New Product SS6P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance 1 • Meets MSL level 1, per J-STD-020 2 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-277A (SMPC) K Cathode • Halogen-free according to IEC 61249-2-21 definition Anode 1 Anode 2 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade PRIMARY CHARACTERISTICS IF(AV) 2 x 3.0 A VRRM 40 V IFSM 70 A EAS 20 mJ VF at IF = 3 A 0.53 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS6P4C Maximum repetitive peak reverse voltage VRRM total devive Maximum average forward rectified current (fig. 1) per diode IF(AV) 40 V 6.0 A 3.0 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 70 Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode EAS 20 TJ, TSTG - 55 to + 150 Operating junction and storage temperature range Document Number: 89114 Revision: 10-May-11 UNIT S64C A °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS6P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 1.5 A TA = 25 °C IF = 3.0 A Instantaneous forward voltage per diode VF (1) IF = 1.5 A TA = 25 °C Rated VR Typical junction capacitance per diode TA = 125 °C 4.0 V, 1 MHz TYP. MAX. 0.47 - UNIT 0.57 0.65 0.40 - 0.53 0.60 17 200 μA 6 20 mA 100 - pF V TA = 125 °C IF = 3.0 A Reverse current per diode SYMBOL IR (2) CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance per diode RJA SS6P4C (1) UNIT 80 °C/W RJL 4 Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS6P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS6P4C-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS6P4CHM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS6P4CHM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note Automotive grade (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89114 [email protected], [email protected], [email protected] Revision: 10-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS6P4C Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 7 Resistive or Inductive Load 6 5 4 3 2 TL Measured at the Cathode Band Terminal 1 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 0 0 25 50 75 100 125 150 10 175 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 1000 2.2 D = 0.3 2.0 D = 0.5 D = 0.8 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.2 1.8 1.6 D = 0.1 D = 1.0 1.4 1.2 1.0 T 0.8 0.6 0.4 D = tp/T 0.2 Junction Capacitance (pF) Average Power Loss (W) TA = 150 °C 10 100 tp 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode Instantaneous Forward Current (A) 10 TA = 150 °C TA = 125 °C 1 TA = 25 °C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Document Number: 89114 Revision: 10-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS6P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89114 [email protected], [email protected], [email protected] Revision: 10-May-11 This document is subject to change without notice. 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