crss DC 8 6 4 2 0 0.001 0.00 0.1 1 10 100 -Vds (Volts) Z� ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=415°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 P Pd 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 7-7 100 1000