PANASONIC LNC702PS

Semiconductor Laser
LNC702PS
GaAlAs Semiconductor Laser
ø5.6 +0
–0.025
ø4.3±0.1
ø3.55±0.1
Unit : mm
2
ø1.0 min.
Stable single horizontal mode oscillation
LD
110˚±1˚
0.4±0.1
Features
Low threshold current
PD
1
Junction plane
3
Reference plane
2.3±0.2
1.27±0.07
0.25
1.0±0.1
Reference slot
Reference plane
1.2±0.1
Low drooping
Applications
Optical data processing devices
3-ø0.45
6.5±0.5
Laser beam printers
2
1
3
1: LD Anode
2: Common Case
3: PD Cathode
ø2.0
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Symbol
Ratings
Unit
PO
5
mW
Laser
VR
2
V
PIN
VR (PIN)
30
V
Pd (PIN)
60
mW
Power dissipation
Operating ambient temperature
Topr
–10 to +60
˚C
Storage temperature
Tstg
– 40 to +85
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Threshold current
Ith
CW
15
25
40
mA
Operating current
IOP
CW PO = 5mW
20
35
50
mA
Operating voltage
VOP
CW PO = 5mW
1.9
2.5
V
Oscillation wavelength
λL*2
CW PO = 5mW
780
795
810
nm
Horizontal direction
θ//*1
CW PO = 5mW
8
12
15
deg.
Vertical direction
θ⊥*1
CW PO = 5mW
20
33
45
deg.
0.3
0.8
1.6
mA
0.1
µA
Radiation angle
PIN photo current
IP
CW PO = 5mW, VR (PIN) = 5V
Reverse current (DC)
IR
VR (PIN) = 15V
X direction
θX
CW PO = 5mW
–2.0
+2.0
deg.
Y direction
θY
CW PO = 5mW
–3.0
+3.0
deg.
Optical axis
accuracy
*1 The
radiation angle is indicated as half full angle.
inspections are to be performed.
On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.
*2 Sampling
1
Semiconductor Laser
LNC702PS
PO — IOP
I—V
6
Far field pattern
200
100
Ta = 25˚C
∆PO
100
3
Relative radiant power
I (mA)
4
0
Current
Radiant power
PO (mW)
5
2
–100
1
0
0
20
40
–200
–4
60
–2
0
2
80
60
20
20
Ith — Ta
10 3
VR (PIN) = 5V
PO = 5mW
10
30
50
10 2
10
– 10
70
PIN photo current
IP (µA)
IOP (mA)
Operating current
Ith (mA)
Threshold current
1
– 10
Ambient temperature Ta (˚C )
10
30
50
70
Ambient temperature Ta (˚C )
PO — Ta
Id — Ta
VR (PIN) = 15V
10
PIN dark current Id (nA)
Radiant power
PO (mW)
8
6
4
0
– 10
10
30
50
70
Ambient temperature Ta (˚C )
2
1
10 –1
10 –2
2
10 –3
– 10
10
30
50
Ambient temperature Ta (˚C )
800
700
600
500
–10
10
30
50
Ambient temperature Ta (˚C )
10 2
10
40
900
PO = 5mW
10
20
IP — Ta
IOP — Ta
10 2
0
Angle θ (deg.)
Voltage V (V)
Operating current IOP (mA)
θ⊥
40
0
40
4
θ//
70
70