Semiconductor Laser LNC702PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 ø1.0 min. Stable single horizontal mode oscillation LD 110˚±1˚ 0.4±0.1 Features Low threshold current PD 1 Junction plane 3 Reference plane 2.3±0.2 1.27±0.07 0.25 1.0±0.1 Reference slot Reference plane 1.2±0.1 Low drooping Applications Optical data processing devices 3-ø0.45 6.5±0.5 Laser beam printers 2 1 3 1: LD Anode 2: Common Case 3: PD Cathode ø2.0 Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Symbol Ratings Unit PO 5 mW Laser VR 2 V PIN VR (PIN) 30 V Pd (PIN) 60 mW Power dissipation Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +85 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min typ max Unit Threshold current Ith CW 15 25 40 mA Operating current IOP CW PO = 5mW 20 35 50 mA Operating voltage VOP CW PO = 5mW 1.9 2.5 V Oscillation wavelength λL*2 CW PO = 5mW 780 795 810 nm Horizontal direction θ//*1 CW PO = 5mW 8 12 15 deg. Vertical direction θ⊥*1 CW PO = 5mW 20 33 45 deg. 0.3 0.8 1.6 mA 0.1 µA Radiation angle PIN photo current IP CW PO = 5mW, VR (PIN) = 5V Reverse current (DC) IR VR (PIN) = 15V X direction θX CW PO = 5mW –2.0 +2.0 deg. Y direction θY CW PO = 5mW –3.0 +3.0 deg. Optical axis accuracy *1 The radiation angle is indicated as half full angle. inspections are to be performed. On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects. *2 Sampling 1 Semiconductor Laser LNC702PS PO — IOP I—V 6 Far field pattern 200 100 Ta = 25˚C ∆PO 100 3 Relative radiant power I (mA) 4 0 Current Radiant power PO (mW) 5 2 –100 1 0 0 20 40 –200 –4 60 –2 0 2 80 60 20 20 Ith — Ta 10 3 VR (PIN) = 5V PO = 5mW 10 30 50 10 2 10 – 10 70 PIN photo current IP (µA) IOP (mA) Operating current Ith (mA) Threshold current 1 – 10 Ambient temperature Ta (˚C ) 10 30 50 70 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 15V 10 PIN dark current Id (nA) Radiant power PO (mW) 8 6 4 0 – 10 10 30 50 70 Ambient temperature Ta (˚C ) 2 1 10 –1 10 –2 2 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 800 700 600 500 –10 10 30 50 Ambient temperature Ta (˚C ) 10 2 10 40 900 PO = 5mW 10 20 IP — Ta IOP — Ta 10 2 0 Angle θ (deg.) Voltage V (V) Operating current IOP (mA) θ⊥ 40 0 40 4 θ// 70 70