VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors Ultrabright 0603 LED Description The new 0603 LED series have been designed in the smallest SMD package. This innovative 0603 LED technology opens the way to • smaller products of higher performance • more design in flexibility • enhanced applications The 0603 LED is an obvious solution for small-scale, high power products that are expected to work reliability in an arduous environment. 18562 e3 Pb Pb-free Features Applications • Smallest SMD package 0603 with exceptional brightness 1.6 mm x 0.8 mm x 0.6 mm (L x W x H) • High reliability lead frame based • Temperature range - 40 °C to + 100 °C • Footprint compatible to 0603 chipled • Wavelength 470 nm (blue), 570 nm (green), 560 nm (pure green), 587 nm (yellow), 606 nm orange), 633 nm (red) • AllnGaP and GaN technology • Viewing angle: extremely wide 160 ° • Grouping parameter: luminous intensity, wavelength • Available in 8 mm tape • IR reflow and TTW soldering • Lead-free device Backlight keypads Navigation systems Cellular phone displays Displays for industrial control systems Automotive features Miniaturized color effects Traffic displays Document Number 83173 Rev. 1.8, 30-Aug-04 Parts Table Part Color, Luminous Intensity TLMS1100 Red, IV = 63 mcd (typ.) TLMO1100 Orange, IV = 80 mcd (typ.) TLMY1100 Yellow, IV = 80 mcd (typ.) TLMG1100 Green, IV = 35 mcd (typ.) TLMP1100 Pure green, IV = 15 mcd (typ.) TLMB1100 Blue, IV = 5 mcd (typ.) www.vishay.com 1 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS1100 ,TLMO1100 ,TLMY1100 ,TLMG1100, TLMP1100 Parameter Test condition Symbol Value VR 12 V IF 30 mA IFSM 0.5 A PV 90 mW Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 75 °C Junction temperature Unit Tj 120 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature acc. Vishay spec Thermal resistance junction/ ambient mounted on PC board Tsd 260 °C RthJA 480 K/W Symbol Value Unit VR 5 V IF 15 mA IFSM 0.1 A PV 68 mW Tj 100 °C Tamb - 40 to + 100 °C Tstg - 40 to + 100 °C Tsd 260 °C RthJA 480 K/W (pad size > 5 mm2) TLMB1100 Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature acc. Vishay spec Thermal resistance junction/ ambient mounted on PC board (pad size > 5 mm2) Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS1100 Parameter Symbol Min Typ. IF = 20 mA IV 32 63 Dominant wavelength IF = 20 mA λd 627 Peak wavelength IF = 20 mA λp 645 Luminous intensity 2) Test condition 633 Angle of half intensity IF = 20 mA ϕ ± 80 Forward voltage IF = 20 mA VF 2.1 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) Unit mcd 639 nm nm deg 3.0 V V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 2 6 Max Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Orange TLMO1100 Parameter Symbol Min Typ. IF = 20 mA IV 50 80 Dominant wavelength IF = 20 mA λd 600 Peak wavelength IF = 20 mA λp 610 nm Angle of half intensity IF = 20 mA ϕ ± 80 deg Luminous intensity 2) Test condition Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 606 2.1 Max Unit mcd 609 3 6 nm V V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Yellow TLMY1100 Parameter Symbol Min Typ. IF = 20 mA IV 50 80 Dominant wavelength IF = 20 mA λd 580 Peak wavelength IF = 20 mA λp 591 nm Angle of half intensity IF = 20 mA ϕ ± 80 deg Luminous intensity 2) Test condition Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 587 2.1 Max Unit mcd 595 3 6 nm V V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Green TLMG1100 Parameter Luminous intensity 2) Symbol Min Typ. IF = 20 mA Test condition IV 12.5 35 564 Max Unit mcd Dominant wavelength IF = 20 mA λd Peak wavelength IF = 20 mA λp 572 nm Angle of half intensity IF = 20 mA ϕ ± 80 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 570 2.1 6 575 3.0 nm V V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 3 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Pure green TLMP1100 Parameter Luminous intensity 2) Symbol Min Typ. IF = 20 mA Test condition IV 6.3 15 551 Max Unit mcd Dominant wavelength IF = 20 mA λd Peak wavelength IF = 20 mA λp 555 nm Angle of half intensity IF = 20 mA ϕ ± 80 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 2) 558 2.1 566 3 6 nm V V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Blue TLMB1100 Parameter Luminous intensity 1) Symbol Min Typ. IF = 10 mA Test condition IV 2.8 5 Max mcd Unit nm Dominant wavelength IF = 10 mA λd 466 Peak wavelength IF = 10 mA λp 428 nm Angle of half intensity IF = 10 mA ϕ ± 80 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR 1) 4.5 V V in one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 4 3.9 5.0 Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Color Classification Group Dominant Wavelength (nm) Blue min Pure Green max -1 Green Yellow min max min max 551 554 564 565 Orange min max min max -2 460 464 554 557 566 569 580 583 600 603 -3 464 468 557 560 569 572 583 586 603 606 -4 468 472 560 563 572 575 586 589 606 609 -5 472 476 563 566 589 592 609 612 592 595 -6 Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm Luminous Intensity Classification Group Luminous Intensity (mcd) min max Pa 4 6.3 Pb 5 8 Qa 6.3 10 Qb 8 12.5 Ra 10 16 Rb 12.5 20 Sa 16 25 Sb 20 32 Ta 25 40 Tb 32 50 Ua 40 63 Ub 50 80 Va 63 100 125 Vb 80 Wa 100 160 Wb 125 200 Group Name on Label Luminous Intensity Group Halfgroup Wavelength Forward Voltage Q b 4 1 One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage Only one single classification groups is not available The given groups are not order codes, customer specific group combinations require marketing agreement No color subgrouping for Super Red Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 5 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 100 2.0 80 70 60 50 40 30 20 10 1.6 1.2 0.8 0.4 0 0 19107 20 40 60 80 100 0.0 –20 120 Figure 1. Power Dissipation vs. Ambient Temperature 2.40 Orange 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 V F –Forward Voltage ( V ) PV –Power Dissipation (mW) 35 25 20 15 10 5 0 0 19108 20 40 60 80 100 120 Tamb – Ambient Temperature ( qC ) IF = 20 mA 4 2 0 –2 –4 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 3. Change of Dominant Wavelength vs. Ambient Temperature www.vishay.com 6 80 100 IF = 20 mA 20 40 60 80 100 Figure 5. Forward Voltage vs. Ambient Temperature Orange I F – Forward Current ( mA ) n l d – Change of Dom. Wavelength (nm) 19081 60 100.00 Orange 6 –6 –20 40 Tamb – Ambient Temperature ( °C ) 19093 Figure 2. Power Dissipation vs. Ambient Temperature 8 20 Figure 4. Relative Luminous Intensity vs. Amb. Temperature 40 30 0 Tamb – Ambient Temperature ( °C ) 19088 Tamb – Ambient Temperature ( qC ) IF = 20 mA Orange IVrel–Relative Luminous Intensity PV –Power Dissipation (mW) 90 10.00 1.00 1.0 19099 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY n l d – Change of Dom. Wavelength (nm) Vishay Semiconductors I Vrel –Relative Luminous Intensity 10.00 Orange 1.00 0.10 0.01 1.00 10.00 100 1 0 –1 –2 –20 2.0 70 60 50 40 30 20 10 1.6 1.2 0.8 0.4 0 19105 20 40 60 80 100 0.0 –20 120 19090 Tamb – Ambient Temperature ( qC ) Figure 8. Power Dissipation vs. Ambient Temperature V F –Forward Voltage ( V ) PV –Power Dissipation (mW) Blue 10 5 0 0 19106 20 40 60 80 100 120 Tamb – Ambient Temperature ( qC ) Figure 9. Power Dissipation vs. Ambient Temperature Document Number 83173 Rev. 1.8, 30-Aug-04 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 11. Relative Luminous Intensity vs. Amb. Temperature 20 15 IF = 10 mA Blue IVrel–Relative Luminous Intensity 80 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 10. Change of Dominant Wavelength vs. Ambient Temperature Blue 90 PV –Power Dissipation (mW) 2 19082 Figure 7. Relative Luminous Intensity vs. Forward Current IF = 10 mA Blue 3 100.00 IF – Forward Current ( mA ) 19109 4 4.20 Blue 4.15 4.10 4.05 4.00 3.95 3.90 3.85 3.80 3.75 3.70 3.65 3.60 –20 0 19094 IF = 10 mA 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 12. Forward Voltage vs. Ambient Temperature www.vishay.com 7 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors 2.4 100.00 10.00 2.0 1.6 1.2 0.8 0.4 0.0 –20 1.00 2 3 4 5 6 19087 VF – Forward Voltage ( V ) 19100 Figure 13. Forward Current vs. Forward Voltage 2.40 Pure Green 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 20 I Vrel –Relative Luminous Intensity V F –Forward Voltage ( V ) Blue 0.10 0.01 1.00 10.00 100.00 IF – Forward Current ( mA ) 19110 IF = 20 mA 4 2 0 –2 –4 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 15. Change of Dominant Wavelength vs. Ambient Temperature www.vishay.com 8 40 60 80 100 100.00 Pure Green 6 –6 –20 IF = 20 mA Figure 17. Forward Voltage vs. Ambient Temperature Pure Green I F – Forward Current ( mA ) n l d – Change of Dom. Wavelength (nm) 19083 8 100 Tamb – Ambient Temperature ( °C ) 19095 Figure 14. Relative Luminous Intensity vs. Forward Current 10 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) Figure 16. Relative Luminous Intensity vs. Amb. Temperature 10.00 1.00 IF = 20 mA Pure Green IVrel–Relative Luminous Intensity I F – Forward Current ( mA ) Blue 10.00 1.00 1.0 19101 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 18. Forward Current vs. Forward Voltage Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors I Vrel –Relative Luminous Intensity 10.00 V F –Forward Voltage ( V ) Pure Green 2.40 IF = 20 mA Green 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 0 20 40 60 80 19096 Tamb – Ambient Temperature ( °C ) 1.00 0.10 0.01 1.00 10.00 100.00 IF – Forward Current ( mA ) 19111 10 8 100.00 IF = 20 mA Green Green 6 4 2 0 –2 –4 –6 –20 19084 Figure 22. Forward Voltage vs. Ambient Temperature I F – Forward Current ( mA ) n l d – Change of Dom. Wavelength (nm) Figure 19. Relative Luminous Intensity vs. Forward Current 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 10.00 1.00 1.0 19089 I Vrel –Relative Luminous Intensity IVrel–Relative Luminous Intensity 1.6 1.2 0.8 0.4 20 40 60 80 Tamb – Ambient Temperature ( °C ) Rev. 1.8, 30-Aug-04 3.0 Green 1.00 0.10 0.01 1.00 100 Figure 21. Relative Luminous Intensity vs. Amb. Temperature Document Number 83173 2.5 10.00 IF = 20 mA 2.0 0 2.0 VF – Forward Voltage ( V ) Figure 23. Forward Current vs. Forward Voltage 2.4 Green 1.5 19102 Figure 20. Change of Dominant Wavelength vs. Ambient Temperature 0.0 –20 100 19112 10.00 100.00 IF – Forward Current ( mA ) Figure 24. Relative Luminous Intensity vs. Forward Current www.vishay.com 9 TLMB / G / O / P / S / Y1100 VISHAY n l d – Change of Dom. Wavelength (nm) Vishay Semiconductors 8 100.00 IF = 20 mA Yellow Yellow I F – Forward Current ( mA ) 6 4 2 0 –2 –4 –6 –20 19085 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 10.00 1.00 1.0 Figure 25. Change of Dominant Wavelength vs. Ambient Temperature I Vrel –Relative Luminous Intensity IVrel–Relative Luminous Intensity 1.2 0.8 0.4 19092 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) 0 20 60 80 Tamb – Ambient Temperature ( °C ) 10 0.01 1.00 10.00 100.00 IF – Forward Current ( mA ) Figure 29. Relative Luminous Intensity vs. Forward Current 100 Figure 27. Forward Voltage vs. Ambient Temperature www.vishay.com 0.10 19114 IF = 20 mA 40 1.00 n l d – Change of Dom. Wavelength (nm) V F –Forward Voltage ( V ) 19097 Yellow 3.0 Yellow 100 Figure 26. Relative Luminous Intensity vs. Amb. Temperature 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 –20 2.5 10.00 IF = 20 mA 1.6 0.0 –20 2.0 VF – Forward Voltage ( V ) Figure 28. Forward Current vs. Forward Voltage 2.0 Yellow 1.5 19104 19086 4 3 Red IF = 20 mA 2 1 0 –1 –2 –3 –4 –20 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 30. Change of Dominant Wavelength vs. Ambient Temperature Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors 2.0 I Vrel –Relative Luminous Intensity IVrel–Relative Luminous Intensity 10.00 IF = 20 mA Red 1.6 1.2 0.8 0.4 0.0 –20 19091 0 20 40 60 80 Tamb – Ambient Temperature ( °C ) V F –Forward Voltage ( V ) 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 –20 Red 0 1.00 0.10 0.01 1.00 100 19113 Figure 31. Relative Luminous Intensity vs. Amb. Temperature Red 10.00 100.00 IF – Forward Current ( mA ) Figure 34. Relative Luminous Intensity vs. Forward Current IF = 20 mA 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 19098 Figure 32. Forward Voltage vs. Ambient Temperature 100.00 I F – Forward Current ( mA ) Red 10.00 1.00 1.0 19103 1.5 2.0 2.5 3.0 VF – Forward Voltage ( V ) Figure 33. Forward Current vs. Forward Voltage Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 11 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Reel Dimensions 19043 www.vishay.com 12 Document Number 83173 Rev. 1.8, 30-Aug-04 VISHAY TLMB / G / O / P / S / Y1100 Vishay Semiconductors Tape Dimensions 19044 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 13 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Package Dimensions in mm 18561 www.vishay.com 14 Document Number 83173 Rev. 1.8, 30-Aug-04 TLMB / G / O / P / S / Y1100 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83173 Rev. 1.8, 30-Aug-04 www.vishay.com 15