VISHAY TLMS1000

TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Low Current 0603 LED
Description
The new 0603 LED series have been designed in the
smallest SMD package. This innovative 0603 LED
technology opens the way to
• smaller products of higher performance
• more design in flexibility
• enhanced applications
The 0603 LED is an obvious solution for small-scale,
high power products that are expected to work reliability in an arduous environment.
18562
e3 Pb
Pb-free
Features
Applications
• Smallest SMD package 0603 with exceptional
brightness 1.6 mm x 0.8 mm x 0.6 mm (L x W x H)
• High reliability lead frame based
• Temperature range - 40 °C to + 100 °C
• Footprint compatible to 0603 chipled
• Wavelength 633 nm (red), 606 nm (orange),
587 nm (yellow)
• AllnGaP and InGaN technology
• Viewing angle: extremely wide 160 °
• Grouping parameter: luminous intensity,
wavelength
• Available in 8 mm tape
• Lead-free device
Backlight keypads
Navigation systems
Cellular phone displays
Displays for industrial control systems
Automotive features
Miniaturized color effects
Traffic displays
Parts Table
Part
Color, Luminous Intensity
TLMS1000
Red, IV = 4 mcd (typ.)
TLMO1000
Soft Orange, IV = 8 mcd (typ.)
TLMY1000
Yellow, IV = 6.5 mcd (typ.)
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
TLMS1000 ,TLMO1000 ,TLMY1000
Parameter
Test condition
Reverse voltage
DC Forward current
Tamb ≤ 95 °C
Surge forward current
tp ≤ 10 µs
Power dissipation
Tamb ≤ 95 °C
Junction temperature
Symbol
Value
VR
12
Unit
V
IF
15
mA
IFSM
0.1
A
PV
40
mW
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Tsd
260
°C
RthJA
500
K/W
Soldering temperature
acc. Vishay spec
Thermal resistance junction/
ambient
mounted on PC board
Document Number 83172
Rev. 1.3, 30-Aug-04
(pad size > 5 mm2)
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1
TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Optical and Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Red
TLMS1000
Parameter
Symbol
Min
Typ.
IF = 2 mA
IV
1.6
4
Dominant wavelength
IF = 2 mA
λd
624
628
Peak wavelength
IF = 2 mA
λp
640
nm
Angle of half intensity
IF = 2 mA
ϕ
± 80
deg
Luminous intensity
2)
Test condition
Forward voltage
IF = 2 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
1.8
Max
Unit
mcd
636
2.6
6
nm
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 1.6
Soft Orange
TLMO1000
Parameter
Symbol
Min
Typ.
IF = 2 mA
IV
3.2
7.5
Dominant wavelength
IF = 2 mA
λd
600
605
Peak wavelength
IF = 2 mA
λp
610
nm
Angle of half intensity
IF = 2 mA
ϕ
± 80
deg
Luminous intensity
2)
Test condition
Forward voltage
IF = 2 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
1.8
Max
Unit
mcd
609
2.6
6
nm
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 1.6
Yellow
TLMY1000
Parameter
Symbol
Min
Typ.
IF = 2 mA
IV
3.2
7.5
Dominant wavelength
IF = 2 mA
λd
580
588
Peak wavelength
IF = 2 mA
λp
591
nm
Angle of half intensity
IF = 2 mA
ϕ
± 80
deg
Luminous intensity
2)
Test condition
Forward voltage
IF = 2 mA
VF
Reverse voltage
IR = 10 µA
VR
Junction capacitance
VR = 0, f = 1 MHz
Cj
2)
Unit
mcd
595
2.6
nm
V
V
15
pF
in one Packing Unit IVmax/IVmin ≤ 1.6
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2
1.8
6
Max
Document Number 83172
Rev. 1.3, 30-Aug-04
TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Color Classification
Group
Dominant Wavelength (nm)
Yellow
Orange
min
max
min
max
2
580
583
600
603
3
583
586
602
605
4
586
589
604
607
5
589
592
606
609
6
592
595
1
Luminous Intensity Classification
Group
Luminous Intensity (mcd)
min
max
Ma
1.6
2.5
Mb
2
3.2
Na
2.5
4
Nb
3.2
5
Pa
4
6.3
Pb
5
8
Qa
6.3
10
Qb
8
12.5
Ra
10
16
Rb
12.5
20
Sa
16
25
Sb
20
32
Group Name on Label
Luminous Intensity Group
Halfgroup
Wavelength
Forward Voltage
Q
b
4
1
One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage
Only one single classification groups is not available
The given groups are not order codes, customer specific group combinations require marketing agreement
No color subgrouping for Super Red
Document Number 83172
Rev. 1.3, 30-Aug-04
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TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
10
Orange
I F - Forward Current ( mA )
PV –Power Dissipation (mW)
60
55
50
45
40
35
30
25
20
15
10
5
0
1
0.1
0
19146
20
40
60
80
100
120
Tamb – Ambient Temperature ( qC )
1
Figure 1. Power Dissipation vs. Ambient Temperature
λ d - Dominant Wavelength ( nm )
PV –Power Dissipation (mW)
1
15
10
5
0
0
19147
20
40
60
80
100
Orange
1
0.1
19127
1
10
IF - Forward Current ( mA )
Figure 3. Relative Luminous Intensity vs. Forward Current
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4
3
Orange
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
1
IF - Forward Current ( mA )
10
Figure 5. Dominant Wavelength vs. Forward Current
n l d – Change of Dom. Wavelength (nm)
I Vrel - Relative Luminous Intensity
10
2.5
0.6
19133
Figure 2. Power Dissipation vs. Ambient Temperature
0.01
0.1
0.8
-1
0.1
120
Tamb – Ambient Temperature ( qC )
2
Figure 4. Forward Current vs. Forward Voltage
25
20
1.5
VF - Forward Voltage ( V )
19130
19136
8
Orange
6
4
2
0
–2
–4
–6
–20
0
20
40
60
80
100
Tamb – Ambient Temperature ( qC )
Figure 6. Change of Dominant Wavelength vs. Ambient
Temperature
Document Number 83172
Rev. 1.3, 30-Aug-04
TLMO / S / Y1000
VISHAY
Vishay Semiconductors
10
IF = 2 mA
Yellow
I F - Forward Current ( mA )
I Vrel - Relative Luminous Intensity
2.4
Orange
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20
0
20
40
60
80
0.1
100
Tamb - Ambient Temperature ( °C )
19139
1
1
λ d - Dominant Wavelength ( nm )
V F - Forward Voltage ( V )
1
IF = 20 mA
20
40
60
80
1.00
0.10
19128
1.00
Figure 9. Relative Luminous Intensity vs. Forward Current
Document Number 83172
Rev. 1.3, 30-Aug-04
0
-0.2
-0.4
-0.6
-0.8
1
IF - Forward Current ( mA )
10
Figure 11. Dominant Wavelength vs. Forward Current
10.00
IF – Forward Current ( mA )
Yellow
0.2
∆ λ d - Change of Dom. Wavelength (nm)
I Vrel –Relative Luminous Intensity
Yellow
3
0.4
19134
10.00
2.5
0.6
-1
0.1
Figure 8. Forward Voltage vs. Ambient Temperature
0.01
0.10
0.8
100
Tamb - Ambient Temperature ( °C )
19143
2
Figure 10. Forward Current vs. Forward Voltage
Figure 7. Relative Luminous Intensity vs. Amb. Temperature
2.20
Orange
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
–20
0
1.5
VF - Forward Voltage ( V )
19131
19137
10
8
Yellow
6
4
2
0
-2
-4
-6
-20
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 12. Change of Dominant Wavelength vs. Ambient
Temperature
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TLMO / S / Y1000
VISHAY
Vishay Semiconductors
10
IF = 2 mA
Red
I F - Forward Current ( mA )
I Vrel - Relative Luminous Intensity
2.4
Yellow
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20
0
20
40
60
80
0.1
100
Tamb - Ambient Temperature ( °C )
19141
1
1
Figure 13. Relative Luminous Intensity vs. Amb. Temperature
1
IF = 20 mA
20
40
60
80
1
0.1
19129
1
6
0.2
0
-0.2
-0.4
-0.6
-0.8
1
IF - Forward Current ( mA )
10
IF - Forward Current ( mA )
Figure 17. Dominant Wavelength vs. Forward Current
6
Red
4
2
0
-2
-4
-20
10
Figure 15. Relative Luminous Intensity vs. Forward Current
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0.4
ı λ - Change of Dom. Wavelength (nm)
∆
d
I Vrel - Relative Luminous Intensity
Red
3
0.6
19135
10
2.5
Red
-1
0.1
Figure 14. Forward Voltage vs. Ambient Temperature
0.01
0.1
0.8
100
Tamb - Ambient Temperature ( °C )
19144
2
Figure 16. Forward Current vs. Forward Voltage
λ d - Dominant Wavelength ( nm )
V F - Forward Voltage ( V )
2.20
Yellow
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
-20
0
1.5
VF - Forward V oltage ( V )
19132
19138
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 18. Change of Dominant Wavelength vs. Ambient
Temperature
Document Number 83172
Rev. 1.3, 30-Aug-04
TLMO / S / Y1000
VISHAY
Vishay Semiconductors
I Vrel - Relative Luminous Intensity
2.4
Red
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20
0
19142
IF = 2 mA
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 19. Relative Luminous Intensity vs. Amb. Temperature
V F - Forward Voltage ( V )
2.00
1.95
IF = 20 mA
Red
1.90
1.85
1.80
1.75
1.70
1.65
1.60
-20
19145
0
20
40
60
80
100
Tamb - Ambient Temperature ( °C )
Figure 20. Forward Voltage vs. Ambient Temperature
Document Number 83172
Rev. 1.3, 30-Aug-04
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TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Reel Dimensions
19043
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Document Number 83172
Rev. 1.3, 30-Aug-04
VISHAY
TLMO / S / Y1000
Vishay Semiconductors
Tape Dimensions
19044
Document Number 83172
Rev. 1.3, 30-Aug-04
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TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Package Dimensions in mm
18561
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Document Number 83172
Rev. 1.3, 30-Aug-04
TLMO / S / Y1000
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83172
Rev. 1.3, 30-Aug-04
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