AO7600 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO7600 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. Standard Product AO7600 is Pb-free (meets ROHS & Sony 259 specifications). AO7600L is a Green Product ordering option. AO7600 and AO7600L are electrically identical. n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) RDS(ON) RDS(ON) < 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V) < 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V) < 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.8V) D2 D1 SC-70-6 (SOT-323) Top View S1 G1 D2 p-channel -20V -0.6A (VGS=-4.5V) G G D1 G2 S2 S2 S1 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±8 0.9 -0.6 ID 0.7 -0.48 IDM 5 -3 0.3 0.3 TA=70°C 0.19 0.19 Junction and Storage Temperature Range -55 to 150 -55 to 150 PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Units V V ±8 TA=25°C Continuous Drain Current A Max p-channel -20 A W °C Device n-ch n-ch n-ch Typ 360 400 300 Max Units 415 °C/W 460 °C/W 350 °C/W p-ch p-ch p-ch 360 400 300 415 460 350 °C/W °C/W °C/W AO7600 N-Channel: Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=16V, VGS=0V 20 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±8V VDS=VGS ID=250µA ID(ON) On state drain current VGS=4.5V, VDS=5V VGS=4.5V, ID=0.9A RDS(ON) gFS VSD IS TJ=125°C Units V µA 25 µA 0.75 0.9 V 181 253 300 330 mΩ 237 350 mΩ 317 2.6 0.69 450 mΩ 1 S V 0.4 A 5 VGS=2.5V, ID=0.75A VGS=1.8V, ID=0.7A VDS=5V, ID=0.8A Forward Transconductance Diode Forward Voltage IS=0.5A,VGS=0V Maximum Body-Diode Continuous Current A 101 17 14 120 VGS=0V, VDS=10V, f=1MHz pF pF pF VGS=0V, VDS=0V, f=1MHz 3 4 Ω 1.57 0.13 0.36 1.9 VGS=4.5V, VDS=10V, ID=0.8A nC nC nC Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=5V, VDS=10V, RL=12.5Ω, RGEN=6Ω 3.2 4 15.5 2.4 Body Diode Reverse Recovery Time IF=0.8A, dI/dt=100A/µs SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr 0.5 Max 1 5 TJ=55°C Static Drain-Source On-Resistance DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Typ Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/µs 6.7 1.6 ns ns ns ns 8.1 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO7600 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 10 10V 8V VDS=5V 5V 8 3 4V ID (A) ID(A) 3.5V 6 3V 4 25°C 125°C 2 2.5V 1 VGS=2V 2 0 0 0 1 2 3 4 5 0 0.5 480 2 2.5 3 VGS=1.8V Normalized On-Resistance VGS=1.8V 400 RDS(ON) (mΩ) 1.5 1.8 440 360 320 VGS=2.5V 280 240 VGS=4.5V 200 160 1.6 VGS=2.5V I 0 7A ID=0.75A 1.4 VGS=4.5V 1.2 ID=0.9A 1 0.8 0 1 2 3 4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 500 1E+01 460 1E+00 420 125°C ID=0.9A 1E-01 380 340 IS (A) RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 300 1E-02 25°C 1E-03 260 25°C 220 1E-04 180 1E-05 140 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics 2.0 AO7600 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=10V ID=0.9A Capacitance (pF) VGS (Volts) 4 3 2 1 150 Ciss 100 Coss 0 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TJ(Max)=150°C, TA=25°C 16 100µs 10ms 1s 0.1 10s 1 10 100 8 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C 0 0.001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 4 DC 0.0 0.1 15 12 1ms 0.1s 1.0 10 10µs Power (W) ID (Amps) RDS(ON) limited 5 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 Crss 50 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO7600 P-Channel Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, V DS=-5V -3 -0.6 -0.9 V 415 550 542 700 VGS=-2.5V, I D=-0.5A 590 700 mΩ VGS=-1.8V, I D=-0.4A 700 950 mΩ TJ=125°C Forward Transconductance Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-0.6A DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1.7 S -0.86 114 VGS=0V, VDS=-10V, f=1MHz -1 V -0.4 A 140 pF 17 pF 14 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, V DS=-10V, I D=-0.6A mΩ pF 12 17 Ω 1.44 1.8 nC nC Gate Drain Charge 0.35 nC Turn-On DelayTime 6.5 ns tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Qrr A 0.14 Qgd trr µA µA VSD Output Capacitance -5 ±10 gFS Coss V TJ=55°C VGS=-4.5V, I D=-0.6A IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=-16V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, V DS=-10V, RL=16.7Ω, RGEN=3Ω 6.5 ns 18.2 ns 5.5 Body Diode Reverse Recovery Time IF=-0.6A, dI/dt=100A/µs 10 Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs 3 ns 13 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet≤t≤10s 10sthermal thermalresistance resistancerating. rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. ns nC AO7600 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -6V -10V 25°C -4.5V VDS=-5V -4V 3 125°C -3.5V -ID(A) -ID (A) 4 -3V 2 -2.5V 2 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 0.5 1 900 1.6 Normalized On-Resistance VGS=-1.8V 800 RDS(ON) (mΩ) 1.5 700 VGS=-2.5V 600 500 VGS=-4.5V 400 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 300 VGS=-1.8V ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 900 1.0E+00 ID=-0.6A 800 1.0E-01 -IS (A) RDS(ON) (mΩ) 125°C 1.0E-02 700 125°C 600 500 25°C 1.0E-03 1.0E-04 25°C 1.0E-05 400 1.0E-06 300 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO7600 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=-10V ID=-0.6A Capacitance (pF) -VGS (Volts) 4 3 2 1 0 Ciss 150 100 Coss Crss 50 0 0.0 0.5 1.0 1.5 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited -ID (Amps) 1ms 10µs 100µs 20 10 10ms 1s 10s TJ(Max)=150°C TA=25°C 12 0.1s 0.10 15 14 TJ(Max)=150°C, TA=25°C 1.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 10.00 5 DC 8 6 4 0.01 2 0 0.001 0.00 0.1 1 10 100 -VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000