TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors SMD LED in PLCC-2 Package Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLM.310. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. 19225 Features Pb-free • SMD LEDs with exceptional brightness • • • • • • • • • • Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 1.6 Lead-free device e3 Pb Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLMH3100 Red, IV > 2.5 mcd 60 ° GaAsP on GaP TLMH3101 Red, IV = (4 to 12.5) mcd 60 ° GaAsP on GaP TLMH3102 Red, IV = (6.3 to 20) mcd 60 ° GaAsP on GaP TLMO3100 Soft orange, IV > 2.5 mcd 60 ° GaAsP on GaP TLMO3101 Soft orange, IV = (4 to 12.5) mcd 60 ° GaAsP on GaP TLMY3100 Yellow, IV > 2.5 mcd 60 ° GaAsP on GaP TLMY3102 Yellow, IV = (6.3 to 20) mcd 60 ° GaAsP on GaP TLMG3100 Green, IV > 4 mcd 60 ° GaP on GaP TLMG3102 Green, IV = (10 to 20) mcd 60 ° GaP on GaP Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 1 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology TLMG3105 Green, IV = (6.3 to 20) mcd 60 ° GaP on GaP TLMP3100 Pure green, IV > 1 mcd 60 ° GaP on GaP TLMP3101 Pure green, IV = (1.6 to 5) mcd 60 ° GaP on GaP TLMP3107 Pure green, IV = (2.5 to 5) mcd 60 ° GaP on GaP TLMP3102 Pure green, IV = (2.5 to 8) mcd 60 ° GaP on GaP Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMG310. ,TLMH310. TLMO310. ,TLMP310. ,TLMY310. Parameter Test condition Symbol Value VR 6 V IF 30 mA Reverse voltage DC forward current Tamb ≤ 60 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 60 °C Unit IFSM 0.5 A PV 100 mW Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 400 K/W Junction temperature Soldering temperature t≤5s Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMH310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLMH3100 IV 2.5 6 TLMH3101 IV 4 Max Unit mcd 12.5 mcd IV 6.3 20 mcd Dominant wavelength IF = 10 mA λd 612 625 nm Peak wavelength IF = 10 mA λp 635 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj TLMH3102 1) V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 www.vishay.com 2 6 2.8 Document Number 83032 Rev. 1.7, 31-Aug-04 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors Soft Orange TLMO310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLMO3100 IV 2.5 8 Max Unit mcd IV 4 12.5 mcd Dominant wavelength IF = 10 mA λd 598 611 nm Peak wavelength IF = 10 mA λp 605 TLMO3101 Angle of half intensity IF = 10 mA ϕ ± 60 Forward voltage IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 nm deg 2.8 V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Yellow TLMY310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLMY3100 IV 2.5 6 TLMY3102 Max Unit mcd IV 6.3 20 mcd Dominant wavelength IF = 10 mA λd 581 594 nm Peak wavelength IF = 10 mA λp 585 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF 2.1 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 2.8 V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Green TLMG310. Parameter Luminous intensity 1) Test condition IF = 10 mA Part Symbol Min Typ. TLMG3100 IV 4 9 TLMG3102 IV 10 Max Unit mcd 20 mcd IV 6.3 20 mcd Dominant wavelength IF = 10 mA λd 562 575 nm Peak wavelength IF = 10 mA λp 565 TLMG3105 Angle of half intensity IF = 10 mA ϕ ± 60 Forward voltage IF = 20 mA VF 2.2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 nm deg 2.8 V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 3 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors Pure green TLMP310. Parameter Luminous intensity Test condition IF = 10 mA 1) Part Symbol Min Typ. TLMP3100 IV 1 4 Max Unit TLMP3101 IV 1.6 5 mcd TLMP3102 IV 2.5 8 mcd TLMP3107 IV 2.5 5 mcd 555 565 nm mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 555 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 2.1 6 2.8 V 15 V 15 pF in one Packing Unit IVmax/IVmin ≤ 1.6 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I F - Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 0 0 20 40 60 80 0.01 1000 0.02 0.05 100 0.2 0.5 DC 0.1 10 1 0.01 100 Tamb - Ambient Temperature ( °C ) 95 10904 0.1 1 Figure 3. Pulse Forward Current vs. Pulse Duration 0° I V re l - Relative Luminous Intensity IF - Forward Current ( mA) 60 50 40 30 20 10 0 20 40 60 80 Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 4 20° 30° 40° 0.9 50° 0.8 60° 70° 0.7 80° 0.6 100 Tamb - Ambient Temperature ( °C ) 10° 1.0 0 95 10905 100 10 t p - Pulse Length ( ms ) 95 9985 Figure 1. Power Dissipation vs. Ambient Temperature Tamb < 60°C t p /T = 0.005 0.4 0.2 0 0.2 0.4 0.6 95 10319 Figure 4. Rel. Luminous Intensity vs. Angular Displacement Document Number 83032 Rev. 1.7, 31-Aug-04 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors I v rel - Relative Luminous Intensity 100 I F - Forward Current ( mA ) Red 10 1 0.1 Red 1 0.1 0.01 0 1 2 3 4 5 V F - Forward Voltage ( V ) 95 9989 1 100 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current 1.2 I V re l - Relative Luminous Intensity 2.0 Red 1.6 1.2 0.8 0.4 Red 1.0 0.8 0.6 0.4 0.2 0 590 0 0 20 40 60 80 100 Tamb - Ambient Temperature (° C ) 95 9993 610 630 650 670 690 λ -ı Wavelength ( nm ) 95 10040 Figure 9. Relative Intensity vs. Wavelength Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 100 2.4 Soft Orange Red I F - Forward Current ( mA ) I V re l - Relative Luminous Intensity 10 95 9995 Figure 5. Forward Current vs. Forward Voltage I v rel - Relative Luminous Intensity 10 2.0 1.6 1.2 0.8 10 1 0.4 0.1 0 95 10321 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 Rev. 1.7, 31-Aug-04 1 2 3 4 5 V F - Forward Voltage ( V ) tp /T Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Document Number 83032 95 9990 Figure 10. Forward Current vs. Forward Voltage www.vishay.com 5 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors 1.2 IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 2.0 Soft Orange 1.6 1.2 0.8 0.4 Soft Orange 1.0 0.8 0.6 0.4 0.2 0 570 0 0 20 40 60 80 100 Tamb - Ambient Temperature (° C ) 95 9994 650 670 100 - Forward Current ( mA ) Soft Orange 2.0 1.6 1.2 10 1 F 0.8 Yellow I I V re l - Relative Luminous Intensity 630 Figure 14. Relative Intensity vs. Wavelength 2.4 0.4 0 10 1 95 10259 20 0.5 50 0.2 100 0.1 200 0.05 0.1 500 I F (mA) 0.02 tp /T 0 1 2 3 4 5 V F - Forward Voltage ( V ) 95 9987 Figure 12. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Figure 15. Forward Current vs. Forward Voltage 2.0 10 I v rel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 610 λ - Wavelength ( nm ) 95 10324 Figure 11. Rel. Luminous Intensity vs. Ambient Temperature Soft Orange 1 0.1 Yellow 1.6 1.2 0.8 0.4 0 0.01 1 95 9997 10 100 I F - Forward Current ( mA ) Figure 13. Relative Luminous Intensity vs. Forward Current www.vishay.com 6 590 95 9992 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 16. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83032 Rev. 1.7, 31-Aug-04 TLMG / H / O / P / Y310. VISHAY 2.4 100 Yellow 2.0 1.6 1.2 0.8 0.4 0 10 20 50 100 200 500 I F (mA) 1 0.5 0.2 0.1 0.05 0.02 95 10260 Green I F - Forward Current ( mA ) I v rel - Relative Luminous Intensity Vishay Semiconductors tp /T 10 1 0.1 0 4 5 2.0 I v rel - Relative Luminous Intensity 10 I v rel - Relative Luminous Intensity 3 Figure 20. Forward Current vs. Forward Voltage Yellow 1 0.1 Green 1.6 1.2 0.8 0.4 0 0.01 1 10 100 I F - Forward Current ( mA ) 95 9999 0 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) 95 10320 Figure 18. Relative Luminous Intensity vs. Forward Current Figure 21. Rel. Luminous Intensity vs. Ambient Temperature 1.2 2.4 Yellow 1.0 I v rel - Specific Luminous Intensity IVrel - Relative Luminous Intensity 2 V F - Forward Voltage ( V ) 95 9986 Figure 17. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle 0.8 0.6 0.4 0.2 0 550 95 10039 1 570 590 610 630 Figure 19. Relative Intensity vs. Wavelength Document Number 83032 Rev. 1.7, 31-Aug-04 1.6 1.2 0.8 0.4 0 650 λ - Wavelength ( nm ) Green 2.0 95 10263 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T Figure 22. Specific Luminous Intensity vs. Forward Current www.vishay.com 7 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors 2.0 I v rel - Relative Luminous Intensity 10 I Vrel - Relative Luminous Intensity Green 1 0.1 1.6 1.2 0.8 0.4 0 0.01 1 10 100 I F - Forward Current ( mA ) 95 9996 40 60 80 100 Tamb − Ambient Temperature ( °C ) 2.4 Green Pure Green I Spec - Specific Luninous Flux 1.0 0.8 0.6 0.4 0.2 0 520 2.0 1.6 1.2 0.8 0.4 0 540 560 580 600 620 λ - Wavelength ( nm ) 95 10038 10 95 10261 Figure 24. Relative Intensity vs. Wavelength 100 1000 I F - Forward Current ( mA ) Figure 27. Specific Luminous Intensity vs. Forward Current 10 I Vrel - Relative Luminous Intensity 100 Pure Green I F – Forward Current ( mA ) 20 Figure 26. Rel. Luminous Intensity vs. Ambient Temperature 1.2 10 1 Pure Green 1 0.1 0.01 0.1 0 1 2 3 4 Figure 25. Forward Current vs. Forward Voltage www.vishay.com 1 5 V F – Forward Voltage ( V ) 95 9988 8 0 95 9991 Figure 23. Relative Luminous Intensity vs. Forward Current IVrel - Relative Luminous Intensity Pure Green 95 9998 10 100 I F - Forward Current ( mA ) Figure 28. Relative Luminous Intensity vs. Forward Current Document Number 83032 Rev. 1.7, 31-Aug-04 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors I Vrel - Relative Luminous Intensity 1.2 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500 520 540 560 580 600 λ - Wavelength ( nm ) 95 10325 Figure 29. Relative Intensity vs. Wavelength Package Dimensions in mm 3.5 ± 0.2 0.85 + 0.10 1.65- 0.05 technical drawings according to DIN specifications Mounting Pad Layout Pin identification area covered with solder resist 4 2.6 (2.8) A 2.2 C 2.8 + 0.15 1.2 4 1.6 (1.9) ∅ 2.4 3 + 0.15 Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5025.01-4 Issue: 7; 05.04.04 95 11314 Document Number 83032 Rev. 1.7, 31-Aug-04 www.vishay.com 9 TLMG / H / O / P / Y310. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83032 Rev. 1.7, 31-Aug-04