TLHE / G / K / P510. VISHAY Vishay Semiconductors High Intensity LED, ∅ 5 mm Untinted Non-Diffused Description The TLH.51.. series is a clear, non diffused 5 mm LED for outdoor application. These clear lamps utilize the highly developed technologies like AlInGaP and GaP. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. The subtypes TLH.5101 and TLH.5102 with their very stable light output are especially recommended for applications where a homogeneous appearance is required. e2 Pb 19223 Pb-free Features Applications • Untinted non diffused lens • Choice of four colors • TLH.5101 and TLH.5102 with reduced light matching factor • TLH.5100 for cost effective design • Medium viewing angle • Lead-free device Outdoor LED panels Central high mounted stop lights (CHMSL) for motor vehicles Instrumentation and front panel indicators Light guide design Traffic signals Parts Table Part TLHK5100 Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology Red, IV > 320 mcd 9° AllnGaP on GaAs TLHE5100 Yellow, IV > 750 mcd 9° AllnGaP on GaAs TLHG5100 Green, IV > 240 mcd 9° GaP on GaP TLHG5101 Green, IV > 240 mcd 9° GaP on GaP TLHG5102 Green, IV > 240 mcd 9° GaP on GaP TLHP5100 Pure green, IV > 66 mcd 9° GaP on GaP TLHP5101 Pure green, IV > 66 mcd 9° GaP on GaP TLHP5102 Pure green, IV > 66 mcd 9° GaP on GaP Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLHK51.. , TLHE51.. , TLHG51.. , TLHP51.. Parameter Test condition Reverse voltage DC Forward current Tamb ≤ 65 °C Surge forward current tp ≤ 10 µs Power dissipation Tamb ≤ 65 °C Junction temperature Document Number 83010 Rev. 1.9, 31-Aug-04 Symbol Value Unit VR 6 V IF 30 mA IFSM 1 A PV 100 mW Tj 100 °C www.vishay.com 1 TLHE / G / K / P510. VISHAY Vishay Semiconductors Symbol Value Unit Operating temperature range Parameter Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Soldering temperature Test condition t ≤ 5 s, 2 mm from body Thermal resistance junction/ ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLHK51.. Parameter Test condition Part Symbol Min TLHK5100 IV 320 IF = 10 mA λd 626 Peak wavelength IF = 10 mA λp 643 nm Angle of half intensity IF = 10 mA ϕ ±9 deg Forward voltage IF = 20 mA VF 1.9 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj Luminous intensity 1) IF = 20 mA Dominant wavelength 1) Typ. Max Unit mcd 630 639 2.6 5 nm V V 15 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Yellow TLHE51.. Parameter Test condition Part Symbol Min TLHE5100 IV 750 IF = 10 mA λd 581 Peak wavelength IF = 10 mA λp 590 nm Angle of half intensity IF = 10 mA ϕ ±9 deg Forward voltage IF = 20 mA VF 2 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj Luminous intensity 1) IF = 20 mA Dominant wavelength 1) Max Unit mcd 588 594 2.6 5 nm V V 15 pF in one Packing Unit IVmin/IVmax ≤ 0.5 www.vishay.com 2 Typ. Document Number 83010 Rev. 1.9, 31-Aug-04 TLHE / G / K / P510. VISHAY Vishay Semiconductors Green TLHG51.. Parameter Luminous intensity Test condition IF = 20 mA 1) Part Symbol Min TLHG5100 IV 240 Typ. Max Unit TLHG5101 IV 240 480 mcd TLHG5102 IV 240 640 mcd 562 575 nm mcd Dominant wavelength IF = 10 mA λd Peak wavelength IF = 10 mA λp 565 nm Angle of half intensity IF = 10 mA ϕ ±9 deg Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Pure green TLHP51.. Parameter Test condition IF = 20 mA Luminous intensity 1) Part Symbol Min TLHP5100 IV 66 Typ. Max Unit TLHP5101 IV 66 132 mcd mcd IV 66 200 mcd Dominant wavelength IF = 10 mA λd 555 565 nm Peak wavelength IF = 10 mA λp TLHP5102 555 Angle of half intensity IF = 10 mA ϕ ±9 Forward voltage IF = 20 mA VF 2.4 Reverse voltage IR = 10 µA VR Junction capacitance VR = 0, f = 1 MHz Cj 1) 6 nm deg 3 V 15 V 50 pF in one Packing Unit IVmin/IVmax ≤ 0.5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 60 I F - Forward Current ( mA ) PV - Power Dissipation ( mW ) 125 100 75 50 25 50 40 30 20 10 0 0 95 10918 20 40 60 80 Tamb − Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Document Number 83010 Rev. 1.9, 31-Aug-04 0 0 100 95 10046 20 40 60 80 100 Tamb − Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 3 TLHE / G / K / P510. VISHAY Vishay Semiconductors 10000 1.6 I V rel - Relative Luminous Intensity t p /T = 0.01 1000 0.02 0.05 0.1 100 1 10 0.2 0.5 1 0.01 0.1 1 tp – Pulse Length ( ms ) 95 10025 Srel - Relative Sensitivity 0° 10° 20° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.4 0.2 0 0.2 0.4 0.6 0.4 0.2 0 Figure 6. Rel. Luminous Intensity vs. Ambient Temperature 2.0 Red 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 Red 10 1 10 100 I F -Forward Current ( mA ) Figure 7. Specific Luminous Intensity vs. Forward Current I Vrel - Relative Luminous Intensity 100 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) 96 11589r Figure 4. Relative Radiant Sensitivity vs. Angular Displacement I F - Forward Current ( mA ) 0.8 0.6 94 8351 10 Red 1 0.1 0.01 1 1.5 2.0 2.5 3 V F - Forward Voltage ( V ) 95 10878r Figure 5. Forward Current vs. Forward Voltage www.vishay.com 4 1.0 0 30° 40° 0.6 1.2 95 10880r Figure 3. Forward Current vs. Pulse Length I F = 10 mA Red 1.4 100 10 I Vrel - Specific Luminous Intensity IF – Forward Current ( mA ) Tamb ≤ 85 °C 1 96 11588r 10 100 I F - Forward Current ( mA ) Figure 8. Relative Luminous Intensity vs. Forward Current Document Number 83010 Rev. 1.9, 31-Aug-04 TLHE / G / K / P510. VISHAY 1.2 1.1 Red IF = 10 mA 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 O – Wavelength ( nm ) 96 12075r 10.00 I Vrel– Relative Luminous Intensity IVrel– Relative Luminous Intensity Vishay Semiconductors I rel – Relative Intensity I V rel - Relative Luminous Intensity 1.0 0.8 0.6 0.4 0.2 0.0 0 10 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) 100 IF – Forward Current ( mA ) Figure 12. Relative Luminous Intensity vs. Forward Current IF = 10 mA 1.2 95 10880y 0.10 0.01 1 1.6 Yellow 1.00 96 11588y Figure 9. Relative Intensity vs. Wavelength 1.4 Yellow 1.2 1.1 Yellow 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 l – Wavelength ( nm ) 95 10881y Figure 13. Relative Intensity vs. Wavelength Figure 10. Rel. Luminous Intensity vs. Ambient Temperature Yellow 1.8 I F - Forward Current ( mA ) I Vrel - Specific Luminous Intensity 1000 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Green 100 t p /T = 0.001 t p = 10 µs 10 1 0.2 0.1 0 1 96 11589y 10 I F - Forward Current ( mA ) Figure 11. Specific Luminous Intensity vs. Forward Current Document Number 83010 Rev. 1.9, 31-Aug-04 0 100 95 10034 2 4 6 8 10 V F - Forward Voltage ( V ) Figure 14. Forward Current vs. Forward Voltage www.vishay.com 5 TLHE / G / K / P510. VISHAY 1.6 1.2 Green IVrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity Vishay Semiconductors 1.2 0.8 0.4 0 I F = 10 mA 0 20 40 60 80 0.8 0.6 0.4 0.2 0 520 100 T amb - Ambient Temperature ( ° C ) 95 10035 Green 1.0 2.0 620 Pure Green I F – Forward Current ( mA ) I v rel - Specific Luminous Intensity 1.6 1.2 0.8 0.4 10 1 20 0.5 50 0.2 100 0.1 200 0.05 500 IF(mA) 0.02 tp/T 10 1 0.1 0 1 2 3 4 5 V F – Forward Voltage ( V ) 95 9988 Figure 19. Forward Current vs. Forward Voltage 2.0 10 I Vrel - Relative Luminous Intensity I v rel - Relative Luminous Intensity 600 100 Green Figure 16. Specific Luminous Intensity vs. Forward Current Green 1 0.1 Pure Green 1.6 1.2 0.8 0.4 0 1 95 10037 10 100 I F - Forward Current ( mA ) Figure 17. Relative Luminous Intensity vs. Forward Current www.vishay.com 6 580 Figure 18. Relative Intensity vs. Wavelength 2.4 95 10263 560 λ - Wavelength ( nm ) Figure 15. Rel. Luminous Intensity vs. Ambient Temperature 0 540 95 10038 95 9991 0 20 40 60 80 100 Tamb − Ambient Temperature ( °C ) Figure 20. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83010 Rev. 1.9, 31-Aug-04 TLHE / G / K / P510. VISHAY Vishay Semiconductors 2.4 I Spec - Specific Luninous Flux Pure Green 2.0 1.6 1.2 0.8 0.4 0 10 95 10261 100 1000 I F - Forward Current ( mA ) Figure 21. Specific Luminous Intensity vs. Forward Current I Vrel - Relative Luminous Intensity 10 Pure Green 1 0.1 0.01 1 10 100 I F - Forward Current ( mA ) 95 9998 Figure 22. Relative Luminous Intensity vs. Forward Current I Vrel - Relative Luminous Intensity 1.2 Pure Green 1.0 0.8 0.6 0.4 0.2 0 500 520 540 560 580 600 λ - Wavelength ( nm ) 95 10325 Figure 23. Relative Intensity vs. Wavelength Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 7 TLHE / G / K / P510. VISHAY Vishay Semiconductors Package Dimensions in mm 9612121 www.vishay.com 8 Document Number 83010 Rev. 1.9, 31-Aug-04 TLHE / G / K / P510. VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83010 Rev. 1.9, 31-Aug-04 www.vishay.com 9