TLC.52.. VISHAY Vishay Semiconductors High Intensity LED, ∅ 5 mm 30 ° Untinted Non-Diffused \ 94 8631 Description The TLC.52.. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP and InGaN technologies. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. Features • Untinted non diffused lens • Utilizing ultrabright AllnGaP and InGaN technology • High luminous intensity • High operating temperature: Tj (chip junction temperature) up to 125 °C for AllnGaP devices • Luminous intensity and color categorized for each packing unit • ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AllnGaP, 1 kV for InGaN Applications Interior and exterior lighting Outdoor LED panels Instrumentation and front panel indicators Central high mounted stop lights (CHMSL) for motor vehicles Replaces incandescent lamps Traffic signals Light guide design Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLCR5200 Red, IV > 1350 mcd 15 AllnGaP on GaAs TLCY5200 Yellow, IV > 1350 mcd 15 AllnGaP on GaAs TLCTG5200 True green, IV > 750 mcd 15 InGaN on SiC TLCB5200 Blue, IV > 240 mcd 15 InGaN on SiC Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 1 TLC.52.. VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLCR5200 , TLCY5200 Parameter Test condition Reverse voltage DC forward current Tamb ≤ 85 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 85 °C Symbol Value VR 5 Unit V IF 50 mA IFSM 1 A PV 135 mW Junction temperature Tj 125 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Tsd 260 °C RthJA 300 K/W Symbol Value Unit VR 5 V IF 30 mA TLCTG5200 , TLCB5200 Parameter Test condition Reverse voltage DC forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60°C IFSM 0.1 A PV 135 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Tsd 260 °C RthJA 300 K/W Junction temperature Soldering temperature t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLCR5200 Parameter Luminous intensity 1) Test condition IF = 50 mA Part Symbol Min Typ. TLCR5200 IV 1350 4000 611 616 Max Unit mcd Dominant wavelength IF = 50 mA λd Peak wavelength IF = 50 mA λp 622 nm Spectral bandwidth at 50 % Irel max IF = 50 mA ∆λ 18 nm Angle of half intensity IF = 50 mA ϕ ± 15 Forward voltage IF = 50 mA VF 2.1 Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 50 mA TC VF - 3.5 mV/K Temperature coefficient of λd IF = 50 mA TCλd 0.05 nm/K 1) nm deg 2.7 V V in one Packing Unit IVMax./IVMin. ≤ 2.0 www.vishay.com 2 5 622 Document Number 83210 Rev. 5, 08-Apr-03 TLC.52.. VISHAY Vishay Semiconductors Yellow TLCY5200 Parameter Luminous intensity 1) Test condition IF = 50 mA Part Symbol Min Typ. TLCY5200 IV 1350 4000 585 590 Max Unit mcd Dominant wavelength IF = 50 mA λd Peak wavelength IF = 50 mA λp 593 nm Spectral bandwidth at 50 % Irel max IF = 50 mA ∆λ 17 nm Angle of half intensity IF = 50 mA ϕ ± 15 deg Forward voltage IF = 50 mA VF Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 50 mA TC VF - 3.5 mV/K Temperature coefficient of λd IF = 50 mA TCλd 0.1 nm/K 1) 2.1 597 2.7 5 nm V V in one Packing Unit IVMax./IVMin. ≤ 2.0 True green TLCTG5200 Parameter Luminous intensity 1) Test condition IF = 30 mA Part Symbol Min Typ. TLCTG5200 IV 750 2000 515 525 Max Unit mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 520 nm Spectral bandwidth at 50 % Irel max IF = 30 mA ∆λ 37 nm Angle of half intensity IF = 30 mA ϕ ± 15 deg Forward voltage IF = 30 mA VF Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 30 mA TC VF - 4.5 mV/K Temperature coefficient of λd IF = 30 mA TCλd 0.02 nm/K 1) 3.9 535 4.5 5 nm V V in one Packing Unit IVMax./IVMin. ≤ 2.0 Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Blue TLCB5200 Parameter Luminous intensity 1) Test condition IF = 30 mA Part Symbol Min Typ. TLCB5200 IV 240 700 462 470 Max Unit mcd Dominant wavelength IF = 30 mA λd Peak wavelength IF = 30 mA λp 464 nm Spectral bandwidth at 50 % Irel max IF = 50 mA ∆λ 25 nm Angle of half intensity IF = 30 mA ϕ ± 15 Forward voltage IF = 30 mA VF 3.9 Reverse voltage IR = 10 µA VR Temperature coefficient of VF IF = 30 mA TC VF - 5.0 mV/K Temperature coefficient of λd IF = 30 mA TCλd 0.02 nm/K 1) 5 476 nm deg 4.5 V V in one Packing Unit IVMax./IVMin. ≤ 2.0 Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 3 TLC.52.. VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 60 140 I F–Forward Current ( mA ) PV –Power Dissipation (mW) 160 120 Yellow Red 100 80 60 40 20 50 Blue Truegreen 40 30 20 10 0 0 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) 16708 0 120 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16711 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Ambient Temperature 0q 10q 20q 30q I v rel – Relative Luminous Intensity PV –Power Dissipation (mW) 160 140 120 Blue Truegreen 100 80 60 40 20 40q 1.0 0.9 50q 0.8 60q 70q 0.7 80q 0 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16709 0.6 0.4 0.2 0 0.2 0.4 0.6 17534 Figure 2. Power Dissipation vs. Ambient Temperature Figure 5. Rel. Luminous Intensity vs. Angular Displacement 60 100 40 I F – Forward Current ( mA ) I F–Forward Current ( mA ) 90 50 Yellow Red 30 20 10 0 0 16710 20 40 60 80 100 120 Tamb – Ambient Temperature ( °C ) Figure 3. Forward Current vs. Ambient Temperature www.vishay.com 4 15974 80 Red Yellow 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F – Forward Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage Document Number 83210 Rev. 5, 08-Apr-03 TLC.52.. VISHAY Vishay Semiconductors 10.00 I Vrel– Relative Luminous Intensity 100 90 I F – Forward Current ( mA ) 80 Blue Truegreen 70 60 50 40 30 20 10 True Green 1.00 0.10 0.01 1 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VF – Forward Voltage ( V ) 16040 10.00 I Vrel– Relative Luminous Intensity 10.00 I Vrel– Relative Luminous Intensity 100 Figure 10. Relative Luminous Flux vs. Forward Current Figure 7. Forward Current vs. Forward Voltage Red 1.00 0.10 0.01 1 10 IF – Forward Current ( mA ) 15978 Blue 1.00 0.10 0.01 1 100 16042 I Vrel– Relative Luminous Intensity 10.00 Yellow 1.00 0.10 0.01 1 15979 10 IF - Forward Current ( mA ) 100 Figure 9. Relative Luminous Flux vs. Forward Current Document Number 83210 Rev. 5, 08-Apr-03 10 IF – Forward Current ( mA ) 100 Figure 11. Relative Luminous Flux vs. Forward Current Figure 8. Relative Luminous Flux vs. Forward Current IV rel - Relative Luminous Intensity 10 IF – Forward Current ( mA ) 16039 16007 1.2 Red IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 l – Wavelength ( nm ) Figure 12. Relative Intensity vs. Wavelength www.vishay.com 5 TLC.52.. VISHAY I Vrel– Relative Luminous Intensity Vishay Semiconductors 1.2 Yellow IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 l – Wavelength ( nm ) 16008 IVrel– Relative Luminous Intensity Figure 13. Relative Intensity vs. Wavelength 16068 1.2 True Green IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 l – Wavelength ( nm ) I rel – Relative Intensity Figure 14. Relative Intensity vs. Wavelength 17539 1.2 Blue IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 420 440 460 480 500 520 540 560 l – Wavelength ( nm ) Figure 15. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 83210 Rev. 5, 08-Apr-03 TLC.52.. VISHAY Vishay Semiconductors Package Dimensions in mm 14339 Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 7 TLC.52.. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83210 Rev. 5, 08-Apr-03