Dual N-channel MOSFET ELM17800GA-S ■General description ■Features ELM17800GA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection. • • • • • • Vds=20V Id=0.9A (Vgs=4.5V) Rds(on) < 300mΩ (Vgs=4.5V) Rds(on) < 350mΩ (Vgs=2.5V) Rds(on) < 450mΩ (Vgs=1.8V) ESD Rating : 1500V HBM ■Maximum absolute ratings Parameter Drain-source voltage Ta=25°C. Unless otherwise noted. Limit Unit Note 20 V Symbol Vds Gate-source voltage Vgs Ta=25°C Continuous drain current ±8 0.9 Id Ta=70°C Pulsed drain current Tc=25°C Tc=70°C Pd Junction and storage temperature range Tj, Tstg A 1 A 2 W 1 0.7 5 Idm Power dissipation V 0.30 0.19 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration SC-70-6(TOP VIEW) 6 1 5 2 4 3 Typ. 360 Max. 415 Unit °C/W 400 300 460 350 °C/W °C/W Note 1 3 ■Circuit Pin No. 1 Pin name SOURCE1 2 3 4 GATE1 DRAIN2 SOURCE2 5 6 GATE2 DRAIN1 4-1 D1 D2 G2 G1 S1 S2 Dual N-channel MOSFET ELM17800GA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Zero gate voltage drain current Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V Idss 20 1 Vds=16V, Vgs=0V Ta=55°C 5 Gate-source leakage current Gate threshold voltage Igss Vds=0V, Vgs=±8V Vgs(th) Vds=Vgs, Id=250μA 0.50 On state drain current Id(on) Vgs=4.5V, Vds=5V 5 Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Body diode reverse recovery time Body diode reverse recovery charge Rds(on) Gfs Vsd 0.75 Vgs=2.5V, Id=0.75A 300 350 350 Vgs=1.8V, Id=0.7A Vds=5V, Id=0.8A Is=0.5A, Vgs=0V 317 2.6 0.69 450 Ta=125°C Ciss Qg Qgs Qgd 101 Vgs=0V, Vds=10V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Vgs=4.5V, Vds=10V, Id=0.8A td(on) tr Vgs=5V, Vds=10V td(off) RL=12.5Ω, Rgen=6Ω μA μA V A Is Coss Crss Rg 25 0.90 181 253 237 Vgs=4.5V, Id=0.9A Static drain-source on-resistance V 17 14 3 1.57 0.13 0.36 mΩ 1.00 S V 0.4 A 120 pF 4 pF pF Ω 1.90 nC nC nC 3.2 4.0 15.5 ns ns ns ns ns tf trr If=0.8A, dIf/dt=100A/μs 2.4 6.7 Qrr If=0.8A, dIf/dt=100A/μs 1.6 8.1 nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Dual N-channel MOSFET ELM17800GA-S ■Typical electrical and thermal characteristics 10 4 8V 10V Vds=5V 5V 8 3 3.5V 6 3V 4 25°C 125°C Id (A) Id (A) 4V 2 2.5V Vgs=2V 2 1 0 0 0 1 2 3 4 5 0 0.5 Vds (Volts) Fig 1: On-Region Characteristics 1.5 1.8 440 Normalized On-Resistance Vgs=1.8V 400 360 320 Vgs=2.5V 280 240 Vgs=4.5V 200 2 2.5 3 Vgs (Volts) Figure 2: Transfer Characteristics 480 Rds(on) (m� ) 1 Vgs=1.8V 1.6 Vgs=2.5V Id=0.75A Id=0.7A 1.4 Vgs=4.5V Id=0.9A 1.2 1 160 0 1 2 3 0.8 4 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 500 460 1E+00 420 125°C Id=0.9A 380 1E-01 340 Is (A) Rds(o) (m� ) 25 125°C 300 260 1E-02 25°C 1E-03 220 25°C 1E-04 180 140 1 2 3 4 5 6 7 1E-05 8 0.0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.4 0.8 1.2 1.6 Vsd (Volts) Figure 6: Body-Diode Characteristics 4-3 2.0 Dual N-channel MOSFET ELM17800GA-S 200 5 Vds=10V Id=0.9A Capacitance (pF) Vgs (Volts) 4 3 2 1 150 Ciss 100 Coss 50 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 5 10.0 Tj(max)=150°C, Ta=25°C Rds(on) limited 10ms 16 100�s 1s 0.1 10s 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) Z� ja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=415°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Vds (Volts) 10 8 4 DC 0.0 0.1 20 12 1ms 0.1s 15 Tj(max)=150°C Ta=25°C 10�s Power (W) 1.0 10 Vds (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics Id (Amps) Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 P Pd 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000